2-(pyridine-2-yl)-N-p-chlorohydrazinecarbothioamide (HCPTS) was synthesized, characterized and successfully applied for the preconcentration of Cu(II), Ni(II), Zn(II), Cd(II), Co(II), Pb(II), Fe(II), and Hg(II) in wat...2-(pyridine-2-yl)-N-p-chlorohydrazinecarbothioamide (HCPTS) was synthesized, characterized and successfully applied for the preconcentration of Cu(II), Ni(II), Zn(II), Cd(II), Co(II), Pb(II), Fe(II), and Hg(II) in water, blood, and urine samples prior to graphite furnace atomic absorption determination (GFAAS);Hg was determined by cold vapor technique. Under the optimum experimental conditions (i.e. pH = 8, 10–4 M of HCPTS, 0.05% w/v of Triton X-114), calibration graphs were linear in the range of 0.02 to 200 ng?mL–1 for Co(II), Cd(II), Pb(II) and Ni(II);0.03 to 200 ng?mL–1 for Cu(II);0.07 to 200 ng?mL–1 for Fe(II) and Zn(II) and 0.02 to 150 ng?mL–1 for Hg(II). The enrichment factors were 43, 51, 41, 46, 54, 40, 45 and 52 for Cu(II), Ni(II),Zn (II), Cd(II), Co(II), Pb(II), Fe(II), and Hg(II), respectively. The limit of detection were found to be 0.019, 0.094, 0.0514, 0.052, 0.0165, 0.047, 0.068 and 0.041 ng?mL–1 for Cu(II), Ni(II), Zn(II), Cd(II), Co(II), Pb(II), Fe(II), and Hg(II), respectively. The developed method was applied to the determination of these metal ions in water, blood and urine samples with satisfactory results.展开更多
The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First...The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.展开更多
文摘2-(pyridine-2-yl)-N-p-chlorohydrazinecarbothioamide (HCPTS) was synthesized, characterized and successfully applied for the preconcentration of Cu(II), Ni(II), Zn(II), Cd(II), Co(II), Pb(II), Fe(II), and Hg(II) in water, blood, and urine samples prior to graphite furnace atomic absorption determination (GFAAS);Hg was determined by cold vapor technique. Under the optimum experimental conditions (i.e. pH = 8, 10–4 M of HCPTS, 0.05% w/v of Triton X-114), calibration graphs were linear in the range of 0.02 to 200 ng?mL–1 for Co(II), Cd(II), Pb(II) and Ni(II);0.03 to 200 ng?mL–1 for Cu(II);0.07 to 200 ng?mL–1 for Fe(II) and Zn(II) and 0.02 to 150 ng?mL–1 for Hg(II). The enrichment factors were 43, 51, 41, 46, 54, 40, 45 and 52 for Cu(II), Ni(II),Zn (II), Cd(II), Co(II), Pb(II), Fe(II), and Hg(II), respectively. The limit of detection were found to be 0.019, 0.094, 0.0514, 0.052, 0.0165, 0.047, 0.068 and 0.041 ng?mL–1 for Cu(II), Ni(II), Zn(II), Cd(II), Co(II), Pb(II), Fe(II), and Hg(II), respectively. The developed method was applied to the determination of these metal ions in water, blood and urine samples with satisfactory results.
基金Project(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProject(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China+1 种基金Projects(K5051225014,K5051225004)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
