High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensiti...High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6 × 10^(9)cm·Hz^(1/2)/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.展开更多
PbSe films with different nanostructures, such as nanoparticles, nanohollows and hierarchical structures, can be synthesized by adjusting the current density and the reaction temperature via a convenient and efficient...PbSe films with different nanostructures, such as nanoparticles, nanohollows and hierarchical structures, can be synthesized by adjusting the current density and the reaction temperature via a convenient and efficient electrochemical route in the absence of hard template and surfactant. The calculated band gaps of the prepared PbSe nanoparticles and nanohollows were about 0.32 and 0.43 eV, respectively. This suggests that quantum size effect in nanohollows greatly influences their band gap. This preparation method possesses remarkable advantages, such as low cost, high efficiency and easy preparation, which are very suitable for preparing nanomaterials.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61605207, 61704172, and 61705229)the Key Research and Development Plan of the Ministry of Science and Technology of China (Grant No. 2017YFE0131900)+1 种基金the Western Light Program of the Chinese Academy of SciencesYouth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018416)。
文摘High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6 × 10^(9)cm·Hz^(1/2)/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.
文摘PbSe films with different nanostructures, such as nanoparticles, nanohollows and hierarchical structures, can be synthesized by adjusting the current density and the reaction temperature via a convenient and efficient electrochemical route in the absence of hard template and surfactant. The calculated band gaps of the prepared PbSe nanoparticles and nanohollows were about 0.32 and 0.43 eV, respectively. This suggests that quantum size effect in nanohollows greatly influences their band gap. This preparation method possesses remarkable advantages, such as low cost, high efficiency and easy preparation, which are very suitable for preparing nanomaterials.
