PZT(Zr/Ti=52/48) ferroelectric films are prepared by a new modified Sol-Gel method from three stable-separated Pb2+, Zr4+, Ti4+ precursor–monomers. This method needs no distillation and has the advantage of easy chan...PZT(Zr/Ti=52/48) ferroelectric films are prepared by a new modified Sol-Gel method from three stable-separated Pb2+, Zr4+, Ti4+ precursor–monomers. This method needs no distillation and has the advantage of easy change of the Pb2+/Zr4+/Ti4+ stoichiometric. In the paper we also investigate PT seeds influence on ferroelectric properties, crystallographic structures and surface morphologies, and find the bottom/up PT seeds structure prompte PZT crystallization and have superior ferroeletric properties. The paper introduce a method to deduce and calculate lattice constant α by ‘least square method’, then the more accurate lattice constant a0 can be got from X-ray diffractometer (XRD) analysis data. We also discover that grain sizes of PZT film calculated from XRD data are much closed to those of AFM, and the film a0 is relatively small due to crushing stress.展开更多
Energy harvesting was demonstrated in hydrothermal PZT nanocrystal films driven by ultra-sound.With high temperature sintering and solution infiltration,PZT films with nanograin sizewas found to exhibit bulk-like prop...Energy harvesting was demonstrated in hydrothermal PZT nanocrystal films driven by ultra-sound.With high temperature sintering and solution infiltration,PZT films with nanograin sizewas found to exhibit bulk-like properties such as large remnant polarization of 42μC/cm^(2).Withthe bulk-like properties,a packaged PZT film device was demonstrated to be capable of convertingmechanical energy carried by the ultrasonic wave into electrical energy in a reliable and efficient way.The result suggests an alternative potential solution for energy harvesting application.展开更多
PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effect...PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.展开更多
Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency ...Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency （RF） magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34..357 rim, 2. 479 nm and 1. 954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.5. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10μC/cm^2 and 13μC/cm^2 respectively.展开更多
This article mainly deals with the preparation and properties of PZTthin films. A new type of Metal-Me tal Oxide composite target was developed. Relating factors have been discussed. The electrical and optical propert...This article mainly deals with the preparation and properties of PZTthin films. A new type of Metal-Me tal Oxide composite target was developed. Relating factors have been discussed. The electrical and optical properties of PZT thin films have also been studied.展开更多
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/ Ti/SiO2/Si substrates to understand the mechanisms of phase transformations in these films. PZT fil...Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/ Ti/SiO2/Si substrates to understand the mechanisms of phase transformations in these films. PZT films pyrolyzed at temperatures higher than 350℃ present a coexistence of pyrochlore and perovskite phases, while only perovskite phase is present in films pyrolyzed at temperatures lower than 300℃. For films where the pyrochlore and perovskite phase coexists the amount of pyrochlore phase decreases from top surface to the bottom film-electrode interface and the PZT structure near top surface are Ti-rich compositions while near the bottom film-electrode interface the compositions are Zr-rich. For pyrochlore-free PZT thin film, a small (100) orientation tendency near the film-electrode interface was observed.展开更多
基金Supported by the Ferroelectric Films Part of 973 Projects (No.51310Z02)
文摘PZT(Zr/Ti=52/48) ferroelectric films are prepared by a new modified Sol-Gel method from three stable-separated Pb2+, Zr4+, Ti4+ precursor–monomers. This method needs no distillation and has the advantage of easy change of the Pb2+/Zr4+/Ti4+ stoichiometric. In the paper we also investigate PT seeds influence on ferroelectric properties, crystallographic structures and surface morphologies, and find the bottom/up PT seeds structure prompte PZT crystallization and have superior ferroeletric properties. The paper introduce a method to deduce and calculate lattice constant α by ‘least square method’, then the more accurate lattice constant a0 can be got from X-ray diffractometer (XRD) analysis data. We also discover that grain sizes of PZT film calculated from XRD data are much closed to those of AFM, and the film a0 is relatively small due to crushing stress.
文摘Energy harvesting was demonstrated in hydrothermal PZT nanocrystal films driven by ultra-sound.With high temperature sintering and solution infiltration,PZT films with nanograin sizewas found to exhibit bulk-like properties such as large remnant polarization of 42μC/cm^(2).Withthe bulk-like properties,a packaged PZT film device was demonstrated to be capable of convertingmechanical energy carried by the ultrasonic wave into electrical energy in a reliable and efficient way.The result suggests an alternative potential solution for energy harvesting application.
基金supported by the National Natural Science Foundation of China (No. 50872080)Shanghai Special Foundation of Nanotechnology (No. 1052nm07300)+1 种基金Shanghai Education Development Foundation (No. 08SG41)Shanghai Leading Academic Disciplines (No. S30107)
文摘PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.
文摘Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency （RF） magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34..357 rim, 2. 479 nm and 1. 954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.5. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10μC/cm^2 and 13μC/cm^2 respectively.
文摘This article mainly deals with the preparation and properties of PZTthin films. A new type of Metal-Me tal Oxide composite target was developed. Relating factors have been discussed. The electrical and optical properties of PZT thin films have also been studied.
文摘Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/ Ti/SiO2/Si substrates to understand the mechanisms of phase transformations in these films. PZT films pyrolyzed at temperatures higher than 350℃ present a coexistence of pyrochlore and perovskite phases, while only perovskite phase is present in films pyrolyzed at temperatures lower than 300℃. For films where the pyrochlore and perovskite phase coexists the amount of pyrochlore phase decreases from top surface to the bottom film-electrode interface and the PZT structure near top surface are Ti-rich compositions while near the bottom film-electrode interface the compositions are Zr-rich. For pyrochlore-free PZT thin film, a small (100) orientation tendency near the film-electrode interface was observed.
