Experimental techniques based on SR facilities have emerged with the development of synchrotron radiation(SR)sources.Accordingly,detector miniaturization has become significant for the development of SR experimental t...Experimental techniques based on SR facilities have emerged with the development of synchrotron radiation(SR)sources.Accordingly,detector miniaturization has become significant for the development of SR experimental techniques.In this study,the miniaturization of a detector was achieved by coupling a commercial silicon PIN photodiode(SPPD)into a beamstop,aiming for it not only to acquire X-ray absorption fine structure(XAFS)spectra,but also to protect the subsequent two-dimensional detector from high-brilliance X-ray radiation damage in certain combination techniques.This mini SPPD detector coupled to a beamstop was used as the rear detector in both the conventional sampling scheme and novel high-frequency(HF)sampling scheme to collect the transmission XAFS spectra.Traditional ion chambers were also used to collect the transmission XAFS spectra,which were used as the reference.These XAFS spectra were quantitatively analyzed and compared;the results demonstrated that the XAFS spectra collected by this SPPD in both the conventional sampling scheme and HF sampling scheme are feasible.This study provides a new detector-selection scheme for the acquisition of the quick-scanning XAFS(QXAFS)and HF sampling XAFS spectra.The SPPD detector presented in this study can partially meet the requirements of detector miniaturization.展开更多
The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si PIN photodiodes with different photosensitive areas.The characteristic tunneling energy ...The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si PIN photodiodes with different photosensitive areas.The characteristic tunneling energy E（00） can be obtained to be 1.40 me V,1.53 me V,1.74 me V,1.87 me V,and 2.01 me V,respectively,for the photodiodes with L = 0.25 mm,0.5 mm,1 mm,1.5 mm,and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination mechanism.The trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device,which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive area.Our results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.展开更多
基金supported by the National Key R&D Program of China(Nos.2017YFA0403000 and 2017YFA0403100).
文摘Experimental techniques based on SR facilities have emerged with the development of synchrotron radiation(SR)sources.Accordingly,detector miniaturization has become significant for the development of SR experimental techniques.In this study,the miniaturization of a detector was achieved by coupling a commercial silicon PIN photodiode(SPPD)into a beamstop,aiming for it not only to acquire X-ray absorption fine structure(XAFS)spectra,but also to protect the subsequent two-dimensional detector from high-brilliance X-ray radiation damage in certain combination techniques.This mini SPPD detector coupled to a beamstop was used as the rear detector in both the conventional sampling scheme and novel high-frequency(HF)sampling scheme to collect the transmission XAFS spectra.Traditional ion chambers were also used to collect the transmission XAFS spectra,which were used as the reference.These XAFS spectra were quantitatively analyzed and compared;the results demonstrated that the XAFS spectra collected by this SPPD in both the conventional sampling scheme and HF sampling scheme are feasible.This study provides a new detector-selection scheme for the acquisition of the quick-scanning XAFS(QXAFS)and HF sampling XAFS spectra.The SPPD detector presented in this study can partially meet the requirements of detector miniaturization.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFF0104801)the National Natural Science Foundation of China(Grant Nos.61335004,61675046,and 61505003)
文摘The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si PIN photodiodes with different photosensitive areas.The characteristic tunneling energy E（00） can be obtained to be 1.40 me V,1.53 me V,1.74 me V,1.87 me V,and 2.01 me V,respectively,for the photodiodes with L = 0.25 mm,0.5 mm,1 mm,1.5 mm,and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination mechanism.The trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device,which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive area.Our results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.
