Position dependent circuit model for thin avalanche photodiodes

This paper presents a circuit model for thin avalanche photodiodes （APDs）. In this model, the nonuniformity of the electric filed in the multiplication region is modeled using a stepwise method. The model also tries to take the effects of carrier＇s position dependent properties, like carder＇s dead length and the history of carder＇s previous ionization into account by developing an effective electric field in the multiplication region. The output photocurrent and multiplication gain obtained from the proposed model for different lengths of the multi- plication region achieve a good agreement in comparison with available experimental data. In addition, calculated excess noise factor reveals the model ability for noise and sensitivity analysis.

用于电路模拟的PIN雪崩光电二极管模型

针对PIN结构的特殊性，作了适当的合理近似，考虑了p，n区少子扩散，i区载流子漂移，给出一个完整的PIN雪崩光电二极管电路模型。该模型适于在开发OEIC电路模拟软件中采用，亦可加到现有电路模拟软件中。它可用于直流、交流、瞬态分析。该模型完全适用于PIN结构光电二极管。