Finger capacitance of a terahertz photomixer in low-temperature-grown GaAs using the finite element method

Interdigitated finger capacitance of a continuous-wave terahertz photomixer is calculated using the finite element method.For the frequently used electrode width（0.2 μm） and gap width（1.8 μm）,the finger capacitance increases quasi-quadratically with the number of electrodes increasing.The quasi-quadratic dependence can be explained by a sequence of lumped capacitors connected in parallel.For a photomixer composed of 10 electrodes and 9 photoconductive gaps,the finger capacitance increases as the gap width increases at a small electrode width,and follows the reverse trend at a large electrode width.For a constant electrode width,the finger capacitance first decreases and then slightly increases as the gap broadens until the smallest finger capacitance is formed.We also investigate the finger capacitances at different electrode and gap configurations with the 8 μm × 8 μm photomixer commonly used in previous studies.These calculations lead to a better understanding of the finger capacitance affected by the finger parameters,and should lead to terahertz photomixer optimization.

Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers

We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.

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Optically pumped terahertz sources

High-power terahertz(THz) generation in the frequency range of 0.1-10 THz has been a fast-developing research area ever since the beginning of the THz boom two decades ago, enabling new technological breakthroughs in spectroscopy, communication, imaging,etc. By using optical(laser) pumping methods with near-or mid-infrared(IR) lasers, flexible and practical THz sources covering the whole THz range can be realized to overcome the shortage of electronic THz sources and now they are playing important roles in THz science and technology. This paper overviews various optically pumped THz sources, including femtosecond laser based ultrafast broadband THz generation, monochromatic widely tunable THz generation, single-mode on-chip THz source from photomixing, and the traditional powerful THz gas lasers. Full descriptions from basic principles to the latest progress are presented and their advantages and disadvantages are discussed as well. It is expected that this review gives a comprehensive reference to researchers in this area and additionally helps newcomers to quickly gain understanding of optically pumped THz sources.

Nonlinear optical response of graphene in terahertz and near-infrared frequency regime

In this review, we discuss our recent theoretical work on the nonlinear optical response of graphene and its sister structure in terahertz （THz） and near-infrared frequency regime. Due to Dirac-like linear energymomentum dispersion, the third-order nonlinear current in graphene is much stronger than that in conventional semiconductors. The nonlinear current grows rapidly with increasing temperature and decreasing frequency. The third-order nonlinear current can be as strong as the linear current under moderate electric field strength of 104 V/cm. In bilayer graphene （BLG） with low energy trigonal warping effect, not only the optical response is strongly nonlinear, the optical nonlinearity is well-preserved at elevated temperature. In the presence ofa bandgap （such as semihydrogenated graphene （SHG））, there exists two well separated linear response and nonlinear response peaks. This suggests that SHG can have a unique potential as a two-color nonlinear material in the THz frequency regime where the relative intensity of the two colors can be tuned with the electric field. In a graphene superlattice structure of Kronig-Penney type periodic potential, the Dirac cone is elliptically deformed. We found that not only the optical nonlinearity is preserved in such a system, the total optical response is further enhanced by a factor proportional to the band anisotropy. This suggests that graphene superlattice is another potential candidate in THz device application.