High responsivity photodetectors based on graphene/WSe_(2) heterostructure by photogating effect

Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI_3 Perovskite Nanorods Bilayer Structure

The outstanding performances of nanostructured allinorganic CsPbX_3(X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI_3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI_3 nanorod layer was fabricated. The high-quality CsPbI_3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device.The perovskite layer efficiently absorbs light, while the organicsemiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor,with a photoresponsivity as high as 4300 A W^(-1), ultra-high photosensitivity of 2.2 9 106, and excellent stability over 1 month.This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.

Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector

Due to their excellent carrier mobility,high absorption coefficient and narrow bandgap,most 2D IVA metal chalcogenide semiconductors(GIVMCs,metal=Ge,Sn,Pb;chalcogen=S,Se)are regarded as promising candidates for realizing high-performance photodetectors.We synthesized high-quality two-dimensional(2D)tin sulfide(SnS)nanosheets using the physical vapor deposition(PVD)method and fabricated a 2D SnS visible-light photodetector.The photodetector exhibits a high photoresponsivity of 161 A·W-1 and possesses an external quantum efficiency of 4.45×10^(4)%,as well as a detectivity of 1.15×10^(9) Jones under 450 nm blue light illumination.Moreover,under poor illumination at optical densities down to 2 mW·cm^(-2),the responsivity of the device is higher than that at stronger optical densities.We suggest that a photogating effect in the 2D SnS photodetector is mainly responsible for its low-light responsivity.Defects and impurities in 2D SnS can trap carriers and form localized electric fields,which can delay the recombination process of electron-hole pairs,prolong carrier lifetimes,and thus improve the low-light responsivity.This work provides design strategies for detecting low levels of light using photodetectors made of 2D materials.

Perovskite/organic-semiconductor heterojunctions for ultrasensitive photodetection

Broadband photodetectors with unprecedented responsivity were reported.It widens the application of organometal halide perovskites in highly sensitive,low-cost and flexible photodetectors.The fundamental device physics revealed will have significant impact on the design of future ultrasensitive photodetectors and other optoelectronic devices.