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POCl3 diffusion for industrial Si solar cell emitter formation 被引量:1
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作者 Hongzhao LI Kyung KIM +3 位作者 Brett HALLAM Bram HOEX Stuart WENHAM Malcolm ABBOTT 《Frontiers in Energy》 SCIE CSCD 2017年第1期42-51,共10页
POCl3 diffusion is currently the de facto standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical perf... POCl3 diffusion is currently the de facto standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in tempera- ture and duration, drive-in O2 flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl3 tube diffused emitters. 展开更多
关键词 pocl3 diffusion emitter recombination oxidation silicon
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