NOVEL POLYPYRROLE MICROSTRUCTURES GENERATED BY DIRECT ELECTROCHEMICAL OXIDATION OF PYRROLE ON p-TYPE SILICON SUBSTRATE

Polypyrrole microstructrues with morphology like bowls, cups, goblets and bottles have been electrochemicallygenerated by direct oxidation of pyrrole on p-silicon substrate in the aqueous solution of camphorsulfonic acid. The well-ordered microstructures can stand upright on the working electrode surface and their morphological features can be easilycontrolled by changing the electrochemical polymerization conditions. The growing process of microstructures was studiedby scanning electron microscopy. The microstryctures made of polypyrrole films in doped state were charaterized by Raman and Infrared spectra.

Theoretical study of electromechanical property in a p-type silicon nanoplate for mechanical sensors

Electromechanical property of a p-type single-crystal silicon nanoplate is modelled by a microscopic approach where the hole quantization effect and the spin-orbit coupling effect are taken into account. The visible anisotropic subband structures are calculated by solving self-consistently the stress-dependent 6×6 k.p Schrodinger equation with the Poisson equation. The strong mixing among heavy, light, and split-off holes is quantitatively assessed. The influences of the thickness and the temperature on the piezoresistive coefficient are quantitatively investigated by using the hole concentrations and the effective masses from the complex dispersion structure of the valence band with and without stresses. Our results show that the stress determines the extent to which the band is mixed. The hole quantization effect increases as the thickness decreases, and therefore the valence band is strongly reshaped, resulting in the size-dependent piezoresistivity of the silicon nanoplate. The piezoresistive coefficient increases almost 4 times as the thickness reduces from the bulk to 3 nm, exhibiting a promising application in mechanical sensors.

Fabrication and Characterization of PZN-4.5PT Inorganic Perovskites Nanoparticles Thin Films Deposited on P-Type Silicon Substrate

This work involves an investigation of nanostructures, microelectronic properties and domain engineering of nanoparticles thin layers of Pb(Zn1/ 3Nb2/3)O3-PbTiO3 (PZN-PT) ferroelectric single crystals deposited on nanostructured silicon substrate. In this study, devices made from PZN-4.5PT nanoparticles thin films successfully deposited on silicon substrate have been studied and discussed. SEM images show the formation of local black circles and hexagonal shapes probably due to the nucleation of a new Si-gel component or phase induced by annealing. Micro Xray Fluorescence mapping shows that the high values of Si and B atoms (≅7 and 4 normalized unit respectively) can be explained by the fact that the substrate is p-type silicon. The most interesting result of optical measurements is the very good absorption for all the thin films in UV, Visible and NIR regions with values from 70% to 90% in UV, from 75% to 93% in Visible and NIR. Tauc plots present particularities (rarely encountered behavior) with different segments or absorption changes showing the presence of multiple band gaps coming from the heterogeneity of the thin films (nanowires, gel and nanoparticles). Their values are 1.9 and 2.8 eV for DKRN-Gel, 2.1 and 3.1 eV for DKRN-UD and 2.1 and 3.2 eV for DKRN-D) corresponding respectively to the band gap of nanowires and that of the gel while the last ones correspond to the undoped and doped nanoparticles (3.1 and 3.2 eV respectively).

Novel method of separating macroporous arrays from p-type silicon substrate

This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 1 O0 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed.

Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

The evaluation of the influence of the bending deformation of silicon nanobridges on their electrical properties is crucial for sensing and actuating applications. A combined theory/experimental approach for de- termining the resistivity and the density of interface states of the bending silicon nanobridges is presented. The suspended p-type silicon nanobridge test structures were fabricated from silicon-on-insulator wafers by using a standard CMOS lithography and anisotropic wet etching release process. After that, we measured the resistance of a set of silicon nanobridges versus their length and width under different bias voltages. In conjunction with a theoretical model, we have finally extracted both the interface state density of and resistivity suspended silicon nanobridges under different bending deformations, and found that the resistivity of silicon nanobridges without bending was 9.45 mΩ.cm and the corresponding interface charge density was around 1.7445 × 10^13 cm-2. The bending deformation due to the bias voltage slightly changed the resistivity of the silicon nanobridge, however, it significantly changed the distribution of interface state charges, which strongly depends on the intensity of the stress induced by bending deformation.

Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon

By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors

An improved structure of silicon carbide metal-semiconductor field-effect transistors （MESFET） is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.

Morphology Investigation of Electrolessly Deposited Ag Film on Ag-Activated p-Type Silicon（111） Wafer

A method of electroless silver deposition on silver activated p-type silicon（111） wafer was proposed. The silver seed layer was deposited firstly on the wafer in the solution of 0.005 mol/L AgNO3 ＋0.06 mol/L HE Then the silver film was electrolessly deposited on the seed layer in the electroless bath of AgNO3＋NH3＋acetic acid＋NH2NH2 （pH 10.2）. The morphology of the seed layer and the silver films prepared under the condition of the different bath composition was compared by atomic force microscopy. The reflectance of the silver films with different thickness was characterized by Fourier transform infrared spectrometry. The experimental results indicate that the seed layer possesses excellent catalytic activity toward electroless silver deposition and rotating of the silicon wafer during the electroless silver deposition could lead to formation of the smoother silver film.

基于In Silicon模拟消化的北极虾DPP-Ⅳ抑制肽活性分析

北极虾具有很高的营养价值,在食品领域已引起越来越多的关注。对北极虾蛋白进行In Silicon模拟消化获得寡肽,通过PeptideRanker活性评分及理化性质分析,从中筛选出具有潜在生物活性的寡肽。使用ToxinPred分析和BIOPEP-UWM生物活性预测,发现部分寡肽具有二肽基肽酶-Ⅳ(dipeptidyl peptidase-Ⅳ,DPP-Ⅳ)抑制活性,最终确定WFP(一种三肽,Trp-Phe-Pro)具有最优的DPP-Ⅳ抑制活性肽。分子对接表明,WFP和DPP-Ⅳ能够形成稳定的复合物,其结合能为-6.93 kcal/mol,进一步研究表明,WFP通过与DPP-Ⅳ S1、S2、S3三个活性口袋中的9个氨基酸残基发生相互作用而抑制其活性。本研究为阐释北极虾营养价值及生物活性肽的开发提供了理论依据。

Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries:Overcoming Challenges and Real-World Applications

Silicon(Si)has emerged as a potent anode material for lithium-ion batteries(LIBs),but faces challenges like low electrical conductivity and significant volume changes during lithiation/delithiation,leading to material pulverization and capacity degradation.Recent research on nanostructured Si aims to mitigate volume expansion and enhance electrochemical performance,yet still grapples with issues like pulverization,unstable solid electrolyte interface(SEI)growth,and interparticle resistance.This review delves into innovative strategies for optimizing Si anodes’electrochemical performance via structural engineering,focusing on the synthesis of Si/C composites,engineering multidimensional nanostructures,and applying non-carbonaceous coatings.Forming a stable SEI is vital to prevent electrolyte decomposition and enhance Li^(+)transport,thereby stabilizing the Si anode interface and boosting cycling Coulombic efficiency.We also examine groundbreaking advancements such as self-healing polymers and advanced prelithiation methods to improve initial Coulombic efficiency and combat capacity loss.Our review uniquely provides a detailed examination of these strategies in real-world applications,moving beyond theoretical discussions.It offers a critical analysis of these approaches in terms of performance enhancement,scalability,and commercial feasibility.In conclusion,this review presents a comprehensive view and a forward-looking perspective on designing robust,high-performance Si-based anodes the next generation of LIBs.

