The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS）...The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.展开更多
Ceramic tapes, containing Al2O3-25 wt pct TiB2(B) and Al2O3-25 wt pct nano-TiC (c), have been obtained by tape casting process. Numerous tapes (about 60～80 tapes) were prepared by stacking in turn the composition (B)...Ceramic tapes, containing Al2O3-25 wt pct TiB2(B) and Al2O3-25 wt pct nano-TiC (c), have been obtained by tape casting process. Numerous tapes (about 60～80 tapes) were prepared by stacking in turn the composition (B) and (C), laminating under 10 MPa pressure, eliminating the solvent and burning out the polymer additives. The final green bodies were hot pressed at 1750℃ and 30 MPa. The composite has a bending strength of 568 MPa and a fracture toughness of 5.8 M Pa·m1/2. SEM analysis exhibits that Al2O3 particle growth was inhibited by TiC particles in C. but TiB2 particles could not hinder Al2O3 growth in B. The curves of GTA indicates that all organic additives could be removed completely above 600℃展开更多
以纳米ZrO 、微米Al O 为原料,采用无压烧结方式制备了ZTA 复相陶瓷。结果表明:nano-ZrO 的 2 2 3 2加入有利于制备细晶ZTA 复相陶瓷。此外,nano-ZrO 的加入对 Al O 陶瓷的显微结构也产生影响,ZrO ...以纳米ZrO 、微米Al O 为原料,采用无压烧结方式制备了ZTA 复相陶瓷。结果表明:nano-ZrO 的 2 2 3 2加入有利于制备细晶ZTA 复相陶瓷。此外,nano-ZrO 的加入对 Al O 陶瓷的显微结构也产生影响,ZrO 颗粒以 2 2 3 2“晶内型”和晶界型两种形式存在。合理的配方组成及制备工艺有利于 Z r O 以四方亚稳相存在。Z r O 含量为 2 23 0 w t % 时,其四方相含量可达 6 9 %,有利于应力诱导相变增韧,该 Z T A 复相陶瓷的抗弯强度、断裂韧性分别达到 604MPa、6.87MPa·m1/2。展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 51337002,51077028,51502063 and 51307046the Foundation of Harbin Science and Technology Bureau of Heilongjiang Province under Grant No RC2014QN017034
文摘The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.
文摘Ceramic tapes, containing Al2O3-25 wt pct TiB2(B) and Al2O3-25 wt pct nano-TiC (c), have been obtained by tape casting process. Numerous tapes (about 60～80 tapes) were prepared by stacking in turn the composition (B) and (C), laminating under 10 MPa pressure, eliminating the solvent and burning out the polymer additives. The final green bodies were hot pressed at 1750℃ and 30 MPa. The composite has a bending strength of 568 MPa and a fracture toughness of 5.8 M Pa·m1/2. SEM analysis exhibits that Al2O3 particle growth was inhibited by TiC particles in C. but TiB2 particles could not hinder Al2O3 growth in B. The curves of GTA indicates that all organic additives could be removed completely above 600℃
文摘以纳米ZrO 、微米Al O 为原料,采用无压烧结方式制备了ZTA 复相陶瓷。结果表明:nano-ZrO 的 2 2 3 2加入有利于制备细晶ZTA 复相陶瓷。此外,nano-ZrO 的加入对 Al O 陶瓷的显微结构也产生影响,ZrO 颗粒以 2 2 3 2“晶内型”和晶界型两种形式存在。合理的配方组成及制备工艺有利于 Z r O 以四方亚稳相存在。Z r O 含量为 2 23 0 w t % 时,其四方相含量可达 6 9 %,有利于应力诱导相变增韧,该 Z T A 复相陶瓷的抗弯强度、断裂韧性分别达到 604MPa、6.87MPa·m1/2。
