Recently, the inverse connected p-median problem on block graphs G(V,E,w) under various cost functions, say rectilinear norm, Chebyshev norm, and bottleneck Hamming distance. Their contributions include finding a nece...Recently, the inverse connected p-median problem on block graphs G(V,E,w) under various cost functions, say rectilinear norm, Chebyshev norm, and bottleneck Hamming distance. Their contributions include finding a necessary and sufficient condition for the connected p-median problem on block graphs, developing algorithms and showing that these problems can be solved in O(n log n) time, where n is the number of vertices in the underlying block graph. Using similar technique, we show that some results are incorrect by a counter-example. Then we redefine some notations, reprove Theorem 1 and redescribe Theorem 2, Theorem 3 and Theorem 4.展开更多
多输入多输出(Multiple-Input Multiple-Output,MIMO)雷达在阵元故障时虚拟阵列输出数据矩阵会出现大量的整行数据丢失,由于阵列接收数据矩阵的不完整而导致对波达方向(Direction of Arrival,DOA)的估计性能恶化。大多数低秩矩阵填充算...多输入多输出(Multiple-Input Multiple-Output,MIMO)雷达在阵元故障时虚拟阵列输出数据矩阵会出现大量的整行数据丢失,由于阵列接收数据矩阵的不完整而导致对波达方向(Direction of Arrival,DOA)的估计性能恶化。大多数低秩矩阵填充算法要求缺失数据随机分布于不完整的矩阵中,无法适用于整行缺失数据的恢复问题。为此,提出了一种基于低秩块Hankel矩阵正则化的阵元故障MIMO雷达DOA估计方法。首先,通过奇异值分解(Singular Value Decomposition,SVD)降低虚拟阵列输出矩阵的维度,以减少计算复杂度。然后,对降维数据矩阵建立基于块Hankel矩阵正则化的低秩矩阵填充模型,在该模型中将MIMO雷达降维数据矩阵排列成块Hankel矩阵并施加Schatten-p范数作为正则项。最后,结合交替方向乘子法(Alternate Direction Multiplier Method,ADMM)求解该模型,获得完整的MIMO雷达降维数据矩阵。仿真结果表明,所提方法能够有效恢复降维数据矩阵中的整行数据缺失,具有较高的DOA估计精度和实时性,在阵元故障率低于50.0%时DOA估计精度优于现有方法。展开更多
Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-A1GaN hole blocking layer (HBL), and an n-A1GaN HBL with gradual A1 composition are investigated numerically,...Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-A1GaN hole blocking layer (HBL), and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency (IQE). The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.展开更多
The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energ...The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.展开更多
文摘Recently, the inverse connected p-median problem on block graphs G(V,E,w) under various cost functions, say rectilinear norm, Chebyshev norm, and bottleneck Hamming distance. Their contributions include finding a necessary and sufficient condition for the connected p-median problem on block graphs, developing algorithms and showing that these problems can be solved in O(n log n) time, where n is the number of vertices in the underlying block graph. Using similar technique, we show that some results are incorrect by a counter-example. Then we redefine some notations, reprove Theorem 1 and redescribe Theorem 2, Theorem 3 and Theorem 4.
文摘多输入多输出(Multiple-Input Multiple-Output,MIMO)雷达在阵元故障时虚拟阵列输出数据矩阵会出现大量的整行数据丢失,由于阵列接收数据矩阵的不完整而导致对波达方向(Direction of Arrival,DOA)的估计性能恶化。大多数低秩矩阵填充算法要求缺失数据随机分布于不完整的矩阵中,无法适用于整行缺失数据的恢复问题。为此,提出了一种基于低秩块Hankel矩阵正则化的阵元故障MIMO雷达DOA估计方法。首先,通过奇异值分解(Singular Value Decomposition,SVD)降低虚拟阵列输出矩阵的维度,以减少计算复杂度。然后,对降维数据矩阵建立基于块Hankel矩阵正则化的低秩矩阵填充模型,在该模型中将MIMO雷达降维数据矩阵排列成块Hankel矩阵并施加Schatten-p范数作为正则项。最后,结合交替方向乘子法(Alternate Direction Multiplier Method,ADMM)求解该模型,获得完整的MIMO雷达降维数据矩阵。仿真结果表明,所提方法能够有效恢复降维数据矩阵中的整行数据缺失,具有较高的DOA估计精度和实时性,在阵元故障率低于50.0%时DOA估计精度优于现有方法。
基金supported by the National Natural Science Foundation of China(Grant No.61176043)the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province,China(Grant Nos.2010A081002005,2011A081301003,and 2012A080304016)the Youth Foundation of South China Normal University(Grant No.2012KJ018)
文摘Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-A1GaN hole blocking layer (HBL), and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency (IQE). The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.
基金supported by the Project of Combination of Production and Research Guided by Ministry in 2009,China (Grant No. 2009B090300338)the Doctorate Foundation of the State Education Ministry of China (Grant No. 350163)the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong,China (Grant No. 2007A010501008)
文摘The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.