对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PT...对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PTCDA薄膜中仅存在α物相。利用XPS对样品测试得出,在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合,其结合能为532.4 e V;苝核基团外围的8个C、H原子以共价键结合,其结合能为289.0 e V;在界面处,悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合,形成C—Si—O键及C—Si键,构成了界面层的稳定结构。展开更多
Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and in...Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy （XPS） and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTODA/p- Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of C1s and O1s are more remarkable.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
文摘对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PTCDA薄膜中仅存在α物相。利用XPS对样品测试得出,在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合,其结合能为532.4 e V;苝核基团外围的8个C、H原子以共价键结合,其结合能为289.0 e V;在界面处,悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合,形成C—Si—O键及C—Si键,构成了界面层的稳定结构。
基金Project is supported by the National Natural Science Foundationof China (Grant No 60076023)
文摘Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy （XPS） and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTODA/p- Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of C1s and O1s are more remarkable.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
