Performance of a Phase Change Material Battery in a Transparent Building

This research evaluates the performance of a Phase Change Material(PCM)battery integrated into the climate system of a new transparent meeting center.The main research questions are:a.“Can the performance of the battery be calculated?”and b.“Can the battery reduce the heating and cooling energy demand in a significant way?”The first question is answered in this document.In order to be able to answer the second question,especially the way the heat loading in winter should be improved,then more research is necessary.In addition to the thermal battery,which consists of Phase Change Material plates,the climate system has a cross-flow heat exchanger and a heat pump.The battery should play a central role in closing the thermal balance of the lightweight building,which can be loaded with hot return or cold outdoor air.The temperature of the battery plates is monitored by multi-sensors and simulated by the use of PHOENICS(Computational Fluid Dynamics)and MATLAB.This paper reports reasonable agreement between the numerical predictions and the measurements,with a maximum variance of 10%.The current coefficient of performance for heating and cooling is already high,more than 27.There is scope for increasing this much further by making use of the very low-pressure difference of the battery(below 25 Pascal),low pressure fans and the ventilation system as a whole.

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.

Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling

An optimized device structure for reducing the RESET current of phase-change random access memory （PCRAM） with blade-type like （BTL） phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation. The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller, and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface. The results indicate that the BTL cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the RESET current from 0.67mA to 0.32mA. Therefore, the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.

Unconventional phase transition of phase-change-memory materials for optical data storage

Recent years, optically controlled phase-change memory draws intensive attention owing to some advanced applications including integrated all-optical nonvolatile memory, in-memory computing, and neuromorphic computing. The light-induced phase transition is the key for this technology. Traditional understanding on the role of light is the heating effect. Generally, the RESET operation of phase-change memory is believed to be a melt-quenching-amorphization process. However, some recent experimental and theoretical investigations have revealed that ultrafast laser can manipulate the structures of phase-change materials by non-thermal effects and induces unconventional phase transitions including solid-to-solid amorphization and order-to-order phase transitions. Compared with the conventional thermal amorphization,these transitions have potential superiors such as faster speed, better endurance, and low power consumption. This article summarizes some recent progress of experimental observations and theoretical analyses on these unconventional phase transitions. The discussions mainly focus on the physical mechanism at atomic scale to provide guidance to control the phase transitions for optical storage. Outlook on some possible applications of the non-thermal phase transition is also presented to develop new types of devices.

Improving the data retention of phase change memory by using a doping element in selected Ge_2Sb_2Te_5

The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed in this paper, the crystallization region under SET current pulse presents first on the corner of the bottom electron contact(BEC) and then promptly forms a filament shunting down the amorphous phase to achieve the low-resistance state, whereas the tiny disturb current pulse accelerates crystallization at the axis of symmetry in the phase change material. According to the different crystallization paths, a new structure of phase change material layer is proposed to improve the data retention for PCM without impeding SET operation.This structure only requires one or two additional process steps to dope nitrogen element in the center region of phase change material layer to increase the crystallization temperature in this confined region. The electrical-thermal characteristics of PCM cells with incremental doped radius have been analyzed and the best performance is presented when the doped radius is equal to the radius of the BEC.

Threshold switching uniformity in In_2Se_3 nanowire-based phase change memory

The uniformity of threshold voltage and threshold current in the In2 Se3 nanowire-based phase change memory （PCM） devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.

Thermal effect of Ge_2Sb_2Te_5 in phase change memory device

In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of GezSb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric （IMD） deposition process can ease the thermal impact of line-GST PRAM cell.

Current Controlled Relaxation Oscillations in Ge_2Sb_2Te_5-Based Phase Change Memory Devices

The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.

Cellular automata modelling of phase-change memories

A novel approach to modelling phase-transition processes in phase change materials used for optical and electrical data storage applications is presented. The model is based on a cellular automaton （CA） approach to predict crystallization behaviour that is linked to thermal and electrical simulations to enable the study of the data writing and erasing processes. The CA approach is shown to be able to predict the evolution of the microstructure during the rapid heating and cooling cycles pertinent to data storage technology, and maps crystallization behaviour on the nanoscale. A simple example based on possible future nonvolatile phase-change random access solid-state memory is presented.

A review of compact modeling for phase change memory

Phase change memory(PCM)attracts wide attention for the memory-centric computing and neuromorphic comput-ing.For circuit and system designs,PCM compact models are mandatory and their status are reviewed in this work.Macro mod-els and physics-based models have been proposed in different stages of the PCM technology developments.Compact model-ing of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical,thermal and phase transition dynamics as well as their interactions.Realizations of the PCM operations including threshold switching,set and reset programming in these models are diverse,which also differs from the perspective of circuit simulations.For the purpose of efficient and reliable designs of the PCM technology,open issues and challenges of the compact modeling are also discussed.

Crystallization Process of Superlattice-Like Sb/SiO_2 Thin Films for Phase Change Memory Application

After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data retention ability（189°C for 10 y）. The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb（3 nm）/SiO_2（7 nm）-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb（3 nm）/SiO_2（7 nm） thin film shows a low thermal conductivity of 0.13 W/（m·K）.

Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays

A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.

Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.

