为获得对In0.53Ga0.47As/In P材料在电子束辐照下的光致发光谱变化规律,开展了1 Me V电子束辐照试验,注量为5×1012—9×1014cm-2.样品选取量子阱材料和体材料,在辐照前后,进行了光致发光谱测试,得到了不同结构In0.53Ga0.47As/I...为获得对In0.53Ga0.47As/In P材料在电子束辐照下的光致发光谱变化规律,开展了1 Me V电子束辐照试验,注量为5×1012—9×1014cm-2.样品选取量子阱材料和体材料,在辐照前后,进行了光致发光谱测试,得到了不同结构In0.53Ga0.47As/In P材料在1 Me V电子束辐照下的不同变化规律;对比分析了参数退化的物理机理.结果显示:试验样品的光致发光峰强度随着辐照剂量增大而显著退化.体材料最先出现快速退化,而五层量子阱在注量达到6×1014cm-2时,就已经退化至辐照前的9%.经分析认为原因有:1)电子束进入样品后,与材料晶格发生能量传递,破坏晶格完整性,致使产生的激子数量减少,光致发光强度降低;电子束辐照在材料中引入缺陷,增加了非辐射复合中心密度,导致载流子迁移率降低.2)量子阱的二维限制作用使载流子运动受限,从而能够降低载流子与非辐射复合中心的复合概率;敏感区域截面积相同条件下,体材料比量子阱材料辐射损伤更为严重.3)量子阱的层数越多,则异质结界面数越多,相应的产生的界面缺陷数量也随之增多,辐射损伤越严重.展开更多
To avoid the damage to catalytic system in ATRP by the carboxyl groups in vinyl benzoic acid, a well defined poly( p vinyl benzoic acid) was synthesized via ATRP in the tertiary butyl ester form. The ATRP of t butyl p...To avoid the damage to catalytic system in ATRP by the carboxyl groups in vinyl benzoic acid, a well defined poly( p vinyl benzoic acid) was synthesized via ATRP in the tertiary butyl ester form. The ATRP of t butyl p vinyl benzoate ( t BVB) was studied kinetically. The results showed that t BVB can be polymerized in a controlled way by ATRP. It was found that the polymerization rate of t BVB is much faster than that of St, meaning that the electron withdrawing ester group affects the polymerization obviously. Well defined diblock copolymers of St and t BVB were prepared by using bromo terminated PBVBs as macroinitiators via ATRP. After removal of the t butyl group by hydrolysis, well defined amphiphilic diblock copolymers of styrene and p vinyl benzoic acid (PSt b PBVA) were obtained.展开更多
文摘为获得对In0.53Ga0.47As/In P材料在电子束辐照下的光致发光谱变化规律,开展了1 Me V电子束辐照试验,注量为5×1012—9×1014cm-2.样品选取量子阱材料和体材料,在辐照前后,进行了光致发光谱测试,得到了不同结构In0.53Ga0.47As/In P材料在1 Me V电子束辐照下的不同变化规律;对比分析了参数退化的物理机理.结果显示:试验样品的光致发光峰强度随着辐照剂量增大而显著退化.体材料最先出现快速退化,而五层量子阱在注量达到6×1014cm-2时,就已经退化至辐照前的9%.经分析认为原因有:1)电子束进入样品后,与材料晶格发生能量传递,破坏晶格完整性,致使产生的激子数量减少,光致发光强度降低;电子束辐照在材料中引入缺陷,增加了非辐射复合中心密度,导致载流子迁移率降低.2)量子阱的二维限制作用使载流子运动受限,从而能够降低载流子与非辐射复合中心的复合概率;敏感区域截面积相同条件下,体材料比量子阱材料辐射损伤更为严重.3)量子阱的层数越多,则异质结界面数越多,相应的产生的界面缺陷数量也随之增多,辐射损伤越严重.
文摘To avoid the damage to catalytic system in ATRP by the carboxyl groups in vinyl benzoic acid, a well defined poly( p vinyl benzoic acid) was synthesized via ATRP in the tertiary butyl ester form. The ATRP of t butyl p vinyl benzoate ( t BVB) was studied kinetically. The results showed that t BVB can be polymerized in a controlled way by ATRP. It was found that the polymerization rate of t BVB is much faster than that of St, meaning that the electron withdrawing ester group affects the polymerization obviously. Well defined diblock copolymers of St and t BVB were prepared by using bromo terminated PBVBs as macroinitiators via ATRP. After removal of the t butyl group by hydrolysis, well defined amphiphilic diblock copolymers of styrene and p vinyl benzoic acid (PSt b PBVA) were obtained.
