Structure,ferroelectric,and enhanced fatigue properties of sol–gel-processed new Bi-based perovskite thin films of Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)

Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT) are deposited on Pt(111)/Ti/SiO_(2)/Si substrates in the present study by the traditional sol–gel method.Their structures and related ferroelectric and fatigue characteristics are studied in-depth.The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100) orientation together with a dense and homogeneous microstructure.The remnant polarization(2P_(r)) values at 30 μC/cm^(2) and 16 μC/cm^(2) are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT–0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6% of the starting values after 10^(8) cycles,indicating promising applications in ferroelectric memories.

Al_(2)O_(3)层厚度对PbZrO_(3)/Al_(2)O_(3)异质结薄膜储能性能的影响

为了提高Pt/PbZrO_(3)/Pt电介质电容器的储能密度,通过热蒸镀和自然氧化方法在Pt/Ti/SiO_(2)/Si基板上沉积了厚度为0~10 nm的Al_(2)O_(3)(AO)层,采用化学溶液沉积法制备PbZrO_(3)薄膜,研究了Al_(2)O_(3)层厚度对PbZrO_(3)/Al_(2)O_(3)(PZO/AO)异质结薄膜储能性能的影响。结果表明:随着AO层厚度的增加,PZO/AO异质结薄膜的击穿电场强度逐渐增大,极化电场电滞回线由反铁电特征转变为铁电特征。当PZO/AO异质结薄膜的AO层厚度为5 nm时,储能密度最大值为21.2 J/cm^(3)。

Transfer film effects induced by 3D-printed polyether-ether-ketone with excellent tribological properties for joint prosthesis

Based on the building principle of additive manufacturing,printing orientation mainly determines the tribological properties of joint prostheses.In this study,we created a polyether-ether-ketone(PEEK)joint prosthesis using fused filament fabrication and investigated the effects of printing orientation on its tribological properties using a pin-on-plate tribometer in 25% newborn calf serum.An ultrahigh molecular weight polyethylene transfer film is formed on the surface of PEEK due to the mechanical capture of wear debris by the 3D-printed groove morphology,which is significantly impacted by the printing orientation of PEEK.When the printing orientation was parallel to the sliding direction of friction,the number and size of the transfer film increased due to higher steady stress.This transfer film protected the matrix and reduced the friction coefficient and wear rate of friction pairs by 39.13%and 74.33%,respectively.Furthermore,our findings provide a novel perspective regarding the role of printing orientation in designing knee prostheses,facilitating its practical applications.

Preparation,Characterization and Photothermal Study of PVA/Ti_(2)O_(3) Composite Films

In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).

Identifying the enhancement mechanism of Al/MoO_(3) reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model

Energetic Semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics device.Understanding the ignition enhancement mechanism of RMFs on semiconductor bridge(SCB)during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics devices.In this study,a one-dimensional(1D)gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO_(3) RMFs.In order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process,the heat release of chemical reaction in RMFs was used as an internal heat source in this model.It is found that the exothermal reaction in RMFs improved the ignition performance of SCB.In the process of plasma rapid condensation with heat release,the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle,which accelerated the expansion of hot plasma,and heated the solid charge particle as well as gas phase region with low temperature.In addition,it made up for pressure loss in the gas phase.During the plasma dissipation process,the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle,making the surface temperature of the charge particle,gas pressure,and gas temperature rise continuously.This result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices.

XPS Study of Electroless Deposited Sb2Se3 Thin Films for Solar Cell Absorber Material

As a thin film solar cell absorber material, antimony selenide (Sb2Se3) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb2Se3 thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.

