Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important an...Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at present.As a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties.Herein,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect transistor.In addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it.In various measurements,SiP exhibits obvious anisotropy and good photoelectric performance.This work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices.展开更多
基金the National Natural Science Foundation of China(Nos.62125404,62174155,62004193,12004375,and 51727809)the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB43000000)the CAS-JSPS Cooperative Research Project(No.GJHZ2021131)the Youth Innovation Promotion Association of CAS(No.2022112).
文摘Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at present.As a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties.Herein,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect transistor.In addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it.In various measurements,SiP exhibits obvious anisotropy and good photoelectric performance.This work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices.
