The performance of P3HT：PCBM solar cells was improved by anode modification using spin-coated Tb（aca）3phen ultrathin films. The modification of the Tb（aca）3phen ultrathin film between the indium tin oxide （ITO）...The performance of P3HT：PCBM solar cells was improved by anode modification using spin-coated Tb（aca）3phen ultrathin films. The modification of the Tb（aca）3phen ultrathin film between the indium tin oxide （ITO） anode and the PEDOT：PSS layer resulted in a maximum power conversion efficiency （PCE） of 2.99% compared to 2.66% for the reference device, which was due to the increase in the short-circuit current density （Jsc）. The PCE improvement could be attributed to the short-wavelength energy utilization and the optimized morphology of the active layers. Tb（aca）3phen with its strong down-conversion luminescence properties is suitable for the P3HT：PCBM blend active layer, and the absorption region of the ternary blend films is extended into the near ultraviolet region. Furthermore, the crystallization and the surface morphol- ogy of P3HT：PCBM films were improved with the Tb（aca）3phen ultrathin film. The ultraviolent-visible absorption spectra, atomic force microscope （AFM）, and X-ray diffraction （XRD） of the films were investigated. Both anode modification and short-wavelength energy utilization using Tb（aca）3phen in P3HT：PCBM solar cells led to about a 12% PCE increase.展开更多
In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （A...In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.展开更多
[6,6]-phenyl C61-butyric acid methyl ester: poly (3-hexylthiophene) bulk heterojunction solar cells doped with germanium phthalocyanine or germanium naphthalocyanine were fabricated and characterized. Photovoltaic pro...[6,6]-phenyl C61-butyric acid methyl ester: poly (3-hexylthiophene) bulk heterojunction solar cells doped with germanium phthalocyanine or germanium naphthalocyanine were fabricated and characterized. Photovoltaic properties of the solar cells with inverted structures were investigated by optical absorption, current density-voltage characteristic and incident photon to current conversion efficiency. These germanium phthalocyanine and germanium naphthalocyanine blended as the third component absorbed light with wavelength longer than 700 nm. Morphology of solar cells was investigated by atomic force microscopy, and energy levels of the solar cells were discussed for power conversion efficiency.展开更多
基金supported by the National Basic Research Program of China(Grant Nos.2011CB932700 and 2011CB932703)the National Outstanding Youth Science Foundation of China(Grant No.60825407)+2 种基金the National Natural Science Foundation of China(Grant Nos.61335006,61378073,60877025,61077044,and 91123025)the Beijing Natural Science Foundation,China(Grant No.4132031)the Fundamental Research Funds for the Central Universities,China(Grant No.2012YJS116)
文摘The performance of P3HT：PCBM solar cells was improved by anode modification using spin-coated Tb（aca）3phen ultrathin films. The modification of the Tb（aca）3phen ultrathin film between the indium tin oxide （ITO） anode and the PEDOT：PSS layer resulted in a maximum power conversion efficiency （PCE） of 2.99% compared to 2.66% for the reference device, which was due to the increase in the short-circuit current density （Jsc）. The PCE improvement could be attributed to the short-wavelength energy utilization and the optimized morphology of the active layers. Tb（aca）3phen with its strong down-conversion luminescence properties is suitable for the P3HT：PCBM blend active layer, and the absorption region of the ternary blend films is extended into the near ultraviolet region. Furthermore, the crystallization and the surface morphol- ogy of P3HT：PCBM films were improved with the Tb（aca）3phen ultrathin film. The ultraviolent-visible absorption spectra, atomic force microscope （AFM）, and X-ray diffraction （XRD） of the films were investigated. Both anode modification and short-wavelength energy utilization using Tb（aca）3phen in P3HT：PCBM solar cells led to about a 12% PCE increase.
文摘In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.
文摘[6,6]-phenyl C61-butyric acid methyl ester: poly (3-hexylthiophene) bulk heterojunction solar cells doped with germanium phthalocyanine or germanium naphthalocyanine were fabricated and characterized. Photovoltaic properties of the solar cells with inverted structures were investigated by optical absorption, current density-voltage characteristic and incident photon to current conversion efficiency. These germanium phthalocyanine and germanium naphthalocyanine blended as the third component absorbed light with wavelength longer than 700 nm. Morphology of solar cells was investigated by atomic force microscopy, and energy levels of the solar cells were discussed for power conversion efficiency.
