虚拟仿真实验教学已成为微电子工艺实训实践能力培养的重要手段,弥补和完善了传统教学方式的缺点和不足。文章介绍了PECVD(Plasma Enhanced Chemical Vapor Deposition)薄膜沉积工艺在聚光多结光伏电池芯片制备中应用的虚拟仿真实验项目...虚拟仿真实验教学已成为微电子工艺实训实践能力培养的重要手段,弥补和完善了传统教学方式的缺点和不足。文章介绍了PECVD(Plasma Enhanced Chemical Vapor Deposition)薄膜沉积工艺在聚光多结光伏电池芯片制备中应用的虚拟仿真实验项目,将实验教学融合在多结光伏电池芯片制备应用场景下,以典型的PECVD法沉积电池增透膜为例,设计实验项目。采用虚实结合的实验教学方法,解决了真实实验教学中存在的高安全风险、设备昂贵、材料成本高等问题。通过共享服务平台“ilab-x实验空间”对外免费开放,学生参与PECVD薄膜沉积全工艺流程,对培养和提高学生的创新及实践能力具有很好的作用。展开更多
The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chem...The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chemical vapor deposition(PECVD) at various substrate temperatures.Raman spectroscopy and Fourier transform infrared(FTIR) spectroscopy were used to evaluate the structural evolution,meanwhile,electronic-spin resonance(ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films.The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.展开更多
文摘虚拟仿真实验教学已成为微电子工艺实训实践能力培养的重要手段,弥补和完善了传统教学方式的缺点和不足。文章介绍了PECVD(Plasma Enhanced Chemical Vapor Deposition)薄膜沉积工艺在聚光多结光伏电池芯片制备中应用的虚拟仿真实验项目,将实验教学融合在多结光伏电池芯片制备应用场景下,以典型的PECVD法沉积电池增透膜为例,设计实验项目。采用虚实结合的实验教学方法,解决了真实实验教学中存在的高安全风险、设备昂贵、材料成本高等问题。通过共享服务平台“ilab-x实验空间”对外免费开放,学生参与PECVD薄膜沉积全工艺流程,对培养和提高学生的创新及实践能力具有很好的作用。
基金supported by the Fundamental Research Funds for the Central Universities
文摘The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chemical vapor deposition(PECVD) at various substrate temperatures.Raman spectroscopy and Fourier transform infrared(FTIR) spectroscopy were used to evaluate the structural evolution,meanwhile,electronic-spin resonance(ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films.The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.
