GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches

GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented. The impact of diode physical characteristics and electrical parameters on switch performance is discussed. A new structure for GaAs PIN diodes is proposed and the fabrication process is described. GaAs PIN diodes with an on-state resistance of 〈2. 2Ω and off-state capacitance -〈20fF in the range of 100MHz to 12.1GHz are obtained.

A Novel Equivalent Circuit Model of GaAs PIN Diodes

A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts： the p^＋ n^- junction, the i-layer, and the n^- n^＋ junction, which are modeled separately. The entire model is then formed by combining the three sub-models. In this way, the model＇s accuracy is greatly enhanced. Furthermore, the corresponding parameter extraction method is easy, requiring no rigorous experiment or measurement. To validate this newly proposed model,fifteen groups of diodes are fabricated. Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.

A C-Band Monolithic GaAs PIN Diode SPST Switch

A monolithic single pole single throw （SPST） switch is developed with GaAs PIN diode technology from IMECAS. A novel small signal model of a GaAs PIN diode is developed for circuit simulation. The switch features an on-state insertion loss of less than 1.6dB and a return loss of greater than 10dB while maintaining an off-state isolation of greater than 23dB from 5.5 to 7. 5GHz. The measured 1dB power gain compression point is about 20dBm.

Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode （MPS） is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.

Electron Temperature Measurement Using PIN Diodes as Detectors to Record the X-ray Pulses from a Low-Energy Mather-Type Plasma Focus

In the experiment to determine the plasma electron temperature, a modifiedmultichannel PIN diodes assembly is used as detectors to record the X-ray pulses from a low-energyMather-type plasma focus device energized by a 32μF, 15 kV (3.6kJ) single capacitor, with deuteriumas a filling gas. The ratio of the integrated bremsstrahlung emission transmitting through foils tothe total incident flux as a function of foil thickness at various temperatures is obtained forfoil absorbers of material. Using 3 μm, 6 μm, 9 μm,12 μm,15 μm and 18 μm thick aluminiumabsorbers, the transmitted X-ray flux is detected. By comparing the experimental and theoreticalcurves through a computer program, the plasma electron temperature is determined. Results show thatthe deuterium focus plasma electron temperature is about 800 eV.

A betavoltaic microbattery based on PIN diodes

A betavohaic Microbattery was studied. The diode was composed of a PIN structure with an active area of 10 mm × 10 mm to collect the charge from a 10mCi Ni-63 source. An open circuit voltage of 0. 16 V and a short circuit current density of 67.6 nA/cm2 were measured. An efficiency （η） of 1.44% was obtained. The performance of device was limited by high series resistance, edge recombination and attenuation of electron in PIN diodes. It is expected to be improved by optimizing the design and using more suitable radioisotope.

A review of the etched terminal structure of a 4H-SiC PiN diode

The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension(JTE)structures for power devices.However,achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon.Many previously reported studies adopted many new structures to solve this problem.Additionally,the JTE structure is strongly sensitive to the ion implantation dose.Thus,GA-JTE,double-zone etched JTE structures,and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage.They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes.This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad.Presently,the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes.

Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes

The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied.We fabricated the PIN rectifier diodes with different initial oxygen concentrations,and analyzed the electrical properties,anisotropic preferred etching by means of optical microscopy,Fourier transform infrared spectroscopy and transmission electron microscopy.It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration.Furtherly,we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode.It is shown that the oxygen precipitations present in an "S" curve with increasing initial oxygen concentration after high temperature diffusion.The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF),which are mainly dislocations,and a small amount of rod stacking faults.The density of B-OSF increases with the increasing initial oxygen concentration.The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.

Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

A method to improve the surge current capability of silicon carbide(SiC)merged PiN Schottky(MPS)diodes is presented and investigated via three-dimensional electro-thermal simulations.When compared with a conventional MPS diode,the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+surface,which can avoid the formation of local hotspots during the surge process.The Silvaco simulation results show that the proposed structure has a 20.29%higher surge capability and a 15.06%higher surge energy compared with a conventional MPS diode.The bipolar on-state voltage of the proposed structure is 4.69 V,which is 56.29%lower than that of a conventional MPS diode,enabling the device to enter the bipolar mode earlier during the surge process.Furthermore,the proposed structure can suppress the occurrence of‘snapback'phenomena when switching from the unipolar to the bipolar operation mode.In addition,an analysis of the surge process of MPS diodes is carried out in detail.