Corrosion characteristics of single-phase Mg-3Zn alloy thin film for biodegradable electronics

Biodegradable metals as electrodes, interconnectors, and device conductors are essential components in the emergence of transient electronics, either for passive implants or active electronic devices, especially in the fields of biomedical electronics. Magnesium and its alloys are strong candidates for biodegradable and implantable conducting materials because of their high conductivity and biocompatibility, in addition to their well-understood dissolution behavior. One critical drawback of Mg and its alloys is their considerably high dissolution rates originating from their low anodic potential, which disturbs the compatibility to biomedical applications. Herein, we introduce a single-phase thin film of a Mg-Zn binary alloy formed by sputtering, which enhances the corrosion resistance of the device electrode, and verify its applicability in biodegradable electronics. The formation of a homogeneous solid solution of single-phase Mg-3Zn was confirmed through X-ray diffraction and transmission electron microscopy. In addition, the dissolution behavior and chemistry was also investigated in various biological fluids by considering the effect of different ion species. Micro-tensile tests showed that the Mg-3Zn alloy electrode exhibited an enhanced yield strain and elongation in relation to a pure Mg electrode. Cell viability test revealed the high biocompatibility rate of the Mg-3Zn binary alloy thin film. Finally, the fabrication of a wireless heater demonstrated the integrability of biodegradable electrodes and highlighted the ability to prolong the lifecycle of thermotherapy-relevant electronics by enhancing the dissolution resistance of the Mg alloy.

Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition

Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

Depth Profile Study of Electroless Deposited Sb2S3 Thin Films Using XPS for Photovoltaic Applications

Sb2S3 has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb2S3 thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.

Investigation of Sprayed Lu2O3 Thin Films Using XPS

Spray pyrolysis method was used to deposit Lutetium Oxide (Lu2O3) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu2O3 thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.

XPS Depth Profile Study of Sprayed Ga2O3 Thin Films

Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga2O3 thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.

Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

Er^(3+) Doped BaTiO_3 Optical-Waveguide Thin Films Elaborated by Sol-Gel Method

Erbium doped BaTiO 3 optical-waveguide films on Pyrex substrate was elaborated successfully through sol-gel method. BaTiO 3 is well crystallized when the film is annealed at 650 ℃ in air circumstance. The so-prepared films with 13 layers have comparatively lower refractive index than bulk BaTiO 3, and it can support two TM and TE modes. Photoluminescence and up-conversion luminescence spectra proved the successful doping of rare earth ions.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

Intercalating Ultrathin MoO_3 Nanobelts into MXene Film with Ultrahigh Volumetric Capacitance and Excellent Deformation for High-Energy-Density Devices

The restacking hindrance of MXene films restricts their development for high volumetric energy density of flexible supercapacitors toward applications in miniature,portable,wearable or implantable electronic devices.A valid solution is construction of rational heterojunction to achieve a synergistic property enhancement.The introduction of spacers such as graphene,CNTs,cellulose and the like demonstrates limited enhancement in rate capability.The combination of currently reported pseudocapacitive materials and MXene tends to express the potential capacitance of pseudocapacitive materials rather than MXene,leading to low volumetric capacitance.Therefore,it is necessary to exploit more ideal candidate materials to couple with MXene for fully expressing both potentials.Herein,for the first time,high electrochemically active materials of ultrathin MoO3 nanobelts are intercalated into MXene films.In the composites,MoO3 nanobelts not only act as pillaring components to prevent restacking of MXene nanosheets for fully expressing the MXene pseudocapacitance in acidic environment but also provide considerable pseudocapacitive contribution.As a result,the optimal M/MoO3 electrode not only achieves a breakthrough in volumetric capacitance(1817 F cm-3 and 545 F g-1),but also maintains good rate capability and excellent flexibility.Moreover,the corresponding symmetric supercapacitor likewise shows a remarkable energy density of 44.6 Wh L-1(13.4 Wh kg-1),rendering the flexible electrode a promising candidate for application in high-energy-density energy storage devices.

Preparation of WO3 thin films by dip film-drawing for photoelectrochemical performance

Here we report the WO3 thin films on F-doped SnO2 conducting glass (FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple, convenient, economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3, 6, 9, 12 and 15 times for prepared different thicknesses of WO3 thin film photoanodes. Then the photoa no des were employed as the electrodes in photoelectrochemical property Keywords: WO3 thin films Dip film-drawing Photoelectrochemical Thicknesses Large-scale measurements, which include scan linear sweep, repeated on/off illumination cycles, electrochemical impedanee spectroscopy and incident phot on to current conversion efficiency, respectively. The results showed that the WO3 thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm^-2 at 1.23 V versus RHE.

