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4 × 25 GHz uni-traveling carrier photodiode arrays monolithic with In P-based AWG demultiplexers using the selective area growth technique
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作者 叶焓 韩勤 +5 位作者 吕倩倩 潘盼 安俊明 杨晓红 王玉冰 刘荣瑞 《Chinese Optics Letters》 SCIE EI CAS CSCD 2017年第8期90-94,共5页
InP-based photonics integration is becoming a competi- tive candidate for realizing optical modules with enhanced functionality at a reduced cost, especially in optical com- munication systems, since the proposal of w... InP-based photonics integration is becoming a competi- tive candidate for realizing optical modules with enhanced functionality at a reduced cost, especially in optical com- munication systems, since the proposal of wavelength division multiplexing (WDM). In recent years, network traffic has raised demands for high capacity, high speed transmission systems. 展开更多
关键词 AWG In GHz uni-traveling carrier photodiode arrays monolithic with In p-based AWG demultiplexers using the selective area growth techni area
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UPSID和P-base两种语料库简介及运用其进行语音学、音系学研究的方法
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作者 金婧 《海外英语》 2020年第3期216-217,共2页
语料库辅助研究在语言学研究的各个领域都起到了巨大的作用,在语音学音系学领域中同样如此。该文初步介绍了两个在语音学音系学研究中很有用处的两个语料库:UPSID和P-base语料库,并对如何运用这两个语料库在语音学音系学领域进行研究做... 语料库辅助研究在语言学研究的各个领域都起到了巨大的作用,在语音学音系学领域中同样如此。该文初步介绍了两个在语音学音系学研究中很有用处的两个语料库:UPSID和P-base语料库,并对如何运用这两个语料库在语音学音系学领域进行研究做了举例说明,希望读者能够在研究中探索和使用这两个语料库,给研究带来便捷和新颖的方法。 展开更多
关键词 UPSID语料库 p-base语料库 语音学 音系学
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基于CMOS工艺的Si-LED器件设计与测试
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作者 谷晓 牛萍娟 +1 位作者 李晓云 郭维廉 《光机电信息》 2011年第1期15-18,共4页
采用CSMC(华润上华)0.5μmCMOS工艺设计和制备了正向偏置和反向偏置情况下发出两种不同种类光的Si-LED。在室温条件下,对器件进行了初步测试,正向导通电压为0.7V,反向击穿电压为7.5V。器件的结构采用P-base层与n+区交叠,形成Si-pn结LED... 采用CSMC(华润上华)0.5μmCMOS工艺设计和制备了正向偏置和反向偏置情况下发出两种不同种类光的Si-LED。在室温条件下,对器件进行了初步测试,正向导通电压为0.7V,反向击穿电压为7.5V。器件的结构采用P-base层与n+区交叠,形成Si-pn结LED。观察了Si-LED发光显微照片及实际器件的版图,并对器件的发光进行了光谱特性测量。Si-LED在正向偏置时,发出红外光,其发光峰值在1125nm;Si-LED在反向偏置时,发出可见光,其发光峰值在725nm。 展开更多
关键词 Si-LED CMOS工艺 p-base 正向偏置 反向偏置
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A high performance carrier stored trench bipolar transistor with a field-modified P-base region 被引量:2
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作者 齐跃 汪志刚 +1 位作者 陈万军 张波 《Journal of Semiconductors》 EI CAS CSCD 2013年第4期54-59,共6页
A novel high performance carrier stored trench bipolar transistor (CSTBT) with a field- modified P-base region is proposed. Due to the p-pillars inserted into the drift region extending the P-base region to the bott... A novel high performance carrier stored trench bipolar transistor (CSTBT) with a field- modified P-base region is proposed. Due to the p-pillars inserted into the drift region extending the P-base region to the bottom of the trench gate, the electric field around the trench gate is modified, preventing the CSTBT from breakdown in advance caused by a concentration of the electric field at the edge of the trench gate. The p-pillars under the p-well forming the novel P-base region also provide extra paths for hole transportation. Thus, the switching time is also reduced. Simulation results have shown that the blocking voltage (BV) of the novel CSTBT is almost 430 V higher exhibiting avalanche breakdown properties compared with the conventional CSTBT. Moreover, the turn-off time of the novel structure is 0.3μs (17%) shorter than the conventional CSTBT with the same gate length. 展开更多
关键词 field-modified p-base region high breakdown voltage fast switching CSTBT
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The generalization of some trellis properties of linear codes to group codes
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作者 KAN HaiBin LI XueFei SHEN Hong 《Science in China(Series F)》 2009年第5期797-803,共7页
In this paper, we discuss some trellis properties for codes over a finite Abelian group, which are the generalization of the corresponding trellis properties for linear codes over a field. Also, we also investigate di... In this paper, we discuss some trellis properties for codes over a finite Abelian group, which are the generalization of the corresponding trellis properties for linear codes over a field. Also, we also investigate difficulties when we try to generalize a property of a tail-biting trellis for a linear code over a field to a group code. 展开更多
关键词 atomic spans trellises tail-biting trellises minimal span form biproper p-bases
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