Optoelectronic synaptic elements are emerging functional devices for the vigorous development of advanced neuromorphic computing technology in the post-Moore era.However,optoelectronic devices based on transition meta...Optoelectronic synaptic elements are emerging functional devices for the vigorous development of advanced neuromorphic computing technology in the post-Moore era.However,optoelectronic devices based on transition metal dichalcogenides(TMDs)are limited to their poor mobilities and weak light-matter interactions,which still hardly exhibit superior device performances in the application of artificial synapses.Here,we demonstrate the successful fabrication of Au nanoparticle-coupled MoS_(2)heterostructures via chemical vapor deposition(CVD),where the light absorption of MoS_(2)is greatly enhanced and engineered by plasmonic effects.Hot electrons are excited from Au nanoparticles,and then injected into MoS_(2)semiconductors under the light illumination.The plasmonically-engineered photo-gating effect at the metal-semiconductor junction is demonstrated to create optoelectronic devices with excellent synaptic behaviors,especially in ultra-sensitive excitatory postsynaptic current(EPSC,9.6×10^(-3)nA@3.4 nW·cm^(-2)),ultralow energy consumption(34.7 pJ),long-state retention time(>1,000 s),and tunable synaptic plasticity transitions.The material system of Au-nanoparticles coupled TMDs presents unique advantages for building artificial synapses,which may lead the future development of neuromorphic electronics in optical information sensing and learning.展开更多
基金We thank Prof.Feng Lin for his efforts on FDTD simulations.This work is supported by the National Natural Science Foundation of China(Nos.92163135,11904098,51972105,U19A2090,and 62090035)Hunan Provincial Natural Science Foundation of China(No.2019JJ30004)+1 种基金Key Program of the Hunan Provincial Science and Technology Department(Nos.2019XK2001 and 2020XK2001)This work is also supported by State Key Laboratory of Artificial Microstructure&Mesoscopic Physics.
文摘Optoelectronic synaptic elements are emerging functional devices for the vigorous development of advanced neuromorphic computing technology in the post-Moore era.However,optoelectronic devices based on transition metal dichalcogenides(TMDs)are limited to their poor mobilities and weak light-matter interactions,which still hardly exhibit superior device performances in the application of artificial synapses.Here,we demonstrate the successful fabrication of Au nanoparticle-coupled MoS_(2)heterostructures via chemical vapor deposition(CVD),where the light absorption of MoS_(2)is greatly enhanced and engineered by plasmonic effects.Hot electrons are excited from Au nanoparticles,and then injected into MoS_(2)semiconductors under the light illumination.The plasmonically-engineered photo-gating effect at the metal-semiconductor junction is demonstrated to create optoelectronic devices with excellent synaptic behaviors,especially in ultra-sensitive excitatory postsynaptic current(EPSC,9.6×10^(-3)nA@3.4 nW·cm^(-2)),ultralow energy consumption(34.7 pJ),long-state retention time(>1,000 s),and tunable synaptic plasticity transitions.The material system of Au-nanoparticles coupled TMDs presents unique advantages for building artificial synapses,which may lead the future development of neuromorphic electronics in optical information sensing and learning.