High-performance omnidirectional self-powered photodetector constructed by CsSnBr_(3)/ITO heterostructure film

Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.

0.9BaTiO_(3)-0.1Bi(Mg_(1/2)Ti_(1/2))O_(3)铁电薄膜制备及储能特性

电介质薄膜是通过介质极化方式存储静电能的一种材料,以其高功率密度和高充放电效率,在电子器件领域得到广泛应用。目前,储能密度较低和温度稳定性差仍是电介质储能薄膜的缺陷。本研究采用溶胶-凝胶法在Pt/Ti/SiO_(2)/Si衬底上制备了0.9BaTiO_(3)-0.1Bi(Ti_(1/2)Mg_(1/2))O_(3)(0.9BT-0.1BMT)薄膜,通过引入BMT期望获得高储能密度及宽温度稳定性,并研究了退火温度对薄膜的相组成和微观形貌的影响。研究结果表明,退火温度过高会导致薄膜的致密性明显降低并伴随晶粒尺寸增大,750℃是最佳的退火温度。综合性能研究发现,1 kHz下,薄膜的室温介电常数为399,介电损耗为5.8%。薄膜在各测试频率下的介电温度稳定性满足X9R标准,ΔC/C25℃≤±13.9%。通过Currie-Weiss关系计算得到薄膜的弛豫系数(Relaxor value)γ值为≈1.96,说明其具有明显的弛豫特性。储能特性研究显示,薄膜的室温储能密度Wrec达51.9 J/cm^(3),室温~200℃的宽温度范围内,储能密度Wrec>20 J/cm^(3),可释放能量效率η>65%(1600 kV/cm)。在脉冲放电测试中,薄膜的脉冲放电时间τ0.9保持在15μs以内,且具有优异的频率、温度和循环可靠性。本研究所制备的0.9BT-0.1BMT铁电薄膜具有出色的储能特性和宽温度稳定性,具备在高温环境中应用的潜力。

预氧化处理对MP35N合金高温氧化行为的影响

目的 探索并优化合金成分、工艺以获得致密稳定的预氧化膜,提高合金抗氧化能力。方法 利用非自耗真空电弧炉熔炼合金,在真空容器中加热金属及其氧化物粉末获得平衡氧压。通过莱茵装置进行预氧化实验。通过FactSage计算Co-Ni-Cr-Mo-Al-Si体系的合金组织相图及其氧化相图,利用X射线衍射(XRD)和扫描电子显微镜对预氧化的试样进行物相分析。结果 在1000℃、10^(–17)atm氧压下预氧化,未含Si的MP35N合金表面出现Cr_(2)O_(3)氧化物;随着Si添加量的增加,表面氧化物变为(Al,Cr)_(2)O_(3),以Cr_(2)O_(3)为主,内氧化物为Al_(2)O_(3);当Si含量(质量分数)为3%时,内部形成了近乎连续的带状Al_(2)O_(3)氧化膜。在1 000℃、10^(–25) atm氧压下,合金表面形成连续的Al_(2)O_(3)膜;在1 000℃、10^(–17) atm氧压下,Co-Ni-20Cr-10Mo-4Al-1Si合金预氧化后的外氧化膜为Cr_(2)O_(3),内氧化物为Al_(2)O_(3);随着氧压的提高,在空气气氛下合金表面生成尖晶石相氧化物。在1 000℃、10^(–17)atm氧压下预氧化1、5、10h,Co-Ni-20Cr-10Mo-4Al-1Si合金表面外氧化膜为Cr_(2)O_(3),内氧化物为Al_(2)O_(3),随着时间延长至20 h,合金表面形成连续的Al_(2)O_(3)膜。结论 随着Si添加量的增加,Al元素的活度不断升高,从而提高了Al_(2)O_(3)的形成驱动力,提升了Al元素的扩散系数,有更多的Al元素扩散至合金表层,有利于Al元素的选择性氧化。预氧化氧压的降低和氧化时间的延长,有利于保护性外氧化Al_(2)O_(3)膜形成,可有效提高合金的抗高温氧化性能。