A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external p...A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.展开更多
We present an improved large-signal device model of GaAs/GaN HEMTs, amenable for use in com- mercial nonlinear simulators. The proposed model includes a new exponential function to independently control the transcondu...We present an improved large-signal device model of GaAs/GaN HEMTs, amenable for use in com- mercial nonlinear simulators. The proposed model includes a new exponential function to independently control the transconductance compression/tail-off behaviors. The main advantage of this model is to provide a simple and coherent description of the bias-dependent drain current （Ⅰ-V） that is valid in all regions of operation. All aspects of the model are validated for 0.25μm gate-length GaAs and GaN HEMT processes. The simulation results of DC/pulsed Ⅰ-V, RF large-signal power and intermodulation distortion products show excellent agreement with the measured data.展开更多
基金Project supported by the National Natural Science Foundation of China(No.60806024)
文摘A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.
文摘We present an improved large-signal device model of GaAs/GaN HEMTs, amenable for use in com- mercial nonlinear simulators. The proposed model includes a new exponential function to independently control the transconductance compression/tail-off behaviors. The main advantage of this model is to provide a simple and coherent description of the bias-dependent drain current （Ⅰ-V） that is valid in all regions of operation. All aspects of the model are validated for 0.25μm gate-length GaAs and GaN HEMT processes. The simulation results of DC/pulsed Ⅰ-V, RF large-signal power and intermodulation distortion products show excellent agreement with the measured data.