Silicone oil as a corneal lubricant to reduce corneal edema and improve visualization during

AIM:To evaluate the efficacy and safety of silicone oil(SO)as a corneal lubricant to improve visualization during vitrectomy.METHODS:Patients who underwent vitreoretinal surgery were divided into two groups.Group 1 was operated on with initial SO(Oxane 5700)as a corneal lubricant.Group 2 was operated on with initial lactated ringer’s solution(LRS)and then replaced with SO as required.Fundus clarity was scored during the surgery.Fluorescein staining was performed to determine the damage to corneal epithelium.RESULTS:Totally 114 eyes of 114 patients were included.Single SO use maintained a clear cornea and provided excellent visualization of surgical image.In group 1,the fundus clarity was grade 3 in 41/45 eyes and grade 2 in 4/45 eyes.In group 2,corneal edema frequently occurred after initial LRS use.The fundus clarity was grade 3 in 19/69 eyes,2 in 37/69 eyes and 1 in 13/69 eyes(P<0.05).SO was applied in 29 eyes of initial LRS use with subsequent corneal edema,which eliminated the corneal edema in 26 eyes.Corneal fluorescein staining score in group 1 was 0 in 28 eyes,1 in 11 eyes and 2 in 6 eyes,and 40,20 and 9,respectively,in group 2(all P>0.05).CONCLUSION:The use of SO as a corneal lubricant is effective and safe for preserving and improving corneal clarity and providing clear surgical field during vitrectomy.

Regulation of 2-acetyl-1-pyrroline and grain quality in early-season indica fragrant rice by nitrogen and silicon fertilization under different plantation methods

Fragrant rice has a high market value,and it is a popular rice type among consumers owing to its pleasant flavor.Plantation methods,nitrogen(N)fertilizers,and silicon(Si)fertilizers can affect the grain yield and fragrance of fragrant rice.However,the core commercial rice production attributes,namely the head rice yield(HRY)and 2-acetyl-1-pyrroline(2-AP)content of fragrant rice,under various nitrogen and silicon(N-Si)fertilization levels and different plantation methods remain unknown.The field experiment in this study was performed in the early seasons of 2018 and 2019 with two popular indica fragrant rice cultivars(Yuxiangyouzhan and Xiangyaxiangzhan).They were grown under six N-Si fertilization treatments(combinations of two levels of Si fertilizer,0 kg Si ha^(−1)(Si0)and 150 kg Si ha^(−1)(Si1),and three levels of N fertilizer,0 kg N ha^(−1)(N0),150 kg N ha^(−1)(N1),and 220 kg N ha^(−1)(N2))and three plantation methods(artificial transplanting(AT),mechanical transplanting(MT),and mechanical direct-seeding(MD)).The results showed that the N-Si fertilization treatments and all the plantation methods significantly affected the HRY and 2-AP content and related parameters of the two different fragrant rice cultivars.Compared with the Si0N0 treatment,the N-Si fertilization treatments resulted in higher HRY and 2-AP contents.The rates of brown rice,milled rice,head rice,and chalky rice of the fragrant rice also improved with the N-Si fertilization treatments.The N-Si fertilization treatments increased the activities of N metabolism enzymes and the accumulation of N and Si in various parts of the fragrant rice,and affected their antioxidant response parameters.The key parameters for the HRY and 2-AP content were assessed by redundancy analysis.Furthermore,the structural equation model revealed that the Si and N accumulation levels indirectly affected the HRY by affecting the N metabolism enzyme activity,N use efficiency,and grain quality of fragrant rice.Moreover,high N and Si accumulation directly promoted the 2-AP content or affected the antioxidant response parameters and indirectly regulated 2-AP synthesis.The interactions of the MT method with the N-Si fertilization treatments varied in the fragrant rice cultivars in terms of the HRY and 2-AP content,whereas the MD method was beneficial to the 2-AP content in both fragrant rice cultivars under the N-Si fertilization treatments.

Multilevel carbon architecture of subnanoscopic silicon for fast‐charging high‐energy‐density lithium‐ion batteries

