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Effect of the Transient Response in Si/Ge Parallelizing PN Junction 被引量:10
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作者 Weiqi HUANGt and Chaogang CHEN(Department of Physics, Guizhou Educational College, Guiyan 550003, China)Ergang CHEN(Department of Physics, Yunnan University, Kunming 650091, China)To whom correspondence should be addressed 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1999年第4期383-383,共1页
There are some new results about photovoltaic transient response in the new effect. We suggest a theoretical model to explain the effect reasonably. The theoretical calculation results agree with that in experiments.
关键词 PN SI Ge Effect of the Transient response in Si/Ge parallelizing PN Junction
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