Impact of Band-Engineering to Performance of High-k Multilayer Based Charge Trapping Memory

Impact of band-engineering to the performance of charge trapping memory with HfO2/Ta2O5/HfO2 （HTH） as the charge trapping layer is investigated. Compared with devices with the same total HfO2 thickness, structures with Ta2O5 closer to substrates show larger program/erase window, because the 2nd HfO2 （next to blocking oxide） serving as part of blocking oxide reduces the current tunneling out of/in the charge trapping layer during program and erase. Moreover, trapped charge centroid is modulated and contributed more to the fiat-band voltage shift. Further experiments prove that devices with a thicker 2nd HfO2 layer exhibit larger saturate fiat-band shift in both program and erase operation. The optimized device achieves a 7 V memory window and good reliability characteristics.

Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor-Based on Chaotic Oscillator:A Quantum Simulation Study

We evaluate the impact of temperature on the output behavior of a carbon nanotube field effect transistor （CNFET） based chaotic generator. The sources cause the variations in both current-voltage characteristics of the CNFET device and an overall chaotic circuit is pointed out. To verify the effect of temperature variation on the output dynamics of the chaotic circuit, a simulation is performed by employing the CNFET compact model of Wong et al. in HSPICE with a temperature range from -100℃ to 100℃. The obtained results with time series, frequency spectra, and bifurcation diagram from the simulation demonstrate that temperature plays a significant role in the output dynamics of the CNFET-based chaotic circuit. Thus, temperature-related issues should be taken into account while designing a high-quality chaotic generator with high stability.

Performance of large-diameter pneumatic down-the-hole (DTH) hammers: A focus on influences of the hammer structure

Pneumatic down-the-hole (DTH) hammer has been extensively used in air drillings through hard and ultra-hard geological formations. Numerical modeling can offer close observation on the working behaviors by visualizing internal pressure status as well as provide reliable performance predictions for large-diameter DTH hammers to which conventional empirical and experimental approaches cannot be applied. In this study, CFD simulations coupled with dynamic meshing are utilized to simulate the air flow and piston movement inside the large-diameter DTH hammers. The numerical modeling scheme is verified against a theoretical model published in literature. Effects of structural parameters on hammer performance, including piston mass, piston upper-end diameter, piston groove diameter, and lengths of intake and exhaust stroke in both front and rear chambers, are analyzed in detail by virtue of sets of numerical simulations. The simulations suggest that changing the intake stroke of front chamber has a negligible influence on hammer performance while increasing the piston groove would lower all the four indicators of hammer performance, including impact energy, impact frequency, maximum stroke, and air consumption rate. Changing the other structural parameters demonstrates mixed effects on the performance indicators. Based on the numerical simulations, a large GQ-400 DTH hammer has been designed for reduced air consumption rate and tested in a field drilling practice. The air drilling test with the designed hammer provided a penetration rate 1.7 times faster than that of conventional mud drilling.

Impact of Arsenic Related Defects on Electronic Performance of ZrO2/GaAs:Density Functional Theory Calculations

Arsenic can diffuse into high-κ dielectrics during OaAs-based metal oxide semiconductor transistor process, which causes the degradation of gate dielectrics. To explore the origins of the degradation, we employ nonlocal B3LYP hybrid functional to study arsenic related defects in ZrO2. Via band alignments between the OaAs and ZrO2, we are able to determine the defect formation energy in the GaAs relative to the ZrO2 band gap and assess how they will affect the device performance. Arsenic at the interstitial site serves as a source of positive fixed charge while at the oxygen or zirconium substitutional site changes its charge state within the band gap of GaAs. Moreover, it is found that arsenic related defects produce conduction band offset reduction and gap states, which will increase the gate leakage current.

Experimental and Numerical Investigation on Impact Performance of Carbon Reinforced Aluminum Laminates

It is known that fiber metal laminates （FML） as one of hybrid materials with thin metal sheets and fiber/epoxy layers have the characteristics of the excellent damage tolerance, fatigue and impact properties with a relatively low density. Therefore, the mechanical components using FML can contribute the enhanced safety level of the sound construction toward the whole body. In this study, the impact performance of carbon reinforced aluminum laminates （CARAL） is investigated by experiments and numerical simulations. Drop weight tests are carried out with the weight of 4.7 kg at the speed of 1 and 2 m/s, respectively. Dynamic non-linear transient analyses are also accomplished using a finite element analysis software, ABAQUS. The experiment results and numerical results are compared with impact load-time histories. Also, energy-time histories are applied to investigate the impact performance of CARAL.

The Impact of Investing in Emerging Markets on Firm Performance: An Exploratory Study of Taiwan Residents Multinational Enterprises in the Chinese Mainland

Ⅰ.IntroductionDuring the past two decades,many multinationalenterprises(MNEs)have made substantial investmentsin emerging markets.Two factors dominate thereasoning in favor of such an investment strategy:lowlabor costs and the large size of the markets in the hostcountries.While these two economic factors seem quite

Performance Evaluation of Different Data Value Prediction Schemes

Data value prediction has been widely accepted as an effective mechanism to break data hazards for high performance processor design. Several works have reported promising performance potential. However, there is hardly enough information that is presented in a clear way about performance comparison of these prediction mechanisms. This paper investigates the performance impact of four previously proposed value predictors, namely last value predictor, stride value predictor, two-level value predictor and hybrid （stride-t-two-level） predictor. The impact of misprediction penalty, which has been frequently ignored, is discussed in detail. Several other implementation issues, including instruction window size, issue width and branch predictor are also addressed and simulated. Simulation results indicate that data value predictors act differently under different configurations. In some cases, simpler schemes may be more beneficial than complicated ones. In some particular cases, value prediction may have negative impact on performance.