Silicon(Si)is widely used as a lithium‐ion‐battery anode owing to its high capacity and abundant crustal reserves.However,large volume change upon cycling and poor conductivity of Si cause rapid capacity decay and poor fast‐charging capability limiting its commercial applications.Here,we propose a multilevel carbon architecture with vertical graphene sheets(VGSs)grown on surfaces of subnanoscopically and homogeneously dispersed Si–C composite nanospheres,which are subsequently embedded into a carbon matrix(C/VGSs@Si–C).Subnanoscopic C in the Si–C nanospheres,VGSs,and carbon matrix form a three‐dimensional conductive and robust network,which significantly improves the conductivity and suppresses the volume expansion of Si,thereby boosting charge transport and improving electrode stability.The VGSs with vast exposed edges considerably increase the contact area with the carbon matrix and supply directional transport channels through the entire material,which boosts charge transport.The carbon matrix encapsulates VGSs@Si–C to decrease the specific surface area and increase tap density,thus yielding high first Coulombic efficiency and electrode compaction density.Consequently,C/VGSs@Si–C delivers excellent Li‐ion storage performances under industrial electrode conditions.In particular,the full cells show high energy densities of 603.5 Wh kg^(−1)and 1685.5 Wh L^(−1)at 0.1 C and maintain 80.7%of the energy density at 3 C.

Ultrafast dynamics of femtosecond laser-induced high spatial frequency periodic structures on silicon surfaces

Femtosecond laser-induced periodic surface structures(LIPSS)have been extensively studied over the past few decades.In particular,the period and groove width of high-spatial-frequency LIPSS(HSFL)is much smaller than the diffraction limit,making it a useful method for efficient nanomanufacturing.However,compared with the low-spatial-frequency LIPSS(LSFL),the structure size of the HSFL is smaller,and it is more easily submerged.Therefore,the formation mechanism of HSFL is complex and has always been a research hotspot in this field.In this study,regular LSFL with a period of 760 nm was fabricated in advance on a silicon surface with two-beam interference using an 800 nm,50 fs femtosecond laser.The ultrafast dynamics of HSFL formation on the silicon surface of prefabricated LSFL under single femtosecond laser pulse irradiation were observed and analyzed for the first time using collinear pump-probe imaging method.In general,the evolution of the surface structure undergoes five sequential stages:the LSFL begins to split,becomes uniform HSFL,degenerates into an irregular LSFL,undergoes secondary splitting into a weakly uniform HSFL,and evolves into an irregular LSFL or is submerged.The results indicate that the local enhancement of the submerged nanocavity,or the nanoplasma,in the prefabricated LSFL ridge led to the splitting of the LSFL,and the thermodynamic effect drove the homogenization of the splitting LSFL,which evolved into HSFL.

Investigation on p-type doping of PBn unipolar barrier InAsSb photodetectors

The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.

Degradation analysis and doping modification optimization for high-voltage P-type layered cathode in sodium-ion batteries

Advancing high-voltage stability of layered sodium-ion oxides represents a pivotal avenue for their progress in energy storage applications.Despite this,a comprehensive understanding of the mechanisms underpinning their structural deterioration at elevated voltages remains insufficiently explored.In this study,we unveil a layer delamination phenomenon of Na_(0.67)Ni_(0.3)Mn_(0.7)O_(2)(NNM)within the 2.0-4.3 V voltage,attributed to considerable volumetric fluctuations along the c-axis and lattice oxygen reactions induced by the simultaneous Ni^(3+)/Ni^(4+)and anion redox reactions.By introducing Mg doping to diminished Ni-O antibonding,the anion oxidation-reduction reactions are effectively mitigated,and the structural integrity of the P2 phase remains firmly intact,safeguarding active sites and precluding the formation of novel interfaces.The Na_(0.67)Mg_(0.05)Ni_(0.25)Mn_(0.7)O_(2)(NMNM-5)exhibits a specific capacity of100.7 mA h g^(-1),signifying an 83%improvement compared to the NNM material within the voltage of2.0-4.3 V.This investigation underscores the intricate interplay between high-voltage stability and structural degradation mechanisms in layered sodium-ion oxides.

Effect of Silicon Amendment on Growth and Nitrogen Status of Common Landscaping Plants

