衬底对PTCDA薄膜结构与电荷输运特性的影响

在不同导电衬底(Au,Al和ITO)上制备了PTCDA薄膜,用XRD和AFM技术研究了PTCDA薄膜的结构和表面形貌。结果表明,薄膜中的大部分PTCDA分子平面与衬底不平行,这表明薄膜垂直方向的电流传导将以电子传输为主;在ITO和Au衬底上生长的PTCDA薄膜晶粒排列规则,在薄膜垂直方向呈现出较好的电子传输性能;而在Al衬底上生长的PTCDA薄膜晶粒排列无序,电子传输性能差。通过制备单层结构有机薄膜器件,研究了PTCDA薄膜垂直方向的电子迁移率。综合应用金属-有机界面的热电子发射理论和有机层体内空间电荷限制传导理论,并考虑电场强度对迁移率变化的影响,对ITO/PTCDA/Al器件的电流密度-电压曲线进行拟合,得到ITO衬底上生长的PTCDA薄膜在垂直方向随电场强度变化的电子迁移率数值。

基于不同π核扩展方式萘四甲酰基二酰亚胺有机半导体电荷传输性质的理论研究

n型半导体材料在逻辑互补电路中必不可少,但由于多数n型有机半导体材料空气稳定性差、迁移率较低,其发展相对滞后.本文基于几种典型的不同π核扩展的萘四甲酰基二酰亚胺(NDI)有机半导体材料,利用第一性原理计算分析了其电荷传输性质,分别从单分子结构特征、分子间堆积方式以及分子间相互作用等方面阐明不同核心结构对载流子传输性质的影响.结果表明,所研究分子均具有良好的空气稳定性,并表现为电子传输性.其中,长轴π扩展的分子A2具有较高的电子亲和势,其空气稳定性最好.其次,沿长轴/短轴π扩展的NDI有机半导体的重组能均降低,但二者重组能降低的起因明显不同:相比于A1分子,沿短轴π扩展的A2分子在高频区的振动受到有效的抑制,从而重组能大幅下降;而沿长轴π扩展的A3与A4分子则在高低频区的振动均受到抑制,使重组能降低.另外,不同的分子堆积对传输影响较大,发现沿长轴π扩展的A3和A4具有较小的短轴滑移,表现为二维传输材料,二维平均电子迁移率分别约为0.06与0.15cm^(2)·V^(-1)·s^(-1);沿短轴π扩展的A2分子具有较大的短轴滑移,因此表现为一维传输材料,其一维电子迁移率高达0.96cm^(2)·V^(-1)·s^(-1).

Experimental and theoretical study of the charge transport property of 4,4′-N,N′-dicarbazole-biphenyl

The hole and electron mobilities of the amorphous films of the organic semiconductor 4,4′-N,N′-dicarbazole-biphenyl (CBP) at different electric fields were measured through the time of flight (TOF) method. Based on its crystalline structure, the hole and electron mobilities of CBP were calculated. A detailed comparison between experimental and theoretical results is necessary for further understanding its charge transport properties. In order to do this, charge mobilities at zero electric field, μ(0), were deduced from experimental data as a link between experimental and theoretical data. It was found that the electron transport of CBP is less affected by traps compared with its hole transport. This unusual phenomenon can be understood through the distributions of frontier molecular orbitals. We showed that designing materials with frontier molecular orbitals localized at the center of the molecule has the potency to reduce the influence of traps on charge transport and provide new insights into designing high mobility charge transport materials.

Progress of pyrene-based organic semiconductor in organic field effect transistors

Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes(OLEDs), organic field effect transistors(OFETs), and organic solar cells(OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006,illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.

Tuning crystal polymorphs of a π-extended tetrathiafulvalene-based cruciform molecule towards high-performance organic field-effect transistors

It is a common phenomenon for organic semi- conductors to crystallize in two or more polymorphs, leading to various molecular packings and different charge transport properties. Therefore, it is a crucial issue of tuning molec- ular crystal polymorphs （i.e., adjusting the same molecule with different packing arrangements in solid state） towards efficient charge transport and high performance devices. Here, the choice of solvent had a marked effect on con- trolling the growth of a-phase ribbon and β-phase platelet during crystallization for an indenofluorene （IF） π-extended tetrathiafulvalene （TTF）-based cruciform molecule, named as IF-TTF. The charge carrier mobility of the a-phase IF-TTF crystals was more than one order of magnitude higher than that of β-phase crystals, suggesting the importance of reasonably tuning molecular packing in solid state for the improvement of charge transport in organic semiconductors.

有机半导体中载流子迁移率的测量方法

本文简要地介绍了有机半导体中载流子迁移率的几种模型,着重阐述了测量有机半导体中载流子迁移率的各种方法的测试原理。主要有如下几种:稳态(CW)直流电流-电压特性法(steady-state DC JV),飞行时间法(time of flight,TOF),瞬态电致发光法(transient electroluminescence,transient EL),瞬态电致发光法的修正方法即双脉冲方波法和线性增压载流子瞬态法(carrier extraction by linearly increasing voltage,CELIV),暗注入空间电荷限制电流(dark injection space charge limited current,DI SCLC),场效应晶体管方法(field-effect transistor,FET),时间分辨微波传导技术(time-resolved microwave conductivity technique,TRMC),电压调制毫米波谱(voltage-modulated millimeter-wave spectroscopy,VMS)光诱导瞬态斯塔克谱方法(photoinducedtransient Stark spectroscopy),阻抗(导纳)谱法(impedance(admittance)spectroscopy)。说明了各种实验方法的应用范围、使用条件和优缺点。