This paper proposes a zer o current and zero voltage switching (ZCZVS) PWM Boost full bridge (FB) conve rter. With series inductors, the leading switches can realize zero current swit ching (ZCS) in a wide load ra...This paper proposes a zer o current and zero voltage switching (ZCZVS) PWM Boost full bridge (FB) conve rter. With series inductors, the leading switches can realize zero current swit ching (ZCS) in a wide load range using the energy of the output capacitor. Ma king use of parasitic capacitors of the lagging switches and parallel auxiliary i nductance with the primary winding of the transformer, the lagging switches can realize zero voltage switching (ZVS) under any load. Compared with the ZCS PWM Boost FB converter, the new converter has no current duty cycle loss. Operat ional principle and parameter design are analyzed. Experimental results verify the effectiveness of the proposed converter.展开更多
Resonant tunneling diode （RTD） of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 ： 1 at roo...Resonant tunneling diode （RTD） of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 ： 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510（C） network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.展开更多
The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are uns...The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during operation.In this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfO_(x)/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10^(-11) A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfO_(x) tunneling barrier.By stacking a bilayer selector with NiO_(x)based resistive random-access memory,the leakage and programming currents of the device could be significantly decreased.For the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed structure.The maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfO_(x)/Pt/Ti/NiO_(x)/Pt structure was 5.29×10^(14)(N^(2),N=2.3×10^(7)).展开更多
Abnormal voltages such as electrostatic,constant current,and strong electromagnetic signals can erroneously trigger operation of MEMS pyrotechnics and control systems in a fuze,which may result in casualties.This stud...Abnormal voltages such as electrostatic,constant current,and strong electromagnetic signals can erroneously trigger operation of MEMS pyrotechnics and control systems in a fuze,which may result in casualties.This study designs a solid-state micro-scale switch by combining the corona gas discharge theory of asymmetric electric fields and Peek’s Law.The MEMS switch can be transferred from“off”to“on”through the gas breakdown between the corona electrodes.In the model,one of the two electrodes is spherical and the other flat,so a non-uniform electric field is formed around the electrodes.The theoretical work is as follows.First,the relation among the radius of curvature of the spherical electrode,the discharge gap,and the air breakdown voltage is obtained;to meet the low voltage(30-60 V)required to drive the MEMS switch,the radius of curvature of the spherical electrode needs to be 10 e50 mm and the discharge gap between the two electrodes needs to be 9e11 mm.Second,the optimal ratioεis introduced to parameterize the model.Finally,the corona discharge structural parameters are determined by comparing the theoretical and electric field simulation results.The switch is then fabricated via MEMS processing.A hardware test platform is built and the performing chip tested.It is found that when the electrode gap is 9 mm,the electrostatic voltage is at least 37.3 V,with an error of 2.6%between the actual and theoretical air breakdown voltages.When the electrode gap is 11 mm,the electrostatic voltage is at least 42.3 V,with an error of 10.5%between the actual and theoretical air breakdown voltages.Both cases meet the design requirements.展开更多
24 September 2013, Shenzhen--ZTE today announced the release of the BigMatrix 9900 series of data center switches, the world＇ s largest-capacity data center switches. The BigMatrix 9900 product family comprises data...24 September 2013, Shenzhen--ZTE today announced the release of the BigMatrix 9900 series of data center switches, the world＇ s largest-capacity data center switches. The BigMatrix 9900 product family comprises data switches with the largest capacity in the world. The switches are designed large cloud computing and big data scenarios and allow for higher-density deployment in data centers. Each single slot can support up to 144 10G ports, 36 40G ports, or 12 IOOG ports. The Big Matrix 9900 series comprises four switch models-9916, 9912, 9908, and 9904-each of which supports a maximum switching capacity of 84.48 Tbps.展开更多
Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit a...Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit analysis in addition to algebraic methods, it is clearly possible in theory to carry out an analysis of the whole switched circuit in two-phase switching exclusively by the graph method as well. For this purpose it is possible to plot a Mason graph of a circuit, use transformation graphs to reduce Mason graphs for all the four phases of switching, and then plot a summary graph from the transformed graphs obtained this way. First the author draws nodes and possible branches, obtained by transformation graphs for transfers of EE （even-even） and OO （odd-odd） phases. In the next step, branches obtained by transformation graphs for EO and OE phase are drawn between these nodes, while their resulting transfer is 1 multiplied by z^1/2. This summary graph is extended by two branches from input node and to output node, the extended graph can then be interpreted by the Mason＇s relation to provide transparent current transfers. Therefore it is not necessary to compose a sum admittance matrix and to express this consequently in numbers, and so it is possible to reach the final result in a graphical way.展开更多
In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T D...In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.展开更多
文摘This paper proposes a zer o current and zero voltage switching (ZCZVS) PWM Boost full bridge (FB) conve rter. With series inductors, the leading switches can realize zero current swit ching (ZCS) in a wide load range using the energy of the output capacitor. Ma king use of parasitic capacitors of the lagging switches and parallel auxiliary i nductance with the primary winding of the transformer, the lagging switches can realize zero voltage switching (ZVS) under any load. Compared with the ZCS PWM Boost FB converter, the new converter has no current duty cycle loss. Operat ional principle and parameter design are analyzed. Experimental results verify the effectiveness of the proposed converter.
