Flexible electronics have been recently paid much attention. A flexible substrate (Organic resin film) is indispensable component for flexible devices. Though PET film is low-cost organic film, low heat-resistance of ...Flexible electronics have been recently paid much attention. A flexible substrate (Organic resin film) is indispensable component for flexible devices. Though PET film is low-cost organic film, low heat-resistance of PET film limits its application as a flexible device substrate. We have developed heat-resistant PET which does not deteriorate even at 190°C heat treatment for one hour. An excimer light was irradiated onto a polysi-lazane (PHPS: perhydropolysilane)-coated film to form a dense silicon-dioxide (SiO2) layer on a PET film, and the heat-resistance property of the formed film was examined. Changes of surface state and cross-sectional structure of the formed film due to heat treatment were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). Compared to normal PET, which is deteriorated and whitened by heat treatment of about 110°C - 120°C, the SiO2-coated PET film maintains transparency and does not deteriorate after heat treatment at 180°C - 190°C for one hour. This high heat resistance is due to a dense SiO2 film formed on the surface that prevents surface precipitation and crystallization of low-molecular-weight oligomers (which are the cause of thermal degradation of PET). It is expected that enhancing the heat resistance of PET—which has high versatility and low cost—to about 180°C to 190°C will allow SiO2-film-coated PET to be developed as a film substrate for flexible devices.展开更多
在薄膜晶体管(Thin film transistor,TFT)的公共电极制程中,有部分TFT样品的漏电流(I_(off))异常偏高,该部分样品经历同一个光刻胶剥离设备,导致该设备暂停流片,造成产能损失。明确该剥离设备造成TFT漏电流偏高的原因并予以解决,对产能...在薄膜晶体管(Thin film transistor,TFT)的公共电极制程中,有部分TFT样品的漏电流(I_(off))异常偏高,该部分样品经历同一个光刻胶剥离设备,导致该设备暂停流片,造成产能损失。明确该剥离设备造成TFT漏电流偏高的原因并予以解决,对产能和品质确保具有积极意义。本文首先收集了异常设备剥离液和正常设备的剥离液并分析成分,发现异常设备的剥离液中Al离子含量高。其次,发现TFT的I_(off)会随着在异常设备流片次数的增加而上升。其原因是Al离子在剥离制程生成Al_(2)O_(3)颗粒,该颗粒附着在TFT器件钝化层上形成寄生栅极效应,最终造成I_(off)增加。最后,结合TRIZ输出解决方案,并优选方案进行改善验证。实验结果表明,剥离液中的Al离子浓度由1×10^(-8)上升到2.189×10^(-6)时,I_(off)由3.56 pA上升到7.56 pA。当剥离液中含有Al离子,经历的剥离次数增加时,I_(off)呈上升趋势。钝化层成膜前的等离子体处理功率增强、钝化层膜厚增加可以抑制I_(off)增加。由此,可以确定剥离设备造成I_(off)偏高的原因是剥离液中的Al离子形成的寄生栅极效应,钝化层成膜前处理强化和膜厚增加均可以抑制该效应。展开更多
Patterning technology of ferrite and insulating material in multilayer ceramic devices is proposed. In the conventional technology, the different ceramic materials such as the ferrite and the insulating material have ...Patterning technology of ferrite and insulating material in multilayer ceramic devices is proposed. In the conventional technology, the different ceramic materials such as the ferrite and the insulating material have been prepared in the form of the each different green sheet, and then they have been stacked each other. Otherwise the different material has filled cavities that were formed by a mechanical punching in advanced. In our proposing technology, arbitrary patterning of the different ceramic material inside the same green sheet is possible. In this process, the arbitrary shape of the through pattern is formed in the green sheet of the base material by making use of photo resist films as sacrifice patterns, and then the base material is masked by the patterned photo resist film. After filling the slurry of the different material into the through pattern of the base material passing the resist mask, the pattern of the different ceramic material in the green sheet is achieved. In the present paper, the ferrite magnetic material and the alumina-glass composite material are used. The patterned structure inside the green sheet is obtained. The slurry preparation, the thickness of the mask resist film, and the obtained structure of the green sheet are discussed.展开更多
文摘Flexible electronics have been recently paid much attention. A flexible substrate (Organic resin film) is indispensable component for flexible devices. Though PET film is low-cost organic film, low heat-resistance of PET film limits its application as a flexible device substrate. We have developed heat-resistant PET which does not deteriorate even at 190°C heat treatment for one hour. An excimer light was irradiated onto a polysi-lazane (PHPS: perhydropolysilane)-coated film to form a dense silicon-dioxide (SiO2) layer on a PET film, and the heat-resistance property of the formed film was examined. Changes of surface state and cross-sectional structure of the formed film due to heat treatment were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). Compared to normal PET, which is deteriorated and whitened by heat treatment of about 110°C - 120°C, the SiO2-coated PET film maintains transparency and does not deteriorate after heat treatment at 180°C - 190°C for one hour. This high heat resistance is due to a dense SiO2 film formed on the surface that prevents surface precipitation and crystallization of low-molecular-weight oligomers (which are the cause of thermal degradation of PET). It is expected that enhancing the heat resistance of PET—which has high versatility and low cost—to about 180°C to 190°C will allow SiO2-film-coated PET to be developed as a film substrate for flexible devices.
文摘在薄膜晶体管(Thin film transistor,TFT)的公共电极制程中,有部分TFT样品的漏电流(I_(off))异常偏高,该部分样品经历同一个光刻胶剥离设备,导致该设备暂停流片,造成产能损失。明确该剥离设备造成TFT漏电流偏高的原因并予以解决,对产能和品质确保具有积极意义。本文首先收集了异常设备剥离液和正常设备的剥离液并分析成分,发现异常设备的剥离液中Al离子含量高。其次,发现TFT的I_(off)会随着在异常设备流片次数的增加而上升。其原因是Al离子在剥离制程生成Al_(2)O_(3)颗粒,该颗粒附着在TFT器件钝化层上形成寄生栅极效应,最终造成I_(off)增加。最后,结合TRIZ输出解决方案,并优选方案进行改善验证。实验结果表明,剥离液中的Al离子浓度由1×10^(-8)上升到2.189×10^(-6)时,I_(off)由3.56 pA上升到7.56 pA。当剥离液中含有Al离子,经历的剥离次数增加时,I_(off)呈上升趋势。钝化层成膜前的等离子体处理功率增强、钝化层膜厚增加可以抑制I_(off)增加。由此,可以确定剥离设备造成I_(off)偏高的原因是剥离液中的Al离子形成的寄生栅极效应,钝化层成膜前处理强化和膜厚增加均可以抑制该效应。
文摘Patterning technology of ferrite and insulating material in multilayer ceramic devices is proposed. In the conventional technology, the different ceramic materials such as the ferrite and the insulating material have been prepared in the form of the each different green sheet, and then they have been stacked each other. Otherwise the different material has filled cavities that were formed by a mechanical punching in advanced. In our proposing technology, arbitrary patterning of the different ceramic material inside the same green sheet is possible. In this process, the arbitrary shape of the through pattern is formed in the green sheet of the base material by making use of photo resist films as sacrifice patterns, and then the base material is masked by the patterned photo resist film. After filling the slurry of the different material into the through pattern of the base material passing the resist mask, the pattern of the different ceramic material in the green sheet is achieved. In the present paper, the ferrite magnetic material and the alumina-glass composite material are used. The patterned structure inside the green sheet is obtained. The slurry preparation, the thickness of the mask resist film, and the obtained structure of the green sheet are discussed.
