A novel capacitive pressure sensor is presented, whose sensing structure is a solid-state capacitor consisting of three square membranes with Al/SiO2/n-type silicon. It was fabricated using pn junction self-stop etchi...A novel capacitive pressure sensor is presented, whose sensing structure is a solid-state capacitor consisting of three square membranes with Al/SiO2/n-type silicon. It was fabricated using pn junction self-stop etching combined with adhesive bonding,and only three masks were used during the process. Sensors with side lengths of 1000,1200,and 1400μm were fabricated,showing sensitivity of 1.8,2.3, and 3.6fF/hPa over the range of 410～ 1010hPa, respectively. The sensi- tivity of the sensor with a side length of 1500μm is 4. 6fF/hPa,the nonlinearity is 6. 4% ,and the max hysteresis is 3.6%. The results show that permittivity change plays an important part in the capacitance change.展开更多
文摘A novel capacitive pressure sensor is presented, whose sensing structure is a solid-state capacitor consisting of three square membranes with Al/SiO2/n-type silicon. It was fabricated using pn junction self-stop etching combined with adhesive bonding,and only three masks were used during the process. Sensors with side lengths of 1000,1200,and 1400μm were fabricated,showing sensitivity of 1.8,2.3, and 3.6fF/hPa over the range of 410～ 1010hPa, respectively. The sensi- tivity of the sensor with a side length of 1500μm is 4. 6fF/hPa,the nonlinearity is 6. 4% ,and the max hysteresis is 3.6%. The results show that permittivity change plays an important part in the capacitance change.