基金SUPPORTED BY NATIONAL NATURAL SCIENCE FOUNDATION OF CHINA( NO. 60177010).
文摘Resonant tunneling diode （RTD） of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 ： 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510（C） network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.
基金financially supported by the National Research Foundation of Korea (NRF)(No.2016R1A3B1908249)。
文摘The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during operation.In this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfO_(x)/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10^(-11) A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfO_(x) tunneling barrier.By stacking a bilayer selector with NiO_(x)based resistive random-access memory,the leakage and programming currents of the device could be significantly decreased.For the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed structure.The maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfO_(x)/Pt/Ti/NiO_(x)/Pt structure was 5.29×10^(14)(N^(2),N=2.3×10^(7)).
文摘Abnormal voltages such as electrostatic,constant current,and strong electromagnetic signals can erroneously trigger operation of MEMS pyrotechnics and control systems in a fuze,which may result in casualties.This study designs a solid-state micro-scale switch by combining the corona gas discharge theory of asymmetric electric fields and Peek’s Law.The MEMS switch can be transferred from“off”to“on”through the gas breakdown between the corona electrodes.In the model,one of the two electrodes is spherical and the other flat,so a non-uniform electric field is formed around the electrodes.The theoretical work is as follows.First,the relation among the radius of curvature of the spherical electrode,the discharge gap,and the air breakdown voltage is obtained;to meet the low voltage(30-60 V)required to drive the MEMS switch,the radius of curvature of the spherical electrode needs to be 10 e50 mm and the discharge gap between the two electrodes needs to be 9e11 mm.Second,the optimal ratioεis introduced to parameterize the model.Finally,the corona discharge structural parameters are determined by comparing the theoretical and electric field simulation results.The switch is then fabricated via MEMS processing.A hardware test platform is built and the performing chip tested.It is found that when the electrode gap is 9 mm,the electrostatic voltage is at least 37.3 V,with an error of 2.6%between the actual and theoretical air breakdown voltages.When the electrode gap is 11 mm,the electrostatic voltage is at least 42.3 V,with an error of 10.5%between the actual and theoretical air breakdown voltages.Both cases meet the design requirements.
文摘24 September 2013, Shenzhen--ZTE today announced the release of the BigMatrix 9900 series of data center switches, the world＇ s largest-capacity data center switches. The BigMatrix 9900 product family comprises data switches with the largest capacity in the world. The switches are designed large cloud computing and big data scenarios and allow for higher-density deployment in data centers. Each single slot can support up to 144 10G ports, 36 40G ports, or 12 IOOG ports. The Big Matrix 9900 series comprises four switch models-9916, 9912, 9908, and 9904-each of which supports a maximum switching capacity of 84.48 Tbps.
文摘Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit analysis in addition to algebraic methods, it is clearly possible in theory to carry out an analysis of the whole switched circuit in two-phase switching exclusively by the graph method as well. For this purpose it is possible to plot a Mason graph of a circuit, use transformation graphs to reduce Mason graphs for all the four phases of switching, and then plot a summary graph from the transformed graphs obtained this way. First the author draws nodes and possible branches, obtained by transformation graphs for transfers of EE （even-even） and OO （odd-odd） phases. In the next step, branches obtained by transformation graphs for EO and OE phase are drawn between these nodes, while their resulting transfer is 1 multiplied by z^1/2. This summary graph is extended by two branches from input node and to output node, the extended graph can then be interpreted by the Mason＇s relation to provide transparent current transfers. Therefore it is not necessary to compose a sum admittance matrix and to express this consequently in numbers, and so it is possible to reach the final result in a graphical way.
文摘In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.
