TiO 2 nanoparticle film catalysts with different thicknesses were prepared by plasma enhanced chemical vapor deposition(PECVD) method and the surfaces were subsequently treated by TiCl 4 or O 2 plasma. Two kinds of Ti...TiO 2 nanoparticle film catalysts with different thicknesses were prepared by plasma enhanced chemical vapor deposition(PECVD) method and the surfaces were subsequently treated by TiCl 4 or O 2 plasma. Two kinds of TiO 2 films with different surface properties were obtained. Their surface microstructures and energy levels of surface states were tested by AFM, XRD, SPS. The photocatalytic activities of the catalysts were determined via photodegradation experiments of phenol. The results demonstrated that photocatalytic activities of samples whose surface was treated by O 2 plasma were greater than those treated by TiCl 4 plasma. Moreover, photodegradation ratio of phenol during the first hour catalyzed by 0.17 μm thickness TiO 2 nanoparticle film was greater than other samples. Especially, the difference of photocatalytic activities of TiO 2 nanoparticle films treated by TiCl 4 or O 2 plasma was respectively explained by energy band theory.展开更多
A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various si-lane concentrations. The influence of silane concentration o...A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various si-lane concentrations. The influence of silane concentration on structural and elec-trical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time,optical emis-sion spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties,Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism,why both OES and Raman can be used to diagnose the phase transition,was analyzed theoretically.展开更多
文摘TiO 2 nanoparticle film catalysts with different thicknesses were prepared by plasma enhanced chemical vapor deposition(PECVD) method and the surfaces were subsequently treated by TiCl 4 or O 2 plasma. Two kinds of TiO 2 films with different surface properties were obtained. Their surface microstructures and energy levels of surface states were tested by AFM, XRD, SPS. The photocatalytic activities of the catalysts were determined via photodegradation experiments of phenol. The results demonstrated that photocatalytic activities of samples whose surface was treated by O 2 plasma were greater than those treated by TiCl 4 plasma. Moreover, photodegradation ratio of phenol during the first hour catalyzed by 0.17 μm thickness TiO 2 nanoparticle film was greater than other samples. Especially, the difference of photocatalytic activities of TiO 2 nanoparticle films treated by TiCl 4 or O 2 plasma was respectively explained by energy band theory.
基金Supported by the National Basic Research Program of China (Grant Nos. 2006CB202602 and 2006CB202603)
文摘A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various si-lane concentrations. The influence of silane concentration on structural and elec-trical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time,optical emis-sion spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties,Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism,why both OES and Raman can be used to diagnose the phase transition,was analyzed theoretically.