Design of double-layer active frequency-selective surface with PIN diodes for stealth radome

An experimental double-layer active frequency-selective surface（AFSS） for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface（FSS）, a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0°to 30° the AFSS produces more than-11.5 dB isolation across6–18 GHz when forward biased. The insertion loss（IL） is less than 0.5 dB across 10–11 GHz when reverse biased.

An Analysis of the Equivalent Resistance of PIN Diodes at Microwave Frequencies

The forward bias equivalent resistance of PIN diodes, an important parameter in applications, is usually measured at lower frequencies. But in fact, due to skin effect the effective conduction area of the region I of a PIN diode decreases as the frequency increases. In this paper, the affection of skin effect to forward bias equivalent resistance is considered and an analytic expression of the equivalent resistance of the region I is presented. In result, the forward bias resistance of a PIN diode at microwave frequencies is much higher than that at DC and low frequencies. It is necessary, therefore, to consider the skin effect of PIN diodes in high frequency applications.

A novel diode string triggered gated-Pi N junction device for electrostatic discharge protection in 65-nm CMOS technology

A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction structure is employed to reduce the diode string leakage current to 13 n A/μm in a temperature range from 25°C to 85°C. To provide the effective electrostatic discharge（ESD） protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.

一种基于PIN二极管的可切换吸透一体超材料设计

设计并验证了一种基于集总电阻和PIN二极管的可切换吸透一体超材料结构,以实现宽带透波和通带可开关特性。该超材料单元结构由连接集总电阻的交指谐振器、带通频率选择表面层以及加载PIN二极管的开关控制层组成。通过等效电路理论对单元结构与谐振频率之间的关系进行了分析。通过对单元结构的表面电流和电场分布的分析,揭示了其吸波机理。研究结果表明:当PIN二极管处于导通状态时,设计的结构在9.48~10.31GHz透波频段内插入损耗低于1d B,在5.34~8.08GHz和11.89~15.14GHz频段内具有90%以上的吸波率,并且在5.21~15.37GHz频带内整体反射系数低于-10d B,展现出良好的宽频隐身效果;而当PIN二极管处于截止状态时,原本的通带变为全反射带,反射系数大于-1d B。这一设计在隐身领域具有潜在应用价值。

基于PIN管的1-bit波束可重构反射阵

针对传统反射阵列天线不能灵活地进行波束转向,无法满足部分应用场景需求这一问题,文中设计、制作并测试了一种具有12×12个反射单元的1-bit波束可重构反射阵列。通过在两个尺寸相同的L形结构中间加载PIN二极管实现1位可重构单元,采用Ansys HFSS 15对该单元进行建模和仿真,在4.36 GHz~5.06 GHz频率范围内,单元在PIN二极管导通和断开两种状态下的相位差在180°±25°范围内,并在4.46 GHz和4.96 GHz两个频率下,具有180°相位差。对4.96 GHz进行验证,通过数字控制板独立调节每个PIN二极管,从而实现所需的相位分布。仿真和测试结果表明反射阵可以在4.96 GHz的中心频率下实现±50°范围内的波束扫描,并且在4.76 GHz~5.46 GHz频率范围内,具有相对良好的波束扫描性能。此外,反射阵采用镜面对称排布方式以改善交叉极化,实测交叉极化为-26.7 dB,相比较传统排布方式,交叉极化峰值降低了15.2 dB。

Multi-Bias Model for Power Diode Using a Very High Description Language

This study focused on the determination and analysis of an accurate analytical model for PIN diode under different bias conditions. This approach employs analytically derived expressions including the variation of the depletion regions in the device to make the used model available over a wide range of testing conditions without remake the parameters extraction procedure. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured current and voltage waveforms reverse recovery at different range of the operation conditions. The model is developed and simulated with the VHDL-AMS language under Ansoft Simplorer®Environment.

