Multiwalled carbon nanotubes (MWCNTs) mixed in poly(3-hexylthiophene) (P3HT) were used as a photoactive layer for organic solar cells (OSC). The flexible OSCs of a structure of PET/rGO-P3HT/P3CT/PCBM/LiF-Al were prepa...Multiwalled carbon nanotubes (MWCNTs) mixed in poly(3-hexylthiophene) (P3HT) were used as a photoactive layer for organic solar cells (OSC). The flexible OSCs of a structure of PET/rGO-P3HT/P3CT/PCBM/LiF-Al were prepared by spincoating. The UV-Vis absorption spectra of the photoactive films and current-voltage characteristics of the OSCs showed the advantage of the composite devices above the pristine-polymeric ones. Under illumination of light with a 100 mW/cm<sup>2</sup>-powerdensity, the photoelectrical conversion efficiency (PCE) of the OSCs with 3.0 wt% MWNCTs embedded in the photoactive layer possess a value as large as 2.35%. The obtained results suggest further useful applications of the flexible large-area solar cells.展开更多
High-performance photonic nonvolatile memory which combines data storage and photosensing can achieve low power consumption and ensure computational energy efficiency.Heterostructure has been theoretically and experim...High-performance photonic nonvolatile memory which combines data storage and photosensing can achieve low power consumption and ensure computational energy efficiency.Heterostructure has been theoretically and experimentally proved to have synergistic effects between two materials,which can lead to promising electronic and optical properties for advanced optoelectronic devices.Herein,we report the preparation of borophene-ZnO heterostructures and their applications of broadband photonic nonvolatile memory.The memory shows a good switching ratio(5×10^(3))and long-term stability(3,600 s),which are superior to those of the pristine borophene or ZnO quantum dots(QDs).It is found that the memory shows a broad light response from ultraviolet(365 nm)to near infrared(850 nm).Besides,the SET voltage will decrease when the device is exposed to light,which can be attributed to the separation of holes and electrons in accelerating the formation of vacancy conductive filament.This work not only provides a promising material for next-generation photoelectric information,but also paves the way for borophene-based memory towards data storage devices.展开更多
Photoluminescence(PL) from self-organized Ge quantum dots(QDs) with large size and low density has been investigated over a temperature range from 10 to 300 K using continuous-wave(CW) optical excitation.The integrate...Photoluminescence(PL) from self-organized Ge quantum dots(QDs) with large size and low density has been investigated over a temperature range from 10 to 300 K using continuous-wave(CW) optical excitation.The integrated PL intensity of QDs observed is negligible at about 10 K and rapidly increases with raising temperature up to 100 K.Through analyzing the PL experimental data of the QDs and wetting layer(WL),we provide direct evidence that there exists a potential barrier,arising from the greater compressive strain surrounding large QDs,which could trap carriers in WL at low temperatures and could be overcome via increasing temperature.展开更多
文摘Multiwalled carbon nanotubes (MWCNTs) mixed in poly(3-hexylthiophene) (P3HT) were used as a photoactive layer for organic solar cells (OSC). The flexible OSCs of a structure of PET/rGO-P3HT/P3CT/PCBM/LiF-Al were prepared by spincoating. The UV-Vis absorption spectra of the photoactive films and current-voltage characteristics of the OSCs showed the advantage of the composite devices above the pristine-polymeric ones. Under illumination of light with a 100 mW/cm<sup>2</sup>-powerdensity, the photoelectrical conversion efficiency (PCE) of the OSCs with 3.0 wt% MWNCTs embedded in the photoactive layer possess a value as large as 2.35%. The obtained results suggest further useful applications of the flexible large-area solar cells.
基金supported by the National Natural Science Foundation of China(No.61774085),Natural Science Foundation of Jiangsu Province(No.BK20201300)the Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures(NUAA)(No.MCMS-I-0420G02)+4 种基金the Fundamental Research Funds for the Central Universities(No.NP2022401)the Fund of Prospective Layout of Scientific Research for NUAA(Nanjing University of Aeronautics and Astronautics)(No.ILA22009)the Priority Academic Program Development of Jiangsu Higher Education Institutions,the Funding for Outstanding Doctoral Dissertation in NUAA(No.BCXJ22-02)the Interdisciplinary Innovation Fund for Doctoral Students of Nanjing University of Aeronautics and Astronautics(No.KXKCXJJ202201)the Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.KYCX22_0329).
文摘High-performance photonic nonvolatile memory which combines data storage and photosensing can achieve low power consumption and ensure computational energy efficiency.Heterostructure has been theoretically and experimentally proved to have synergistic effects between two materials,which can lead to promising electronic and optical properties for advanced optoelectronic devices.Herein,we report the preparation of borophene-ZnO heterostructures and their applications of broadband photonic nonvolatile memory.The memory shows a good switching ratio(5×10^(3))and long-term stability(3,600 s),which are superior to those of the pristine borophene or ZnO quantum dots(QDs).It is found that the memory shows a broad light response from ultraviolet(365 nm)to near infrared(850 nm).Besides,the SET voltage will decrease when the device is exposed to light,which can be attributed to the separation of holes and electrons in accelerating the formation of vacancy conductive filament.This work not only provides a promising material for next-generation photoelectric information,but also paves the way for borophene-based memory towards data storage devices.
基金supported by the Ministry of Science and Technology of China, the National Natural Science Foundation of China (Grant Nos.10471026 and 10874212)the National High Technology Research and Development Program of China (Grant No 2006AA03A107)
文摘Photoluminescence(PL) from self-organized Ge quantum dots(QDs) with large size and low density has been investigated over a temperature range from 10 to 300 K using continuous-wave(CW) optical excitation.The integrated PL intensity of QDs observed is negligible at about 10 K and rapidly increases with raising temperature up to 100 K.Through analyzing the PL experimental data of the QDs and wetting layer(WL),we provide direct evidence that there exists a potential barrier,arising from the greater compressive strain surrounding large QDs,which could trap carriers in WL at low temperatures and could be overcome via increasing temperature.