Agriculture and natural vegetations in South Florida face with significant environmental threats such as heat and saltwater intrusion. This study aimed to investigate how silicon application could improve growth parameters and plant health of landscaping plants under extreme temperatures, influenced by global climate changes. Cocoplum (Chrysobalanus icaco), cabbage palm (Sabal palmetto), satinleaf (Chrysophyllum oliviforme), and wild coffee (Psychotria nervosa) plants received an initial slow-release fertilizer of 15 g/pot with an 8N-3P-9K composition. Silicon was applied as a 1% silicic acid solution, with concentrations ranging from 0 g/pot to 6 g/pot of 7.5 L. Evaluations were carried out every 30 days, continuing until 180 days after the treatment was completed. Phenotypic traits, including leaf count and plant height, were assessed alongside measurements from handheld optical non-destructive sensors. These measurements included the normalized difference vegetation index (NDVI), SPAD-502, and atLEAF chlorophyll meters. Application of 4 g/pot and 6 g/pot of silicon significantly improved NDVI values (0.78). Conversely, cocoplum plants exhibited greater plant height (79.6) at 0 g/pot silicon compared to other treatments. In wild coffee samplings, the control group showed the highest plant height and SPAD readings (93.49) compared to other treatments. Interestingly, the control treatment also demonstrated a superior atLEAF value as compared to other treatments, while the tallest samplings were observed with 6 g/pot of silicon (62.82) in cabbage palm plants. The findings indicate that silicon application positively influenced plant growth, particularly evident in cabbage palms. However, cocoplum and wild coffee exhibited a negative correlation between plant height and silicon concentrations.

Identification of P-type plasma membrane H^(+)-ATPases in common wheat and characterization of TaHA7 associated with seed dormancy and germination

The P-type plasma membrane(PM)H^(+)-ATPases(HAs)are crucial for plant development,growth,and defense.The HAs have been thoroughly characterized in many different plants.However,despite their importance,the functions of HAs in germination and seed dormancy(SD)have not been validated in wheat.Here,we identified 28 TaHA genes(TaHA1-28)in common wheat,which were divided into five subfamilies.An examination of gene expression in strong-and weak-SD wheat varieties led to the discovery of six candidate genes(TaHA7/-12/-14/-16/-18/-20).Based on a single nucleotide polymorphism(SNP)mutation(C/T)in the TaHA7 coding region,a CAPS marker(HA7)was developed and validated in 168 wheat varieties and 171 Chinese mini-core collections that exhibit diverse germination and SD phenotypes.We further verified the roles of the two allelic variations of TaHA7 in germination and SD using wheat mutants mutagenized with ethyl methane sulphonate(EMS)in‘Jimai 22’and‘Jing 411’backgrounds,and in transgenic Arabidopsis lines.TaHA7 appears to regulate germination and SD by mediating gibberellic acid(GA)and abscisic acid(ABA)signaling,metabolism,and biosynthesis.The results presented here will enable future research regarding the TaHAs in wheat.

‘Jelly to Joule’:Direct laser writing of sustainable jellyfish-based ‘graphenic silicon’ anodes for environmentally remediating high-performance lithium-ion batteries

The ramifications of global climate change and resource scarcities have made it imperative to re-examine the definition of sustainable energy-storage systems.It is crucial to recognize that not all renewable resources are inherently sustainable,and their full impact on the environment must be assessed.With the proliferation of invasive jellyfish species wreaking havoc on marine ecosystems and economies worldwide,utilizing overabundant jellyfish as a carbon source presents an opportunity to create energy-storage systems that are both financially beneficial and environmentally remediating.Accordingly,a comprehensive approach to sustainability also requires eco-friendly solutions throughout the entire lifecycle,from material sourcing to battery production,without compromising highperformance requirements.Currently,most electrode syntheses for lithium-ion batteries(LIBs) employed are energy-intensive,multiple-steps,complex,and additive-heavy.In response,this work pioneers the straightforward use of low-energy laser irradiation of a jellyfish biomass/silicon nanoparticle blend to encapsulate the silicon nanoparticles in-situ within the as-forming conductive carbonized matrix,creating sustainable and additive-free composite anodes.The self-standing anode is directly synthesized under ambient conditions and requires no post-processing.Here,a laser-synthesized conductive threedimensional porous carbon/silicon composite anode from raw jellyfish biomass for LIBs is presented,displaying outstanding cyclic stability(>1000 cycles),excellent capacity retention(>50% retention after1000 cycles),exceptional coulombic efficiency(>99%),superb reversible gravimetric capacity(>2000 mAh/g),and high rate performance capability(>1.6 A/g),paving a new path to future sustainable energy production.