Scaling properties of phase-change line memory

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

Role of Composite Phase Change Material on the Thermal Performance of a Latent Heat Storage System: Experimental Investigation

Paraffin wax is a perfect phase change material(PCM)that can be used in latent heat storage units(LHSUs).The utilization of such LHSU is restricted by the poor conductivity of PCM.In the present work,a metal foam made of aluminium with PCM was used to produce a composite PCM as a thermal conductivity technique in PCM⁃LHSU and water was used as heat transfer fluid(HTF).An experimental investigation was carried out to evaluate the heat transfer characteristics of LHSU using pure PCM and composite PCM.The study included time⁃dependent visualization of the PCM during the melting and solidification processes.Besides,a thermocouple network was placed inside the heat storage to record the temperature profile during each process.Results showed that better performance could be obtained using composite PCM⁃LHSU for both melting and solidification processes.The melting time of composite PCM⁃LHSU was about 83%faster than that of a simple PCM⁃LHSU,and the percentage decreasing in the solidification time was about 85%due to the provision of metal foam.

Parametric Study on Phase Change Material Based Thermal Energy Storage System

The usage of phase change materials (PCM) to store the heat in the form of latent heat is increased, because large quantity of thermal energy is stored in smaller volumes. In the present experimental investigation, sodium thiosulphate pentahydrate is employed as phase change material and it is stored in stainless steel capsules. These capsules are kept in fabricated tank and hot water is supplied into it. The experimental design is prepared by considering the parameters: flow rate, heat transfer fluid inlet temperature and PCM capsule shape. Experiments are conducted according to the experimental design and responses are recorded. The effect of selected parameters on TES using PCM is studied by analyzing experimental data. The experimental data are also analyzed using Fuzzy Logic to find the optimal values of flow rate, heat transfer fluid inlet temperature and PCM capsule shapes. The present work utilizes Fuzzy Logic to find the optimal parameters for designing the effective Thermal Energy Storage System (TES).

Heat transfer and parametric studies of an encapsulated phase change material based cool thermal energy storage system

This work investigates the transient behaviour of a phase change material based cool thermal energy storage (CTES) system comprised of a cylindrical storage tank filled with encapsulated phase change materials (PCMs) in spherical container integrated with an ethylene glycol chiller plant. A simulation program was developed to evaluate the temperature histories of the heat transfer fluid (HTF) and the phase change material at any axial location during the charging period. The results of the model were validated by comparison with experimental results of temperature profiles of HTF and PCM. The model was also used to investigate the effect of porosity, Stanton number, Stefan number and Peclet number on CTES system performance. The results showed that increase in porosity contributes to a higher rate of energy storage. However, for a given geometry and heat transfer coefficient, the mass of PCM charged in the unit decreases as the increase in porosity. The St number as well as the Ste number is also influential in the performance of the unit. The model is a convenient and more suitable method to determine the heat transfer characteristics of CTES system. The results reported are much useful for designing CTES system.

Green's function solution for transient heat conduction in annular fin during solidification of phase change material

The Green＇s function method is applied for the transient temperature of an annular fin when a phase change material （PCM） solidifies on it. The solidification of the PCMs takes place in a cylindrical shell storage. The thickness of the solid PCM on the fin varies with time and is obtained by the Megerlin method. The models are found with the Bessel equation to form an analytical solution. Three different kinds of boundary conditions are investigated. The comparison between analytical and numerical solutions is given. The results demonstrate that the significant accuracy is obtained for the temperature distribution for the fin in all cases.

Optimum Distribution of Two Different Phase Change Materials between Various Components of Roof Air-Conditioned Room, Suitable to Reduce Annual Energy Consumption

Obviously, the outside annual climate change caused either by a major solar input during the hottest period or by a temperature drop during the coldest period leads to discomfort in inside buildings. This effect can be reduced by storing heat transmitted in phase change materials (PCM) as latent heat, in order to ensure a good situation of thermal comfort during all months of the year. In this work, thermal behavior of two roofing systems is studied. One roof is constituted only by usual materials in building. In the other, two phase change materials (PCM) are introduced according to three configurations. Study is interested to assess incorporation effect of two PCMs within the roof and to evaluate the optimum locations to reduce the energy consumption of air-conditioned room. Mono-dimensional numerical model validated analytically and experimentally, is used to carry out a parametric analyzes to determine characteristics of the layers in which the roofs are formed regardless of external climate effect. Numerical calculations are performed for three configurations of roof. Results show that insertion of phase change materials in roof provides best energy consumption saving regardless annual climate change. Generally, the three configurations lead to different results, depending on the combination of PCMs. This difference becomes less important when selection of PCMs take account the thermal comfort level and temperatures of hottest and coldest periods.

Time-Temperature Charge Function of a High Dynamic Thermal Heat Storage with Phase Change Material

A thermal heat storage system with an energy content of 40 kWh and a temperature of 58°C will be presented. This storage system is suitable for supporting the use of renewable energies in buildings and for absorbing solar heat, heat from co-generation and heat pumps or electric heat from excess wind and solar power. The storage system is equipped with a plate heat exchanger that is so powerful that even with small temperature differences between the flow temperature and the storage temperature a high load dynamic is achieved. The storage system has a performance of 2.8 kW at 4 K and 10.6 kW at a temperature difference of 10 K. Thus, large performance variations in solar thermal systems or CHP plants can be buffered very well. Further a storage charge function Q(T, t) will be presented to characterize the performance of the storage.