This paper used optical emission spectroscopy （OES） to study the gas phase in high power DC arc plasma jet chemical vapour deposition （CVD） during diamond films growth processes. The results show that all the depo...This paper used optical emission spectroscopy （OES） to study the gas phase in high power DC arc plasma jet chemical vapour deposition （CVD） during diamond films growth processes. The results show that all the deposition parameters （methane concentration, substrate temperature, gas flow rate and ratio of H2/Ar） could strongly influence the gas phase. C2 is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C2 and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C2 is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.展开更多
Optical emission spectroscopy （OES） was used to study the gas phase composition near the substrate surface during diamond deposition by high-power DC arc plasma jet chemical vapor deposition （CVD）. C2 radical was ...Optical emission spectroscopy （OES） was used to study the gas phase composition near the substrate surface during diamond deposition by high-power DC arc plasma jet chemical vapor deposition （CVD）. C2 radical was determined as the main carbon radical in this plasma atmosphere. The deposition parameters, such as substrate temperature, anode-substrate distance, methane concentration, and gas flow rate, were inspected to find out the influence on the gas phase. A strong dependence of the concentrations and distribution of radicals on substrate temperature was confirmed by the design of experiments （DOE）. An explanation for this dependence could be that radicals near the substrate surface may have additional ionization or dissociation and also have recombination, or are consumed on the substrate surface where chemical reactions occur.展开更多
A prototype of Pulsed Plasma Arc Cladding system was developed, in which single power source supplies both transferred plasma arc (TPA) and non-transferred plasma arc (N-TPA). Both plasmas work in turn in a high frequ...A prototype of Pulsed Plasma Arc Cladding system was developed, in which single power source supplies both transferred plasma arc (TPA) and non-transferred plasma arc (N-TPA). Both plasmas work in turn in a high frequency controlled by an IGBT connecting nozzle and workpiece. The working frequency of IGBT ranges from 50 ～ 7 000 Hz, in which the plasmas can work in turn smoothly. Higher than 500 Hz of working frequency is suggested for promotion of cladding quality and protection of IGBT. Drag phenomenon of TPA intensifies as the frequency goes up, which tends to increase the current proportion of TPA and suppress N-TPA. The occupation ratio of IGBT can be regulated from 5% ～ 95%, which balances the power supplies of both plasmas. An occupation ratio higher than 50% gives adequate proportion of arc current for N-TPA to preheat powder.展开更多
Conventional arc models are usually used to research the interaction between switching arc and circuit. It is important to simulate the fault arc for arc flash calculations, choice of electrical equipments and power s...Conventional arc models are usually used to research the interaction between switching arc and circuit. It is important to simulate the fault arc for arc flash calculations, choice of electrical equipments and power system protection. This paper investigates several conventional arc models for calculating the fault arcing current. Simulation results show that conventional arc models can be used to simulate the fault arc if the parameters of arc models are given properly. This paper provides the parameters of 5 popular arc models and describes the simulation results of the fault arc.展开更多
文摘This paper used optical emission spectroscopy （OES） to study the gas phase in high power DC arc plasma jet chemical vapour deposition （CVD） during diamond films growth processes. The results show that all the deposition parameters （methane concentration, substrate temperature, gas flow rate and ratio of H2/Ar） could strongly influence the gas phase. C2 is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C2 and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C2 is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.
基金the National High-Tech Research and Development Program of China (No.2002AA305508)the National Natural Science Foundation of China (No.50472095)+1 种基金the Scientific Research Foundation for the Returned Overseas Chinese Scholars (No.2003-14)Beijing Novel Project (No. 2003A13).]
文摘Optical emission spectroscopy （OES） was used to study the gas phase composition near the substrate surface during diamond deposition by high-power DC arc plasma jet chemical vapor deposition （CVD）. C2 radical was determined as the main carbon radical in this plasma atmosphere. The deposition parameters, such as substrate temperature, anode-substrate distance, methane concentration, and gas flow rate, were inspected to find out the influence on the gas phase. A strong dependence of the concentrations and distribution of radicals on substrate temperature was confirmed by the design of experiments （DOE）. An explanation for this dependence could be that radicals near the substrate surface may have additional ionization or dissociation and also have recombination, or are consumed on the substrate surface where chemical reactions occur.
文摘A prototype of Pulsed Plasma Arc Cladding system was developed, in which single power source supplies both transferred plasma arc (TPA) and non-transferred plasma arc (N-TPA). Both plasmas work in turn in a high frequency controlled by an IGBT connecting nozzle and workpiece. The working frequency of IGBT ranges from 50 ～ 7 000 Hz, in which the plasmas can work in turn smoothly. Higher than 500 Hz of working frequency is suggested for promotion of cladding quality and protection of IGBT. Drag phenomenon of TPA intensifies as the frequency goes up, which tends to increase the current proportion of TPA and suppress N-TPA. The occupation ratio of IGBT can be regulated from 5% ～ 95%, which balances the power supplies of both plasmas. An occupation ratio higher than 50% gives adequate proportion of arc current for N-TPA to preheat powder.
文摘Conventional arc models are usually used to research the interaction between switching arc and circuit. It is important to simulate the fault arc for arc flash calculations, choice of electrical equipments and power system protection. This paper investigates several conventional arc models for calculating the fault arcing current. Simulation results show that conventional arc models can be used to simulate the fault arc if the parameters of arc models are given properly. This paper provides the parameters of 5 popular arc models and describes the simulation results of the fault arc.
