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Preparation and Characterization of TaN ALD Precursors 被引量:1
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作者 Tracy Yund Cynthia A. Hoover 《半导体技术》 CAS CSCD 北大核心 2004年第7期82-85,91,共5页
High purity organic-tantalum precursors forthin film ALD TaN were synthesized andcharacterized. Vapor pressure and thermal stabilityof these precursors were studied. From the vaporpressure analysis, it was found that ... High purity organic-tantalum precursors forthin film ALD TaN were synthesized andcharacterized. Vapor pressure and thermal stabilityof these precursors were studied. From the vaporpressure analysis, it was found that TBTEMT has ahigher vapor pressure than any other published liq-uid TaN precursor, including TBTDET,TAITMATA,and IPTDET. Thermal stability of the alkyl groupson the precursors was investigated using a 1H NMRtechnique. The results indicated that the tert-butylimino group is the most stable group onTBTDET and TBTEMT as compared to thedialkylamido groups. Thermal stability of TaN pre-cursors decreased in the following order: TBTDET> PDMAT > TBTEMT. In conclusion, precursor va-por pressure and thermal stability were tuned bymaking slight variations in the ligand sphere aroundthe metal center. 展开更多
关键词 热稳定性 汽压分析 TBTDET pdmat TBTEMT TAN ALD
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