One-dimensional and quasi-one-dimensional nanostructure materials are promising building blocks for electromagnetic devices and nanosystems.In this work,the composite Ni0.5Zn0.5Fe2O4（NZFO）/ Pb（Zr0.52Ti0.48）O3（PZT...One-dimensional and quasi-one-dimensional nanostructure materials are promising building blocks for electromagnetic devices and nanosystems.In this work,the composite Ni0.5Zn0.5Fe2O4（NZFO）/ Pb（Zr0.52Ti0.48）O3（PZT） nanofibers with average diameters about 65 nm are prepared by electrospinning from poly（vinyl pyrrolidone） （PVP） and metal salts.The precursor composite NZFO/PZT/PVP nanofibers and the subsequent calcined NZFO/PZT nanofibers are investigated by Fourier transform infrared spectroscopy （FT- IR） ,X-ray diffraction （XRD）,scanning electron microscopy （SEM）.The magnetic properties for nanofibers are measured by vibrating sample magnetometer（VSM）.The NZFO/PZT nanofibers obtained at calcination temperature of 900 °C for 2 h consist of the ferromagnetic spinel NZFO and ferroelectric perovskite PZT phases,which are constructed from about 37 nm NZFO and 17 nm PZT grains.The saturation magnetization of these NZFO/PZT nanofibers increases with increasing calcination temperature and contents of NZFO in the composite.展开更多
The PZT thin films were prepared on （111）- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb（CH3COO）2], zirconium nitrate [Zr（NO3）4] were used as raw materials. The X-ray diffractometer （XRD） an...The PZT thin films were prepared on （111）- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb（CH3COO）2], zirconium nitrate [Zr（NO3）4] were used as raw materials. The X-ray diffractometer （XRD） and scanning electron microscopy （SEM） were used to characterize the phase structure and surface morphology of the films annealed at 650 ~C but with different holding time. Ferroelectric and dielectric properties of the films were measured by the ferroelectric tester and the precision impedance analyzer, respectively. The PZT thin films were constructed with epoxy resin as a composite structure, and the damping properties of the composite were tested by dynamic mechanical analyzer （DMA）. The results show that the films annealed for 90 minutes present a dense and compact crystal arrangement on the surface; moreover, the films also achieve their best electric quality. At the same time, the largest damping loss factor of the composite constructed with the 90 mins-annealed film shows peak value of 0.9, hi^her than the pure epoxy resin.展开更多
LaNiO3 (LNO) thin films were prepared on Pt(111) / Ti / SiO2 / Si substrate by metal-organic decomposition (MOD) method. Pb(Zr,Ti)O3 ferroelectric thin films and their compositionally graded thin films were prepared o...LaNiO3 (LNO) thin films were prepared on Pt(111) / Ti / SiO2 / Si substrate by metal-organic decomposition (MOD) method. Pb(Zr,Ti)O3 ferroelectric thin films and their compositionally graded thin films were prepared on LNO / Pt / Ti / SiO2 /Si substrates by Sol-gel method. The composition depth profile of a typical up-graded film was determined by using a combination of Auger Electron Spectroscopy (ASE) and Ar Ion Etching. The results confirm that the processing method produces graded composition changes. XRD analysis showed that the graded thin films possessed composite structure of tetragonal and rhombohedral. The dielectric constants of Up-graded and Down-graded thin films were higher than that of each thin film unit. The dielectric constants were 277 and 269 at 10 kHz, respectively. The loss tangents were 0.019 and 0.018 at 10 kHz, respectively. The Hysteresis loops showed that the remanent polarizations of graded thin films were higher than that of each thin film unit, but the coercive fields were smaller. The remanent polarizations of Up-graded and Down-graded thin films were 30.06 and 26.96 μC·cm-2, respectively. The coercive fields were 54.14, 54.23 kV·cm-1, respectively. The pyroelectric coefficients of Up-graded and Down-graded thin films were 4.62, 2.51×10-8 C·cm-2·K-1 at room temperature, respectively. They were higher than that of each thin film unit.展开更多
Sol-gel based soft lithography technique has been developed to pattern a variety of ferroelectric Pb（Zr0.52Ti0.48）O3（PZT） microstructures,with feature size approaching 180 nm and good pattern transfer between the ...Sol-gel based soft lithography technique has been developed to pattern a variety of ferroelectric Pb（Zr0.52Ti0.48）O3（PZT） microstructures,with feature size approaching 180 nm and good pattern transfer between the master mold and patterned films.X-ray diffraction and high-resolution transmission electron microscopy confirm the perovskite structure of the patterned PZT.Piezoresponse force microscopy（PFM） and switching spectroscopy piezoresponse force microscopy（SSPFM） confirm their piezoelectricity and ferroelectricity.Piezoresponse as high as 2.75 nm has been observed,comparable to typical PZT films.The patterned PZT microstructures are promising for a wide range of device applications.展开更多
Pb（Zr0.4Ti0.6）O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors...Pb（Zr0.4Ti0.6）O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.展开更多
A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are inves...A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop withP t=15 μC/cm2 andE c=48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12%. The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7×10?8 A/cm2 at a voltage of +4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic “1” and logic “0” at a read voltage of +2V, and the stored logical value (“1” or “0”) could be read out in 30 min.展开更多
基金Funded by the National Natural Science Foundation of China (No. 50674048)Research Fund for the Doctoral Program of Higher Education of China(No.20103227110006)
文摘One-dimensional and quasi-one-dimensional nanostructure materials are promising building blocks for electromagnetic devices and nanosystems.In this work,the composite Ni0.5Zn0.5Fe2O4（NZFO）/ Pb（Zr0.52Ti0.48）O3（PZT） nanofibers with average diameters about 65 nm are prepared by electrospinning from poly（vinyl pyrrolidone） （PVP） and metal salts.The precursor composite NZFO/PZT/PVP nanofibers and the subsequent calcined NZFO/PZT nanofibers are investigated by Fourier transform infrared spectroscopy （FT- IR） ,X-ray diffraction （XRD）,scanning electron microscopy （SEM）.The magnetic properties for nanofibers are measured by vibrating sample magnetometer（VSM）.The NZFO/PZT nanofibers obtained at calcination temperature of 900 °C for 2 h consist of the ferromagnetic spinel NZFO and ferroelectric perovskite PZT phases,which are constructed from about 37 nm NZFO and 17 nm PZT grains.The saturation magnetization of these NZFO/PZT nanofibers increases with increasing calcination temperature and contents of NZFO in the composite.