An ultrahigh-voltage 4H-SiC merged Pi N Schottky diode with three-dimensional p-type buried layers

In the modern society,there is a strong demand for semiconductor chips,and the 4H polytype silicon carbide(4H-SiC)power device is a promising candidate for the next generation semiconductor chip,which can be used in various power electronic systems.In order to improve the performance of the 4H-SiC power device,a novel ultrahigh-voltage(UHV)4H-SiC merged p-type/intrinsic/n-type(PiN)Schottky(MPS)diode with three-dimensional(3D)p-type buried layers(PBL)(3D-PBL MPS)is proposed and investigated by numerical simulation.The static forward conduction characteristics of the 3D-PBL MPS are similar to those of the conventional 4H-SiC MPS diode without the PBL(PBL-free MPS).However,when the 3D-PBL MPS is in the reverse blocking state,the 3D PBL can transfer the peak electric field(E_(peak))into a deeper position in the body of the epitaxial layer,and enhance the ability of the device to shield the high electric field at the Schottky contact interface(E_(S)),so that the reverse leakage current of the 3D-PBL MPS at 10 kV is only 0.002%of that of the PBL-free MPS.Meanwhile,the novel 3D-PBL MPS has overcome the disadvantage in the 4H-SiC MPS diode with the two-dimensional PBL(2D-PBL MPS),and the forward conduction characteristic of the 3D-PBL MPS will not get degenerated after the device converts from the reverse blocking state to the forward conduction state because of the special depletion layer variation mechanism depending on the 3D PBL.All the simulation results show that the novel UHV 3D-PBL MPS has excellent device performance.

基于变分模态分解和自动编码器的PIN二极管温度特性预测

提出融合变分模态分解(VMD)和自编码器的预测方法,将温升特性曲线分解成若干个子信号分量,其中包含高频的波动量、中间量和低频的趋势量,然后利用自编码器对每个分量进行预测,最后将分量的预测值相加,从而实现对PIN二极管温升特性曲线的精准预测。通过与多种机器学习方法的对比验证了结合VMD分解可有效提升预测精度,同时也验证了自编码器在特性曲线拟合上的优势。

电磁脉冲作用下PIN二极管的响应

采用自主开发的二维半导体器件效应模拟软件,对电磁脉冲作用下PIN二极管的响应进行了数值模拟研究,分析了PIN管在脉冲电压上升沿时间内出现的电流过冲现象。结果表明:过冲电流与高频下PIN二极管的电容性有关,过冲电流的峰值与上升沿时间有关,上升沿时间越短,峰值越大;PIN管的掺杂也会对过冲电流产生影响,P层、N层的掺杂浓度越高,过冲电流的峰值越大,过冲电流的波形下降越快;I层掺杂浓度对过冲电流也有一定影响,但并不显著。

PIN限幅器PSpice模拟与实验研究

从PIN二极管基区双极载流子扩散方程出发,通过拉普拉斯变换求解得到PIN二极管子电路模型,从而通过PSpice软件瞬态数值模拟得到了PIN限幅器的尖峰泄漏、平顶泄漏与脉冲功率、上升时间关系。对于I层厚度一定的限幅器,模拟与实验表明脉冲前沿越大,尖峰泄漏功率插入损耗越大,脉冲前沿过缓则可能没有尖峰泄漏现象;尖峰泄漏功率随着输入功率的增加而变大,但尖峰泄漏功率插损也随之增大;尖峰脉冲宽度与I层厚度、输入功率及脉冲前沿均有关系。限幅器尖峰泄漏与平顶泄漏模拟结果与实验数据基本一致。

基于PIN光电二极管的光功率计

设计了一种基于PIN光电二极管的功率检测计的硬件设计方法和程序流程,给出了其校准方法及数据修正方法。该光功率计采用PIN光电二极管实现信号的光电转换,通过对数比放大器进行前置的I/V变换及放大;采用16位A/D转换芯片AD7705保证了测量分辨率。单片机89C51作为主控制单元实现信号的检测与数据处理,并通过数据修正进一步提高了测量精度。实际测试数据和使用情况表明:该光功率检测计具有成本低、维护简单等优点,可获得-70～+10 dBm(0.1～10 mW)的动态范围、0.1 dBm的测量精度以及分辨率为0.01 dBm。