Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and...Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.展开更多
Li-doped p-type ZnO ceramics were prepared by conventional methods according to the chemical formula Zn1-xLixO2 where x=0.5, 1.0, 1.5 and 2.0 mole fraction, respectively. The crystal structures of the prepared samples...Li-doped p-type ZnO ceramics were prepared by conventional methods according to the chemical formula Zn1-xLixO2 where x=0.5, 1.0, 1.5 and 2.0 mole fraction, respectively. The crystal structures of the prepared samples were studied by X-ray diffraction analysis. The dielectric properties （including dielectric constant ε′ and dielectric loss ε″） and dc-electrical conductivity [σ（Ω^-1.cm^-1）] were investigated. The dielectric constant ε′ was sharply decreased at the low frequency range and independent on frequency at high frequency range. Otherwise, the dielectric loss ε″ varied with frequency and showed absorption peak located from 200 Hz to 4 kHz and moved to higher frequency as the concentration of Li＋ doped increased. It was found that dcelectrical conductivity logσ varied from -9 to -5 and the energy gap width were calculated by using Arrhenius equation. The p-type conductivity of Li-doped ZnO may be attributed to the formation of a Lizn-Lii donor complex, which is limited by reducing the amount of Lii.展开更多
Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect...Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly （002） oriented, and have an average transmittance -85 % in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13. 8 Ω· cm with the carrier concentration as high as 1.07 × 10^18 em^-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.展开更多
In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration ...In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.展开更多
We report the preparation of p-type ZnO thin films on （0001） sapphire substrates by a combination of sol-gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperatu...We report the preparation of p-type ZnO thin films on （0001） sapphire substrates by a combination of sol-gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO：Al films annealed at 600℃ have converted to p-type conduction with a hole concentration of 1.6 × 1018 cm^-3, a hole mobility of 3.67cm^2/V· s and a minimum resistivity of 4.80 cm-Ω. Ion-beam induced damage recovery has been investigated by x-ray diffraction （XRD）, photoluminescence （PL） and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600℃. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.展开更多
The geometric structure, band structure and density of states of pure, Ag-doped, N-doped, and N-Ag codoped wurtzite ZnO have been investigated by the first-principles ultra-soft pseudopotential method based on the den...The geometric structure, band structure and density of states of pure, Ag-doped, N-doped, and N-Ag codoped wurtzite ZnO have been investigated by the first-principles ultra-soft pseudopotential method based on the density functional theory. The calculated results show that the carrier concentration is increased in the ZnO crystal codoped by N and Ag, and the codoped structure is stable and is more in favour of the formation of p-type ZnO.展开更多
Using a first-principle method, the electronic structures and the impurity formation energy of ZnO, ZnO （N）, ZnO （N＋B）, and ZnO （2N＋B） have been calculated, based on which the feasibility to obtain p-type ZnO ...Using a first-principle method, the electronic structures and the impurity formation energy of ZnO, ZnO （N）, ZnO （N＋B）, and ZnO （2N＋B） have been calculated, based on which the feasibility to obtain p-type ZnO ＆ discussed. According to the results, when ZnO is single doped by N, the acceptor level is deep, and the formation energy is negative, so the ideal p-type ZnO can not be obtained by this way. On the contrary, when 2N＋B are codoped into ZnO, the acceptor level becomes much lower, and the formation energy is positive, so it is a better way to obtain p-type ZnO.展开更多
P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device appl...P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.展开更多
文摘Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.
文摘Li-doped p-type ZnO ceramics were prepared by conventional methods according to the chemical formula Zn1-xLixO2 where x=0.5, 1.0, 1.5 and 2.0 mole fraction, respectively. The crystal structures of the prepared samples were studied by X-ray diffraction analysis. The dielectric properties （including dielectric constant ε′ and dielectric loss ε″） and dc-electrical conductivity [σ（Ω^-1.cm^-1）] were investigated. The dielectric constant ε′ was sharply decreased at the low frequency range and independent on frequency at high frequency range. Otherwise, the dielectric loss ε″ varied with frequency and showed absorption peak located from 200 Hz to 4 kHz and moved to higher frequency as the concentration of Li＋ doped increased. It was found that dcelectrical conductivity logσ varied from -9 to -5 and the energy gap width were calculated by using Arrhenius equation. The p-type conductivity of Li-doped ZnO may be attributed to the formation of a Lizn-Lii donor complex, which is limited by reducing the amount of Lii.
基金Natural Science Foundation (60576063)Science and Technology Project of Zhejiang province(2008F70015)
文摘Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly （002） oriented, and have an average transmittance -85 % in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13. 8 Ω· cm with the carrier concentration as high as 1.07 × 10^18 em^-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.
基金supported by National Natural Science Foundation of China(Nos.11875090,12075032,11775028,11875088,11974048)Beijing Municipal National Science Foundation(Nos.1192008,KZ202010015022)BIGC(Nos.Ea201901,Ee202001)。
文摘In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.
基金Project supported by the Program for New Century Excellent Talents in University (Grant No NCET-04-0899)Special Foundation for University Subject Construction, Department of Education of Guangdong Province, China (Grant No [2006] 11)
文摘We report the preparation of p-type ZnO thin films on （0001） sapphire substrates by a combination of sol-gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO：Al films annealed at 600℃ have converted to p-type conduction with a hole concentration of 1.6 × 1018 cm^-3, a hole mobility of 3.67cm^2/V· s and a minimum resistivity of 4.80 cm-Ω. Ion-beam induced damage recovery has been investigated by x-ray diffraction （XRD）, photoluminescence （PL） and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600℃. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.
文摘The geometric structure, band structure and density of states of pure, Ag-doped, N-doped, and N-Ag codoped wurtzite ZnO have been investigated by the first-principles ultra-soft pseudopotential method based on the density functional theory. The calculated results show that the carrier concentration is increased in the ZnO crystal codoped by N and Ag, and the codoped structure is stable and is more in favour of the formation of p-type ZnO.
基金Supported by the Foundation for the Excellent Youth Scholars of Anhui Education Office under Grant No.2009SQRZ097ZDthe Foundation of Anhui Province Education Bureau under Grant No.KJ2008B262 the Foundation of Anhui University of Architecture under Grant No.20070601
文摘Using a first-principle method, the electronic structures and the impurity formation energy of ZnO, ZnO （N）, ZnO （N＋B）, and ZnO （2N＋B） have been calculated, based on which the feasibility to obtain p-type ZnO ＆ discussed. According to the results, when ZnO is single doped by N, the acceptor level is deep, and the formation energy is negative, so the ideal p-type ZnO can not be obtained by this way. On the contrary, when 2N＋B are codoped into ZnO, the acceptor level becomes much lower, and the formation energy is positive, so it is a better way to obtain p-type ZnO.
基金Project supported by the National Natural Science Foundation of China(Grant No.11474076)
文摘P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.