基金Supported by the National Natural Science Foundation of China (No. 50772083)China-Japan Cooperation Program(No. 2010DFA51270)the Fundamental Research Funds for the Central Universities
文摘The PZT thin films were prepared on （111）- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb（CH3COO）2], zirconium nitrate [Zr（NO3）4] were used as raw materials. The X-ray diffractometer （XRD） and scanning electron microscopy （SEM） were used to characterize the phase structure and surface morphology of the films annealed at 650 ~C but with different holding time. Ferroelectric and dielectric properties of the films were measured by the ferroelectric tester and the precision impedance analyzer, respectively. The PZT thin films were constructed with epoxy resin as a composite structure, and the damping properties of the composite were tested by dynamic mechanical analyzer （DMA）. The results show that the films annealed for 90 minutes present a dense and compact crystal arrangement on the surface; moreover, the films also achieve their best electric quality. At the same time, the largest damping loss factor of the composite constructed with the 90 mins-annealed film shows peak value of 0.9, hi^her than the pure epoxy resin.
文摘LaNiO3 (LNO) thin films were prepared on Pt(111) / Ti / SiO2 / Si substrate by metal-organic decomposition (MOD) method. Pb(Zr,Ti)O3 ferroelectric thin films and their compositionally graded thin films were prepared on LNO / Pt / Ti / SiO2 /Si substrates by Sol-gel method. The composition depth profile of a typical up-graded film was determined by using a combination of Auger Electron Spectroscopy (ASE) and Ar Ion Etching. The results confirm that the processing method produces graded composition changes. XRD analysis showed that the graded thin films possessed composite structure of tetragonal and rhombohedral. The dielectric constants of Up-graded and Down-graded thin films were higher than that of each thin film unit. The dielectric constants were 277 and 269 at 10 kHz, respectively. The loss tangents were 0.019 and 0.018 at 10 kHz, respectively. The Hysteresis loops showed that the remanent polarizations of graded thin films were higher than that of each thin film unit, but the coercive fields were smaller. The remanent polarizations of Up-graded and Down-graded thin films were 30.06 and 26.96 μC·cm-2, respectively. The coercive fields were 54.14, 54.23 kV·cm-1, respectively. The pyroelectric coefficients of Up-graded and Down-graded thin films were 4.62, 2.51×10-8 C·cm-2·K-1 at room temperature, respectively. They were higher than that of each thin film unit.
基金support from National Natural Science Foundation of China (Grant Nos. 10772155,10732100 and 10902095)the Provincial Natural Science Foundation of Hunan Province, China (Grant Nos.07JJ1008 and 09JJ7004)+2 种基金the Scientific Research Fund of Hunan Provincial Education Department (Grant No.08C864)The Asylum Research MFP-3D Atomic Force Microscope was acquired through an ARO DURIP grant(W911NF-08-01-0262)support from US National Science Foundation (DMR 0706100 and OS)
文摘Sol-gel based soft lithography technique has been developed to pattern a variety of ferroelectric Pb（Zr0.52Ti0.48）O3（PZT） microstructures,with feature size approaching 180 nm and good pattern transfer between the master mold and patterned films.X-ray diffraction and high-resolution transmission electron microscopy confirm the perovskite structure of the patterned PZT.Piezoresponse force microscopy（PFM） and switching spectroscopy piezoresponse force microscopy（SSPFM） confirm their piezoelectricity and ferroelectricity.Piezoresponse as high as 2.75 nm has been observed,comparable to typical PZT films.The patterned PZT microstructures are promising for a wide range of device applications.
基金Supported by the National Natural Science Foundation of China under Grant No 90407023, and the National High Technology Program of China under Grant No 2004AA404240.
文摘Pb（Zr0.4Ti0.6）O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.
基金This work was supported by the National Natural Science Foundation of China (Grant No. 69771024) the Natural Science Foundation of Hebei Province (Grant No. 98J026) .
文摘A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop withP t=15 μC/cm2 andE c=48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12%. The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7×10?8 A/cm2 at a voltage of +4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic “1” and logic “0” at a read voltage of +2V, and the stored logical value (“1” or “0”) could be read out in 30 min.
