Photo-Electric Microbe Sensor is a patented biotechnology that detects microbes in aqueous solution by measuring the change in photo-voltage in response to UV light stimulation of a platinum (Pt) disk surface on an el...Photo-Electric Microbe Sensor is a patented biotechnology that detects microbes in aqueous solution by measuring the change in photo-voltage in response to UV light stimulation of a platinum (Pt) disk surface on an electrode before and after immunoprecipitation of microbes. This study aimed to increase the sensitivity of microbe detection by pre-adsorbing recombinant Streptococcal Protein G (PG), to the Pt sensor surface. Streptococcal PG binds the Fc region of mammalian IgG molecules and we investigated the association of PG to Pt and the resulting ability to tether antibodies to the Pt-PG surface. An ELISA protocol was optimized to detect the presence of mouse monoclonal antibodies tethered to Pt immunoaffinity disks, and to determine the recommended blocking solution and reagent concentrations. Our results demonstrate that PG binds to bare Pt, increases IgG affinity to the Pt surface following Superblock Buffer application, and together offers design-options for Pt-based sensor technologies.展开更多
n-Si（111） surface tailed -C2H5, -C2H4COOH, -C2H2COOH were prepared by the reactions among Si-H to ethyl-Grignard, methyl acrylate and ethyl propionate, and the carboxyls were formed under the existence of trifluoroa...n-Si（111） surface tailed -C2H5, -C2H4COOH, -C2H2COOH were prepared by the reactions among Si-H to ethyl-Grignard, methyl acrylate and ethyl propionate, and the carboxyls were formed under the existence of trifluoroacetic acid. The composite n-Si（111） electrodes were obtained by depositing Pt nanodots and the photovoltaic characteristics for these electrodes were studied in I^-/I3^- redox electrolyte. The j-U （photo current density-potential） behaviors of photo-voltage and photocurrent densities to the electrodes under solar illumination varied regularly with groups of -C2H2COOH〉-C2H4COOH〉-H〉-C2H5. The photo-voltage and photocurrent density of the electrode tailed -C2 H2COOH were -0.641 V and 5.25 mA/cm^2, respectively, more negative than those of the non-conjugated modification.展开更多
The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the qual...The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source. An external electrical source is integrated in a solar cell system. The electronic carriers charge generated in the solar cell crossed mainly the junction with the great strength external electrical field. In open circuit, this crossing of the electronic charge carriers causes the thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the photo-voltage for different external electrical fields. The electric field causes the decrease of the photo-voltage mainly the open-circuit photo-voltage. The decrease of the photo-voltage translates the narrowing of the Space Charge Region (SCR). The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source. The increase of the electrical field causes rather the narrowing of the SCR. That can provide an improvement of the solar cell’s electrical outputs.展开更多
文摘Photo-Electric Microbe Sensor is a patented biotechnology that detects microbes in aqueous solution by measuring the change in photo-voltage in response to UV light stimulation of a platinum (Pt) disk surface on an electrode before and after immunoprecipitation of microbes. This study aimed to increase the sensitivity of microbe detection by pre-adsorbing recombinant Streptococcal Protein G (PG), to the Pt sensor surface. Streptococcal PG binds the Fc region of mammalian IgG molecules and we investigated the association of PG to Pt and the resulting ability to tether antibodies to the Pt-PG surface. An ELISA protocol was optimized to detect the presence of mouse monoclonal antibodies tethered to Pt immunoaffinity disks, and to determine the recommended blocking solution and reagent concentrations. Our results demonstrate that PG binds to bare Pt, increases IgG affinity to the Pt surface following Superblock Buffer application, and together offers design-options for Pt-based sensor technologies.
基金We are grateful to the Project of the National Natural Science Foundation of China(Grant No.50602004)the support from Chinese Education for Back Student Abroad and the fund for Young Teacher of BUCT(Project No.QN0512)for financial support.
文摘n-Si（111） surface tailed -C2H5, -C2H4COOH, -C2H2COOH were prepared by the reactions among Si-H to ethyl-Grignard, methyl acrylate and ethyl propionate, and the carboxyls were formed under the existence of trifluoroacetic acid. The composite n-Si（111） electrodes were obtained by depositing Pt nanodots and the photovoltaic characteristics for these electrodes were studied in I^-/I3^- redox electrolyte. The j-U （photo current density-potential） behaviors of photo-voltage and photocurrent densities to the electrodes under solar illumination varied regularly with groups of -C2H2COOH〉-C2H4COOH〉-H〉-C2H5. The photo-voltage and photocurrent density of the electrode tailed -C2 H2COOH were -0.641 V and 5.25 mA/cm^2, respectively, more negative than those of the non-conjugated modification.
文摘The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source. An external electrical source is integrated in a solar cell system. The electronic carriers charge generated in the solar cell crossed mainly the junction with the great strength external electrical field. In open circuit, this crossing of the electronic charge carriers causes the thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the photo-voltage for different external electrical fields. The electric field causes the decrease of the photo-voltage mainly the open-circuit photo-voltage. The decrease of the photo-voltage translates the narrowing of the Space Charge Region (SCR). The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source. The increase of the electrical field causes rather the narrowing of the SCR. That can provide an improvement of the solar cell’s electrical outputs.
