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Plasma Density Influence on the Properties of a Plasma Filled Rod Pinch Diode 被引量:1
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作者 孙江 孙剑锋 +3 位作者 杨海亮 张鹏飞 苏兆锋 周军 《Plasma Science and Technology》 SCIE EI CAS CSCD 2013年第9期904-907,共4页
The rod pinch diode is perfect as a source of accelerators for flash X-ray radiography by virtue of a small and stable spot. But it is not suitable for intensive curreЦt drivers because of high diode impendence of 40... The rod pinch diode is perfect as a source of accelerators for flash X-ray radiography by virtue of a small and stable spot. But it is not suitable for intensive curreЦt drivers because of high diode impendence of 40~60Ω. However, by employing pre-filled plasma into diode prior to the driving current, the diode impendence can be effectively reduced. Plasma density plays an important role in this process, especially for sheath formation and space charge current in the diode. Analysis and simulation results show that a proper range of plasma density could be 1015~1016 cm-3. 展开更多
关键词 plasma density plasma filled rod pinch diode (PFRPD) SHEATH space chargecurrent
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Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface
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作者 刘春玲 么艳平 +5 位作者 王春武 高欣 乔忠良 李梅 王玉霞 薄报学 《Chinese Optics Letters》 SCIE EI CAS CSCD 2008年第3期183-185,共3页
In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes (LDs) by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs(110) surface. The optimum passiva... In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes (LDs) by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs(110) surface. The optimum passivation conditions obtained are 60-W radio frequency (RF) power and 20-min duration. So the laser cavity surfaces are treated under the optimum passivation conditions. Consequently, compared with unpassivated lasers with only AR/HR-eoatings, the catastrophic optical damage (COD) threshold value of the passivated lasers by H2S plasma treatment is increased by 33%, which is almost the same as that of (NH4)2Sx treatment. And the life-test experiment has demonstrated that this passivation method is more stable than (NH4)2Sx solution wet-passivated treatment. 展开更多
关键词 GaAs Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface NH NM
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Simultaneous red-green-blue electroluminescent enhancement directed by surface plasmonic "far-field" of facile gold nanospheres 被引量:1
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作者 Xiaoyan Wu Yiqi Zhuang +6 位作者 Zhongtao Feng Xuehong Zhou Yuzhao Yang Linlin Liu Zengqi Xie Xudong Chen Yuguang Ma 《Nano Research》 SCIE EI CAS CSCD 2018年第1期151-162,共12页
Based on the "far-field" effect of surface plasma resonance, simultaneous red-green-blue electroluminescence enhancement by facile synthesized gold nanospheres were realized in this work, which would be difficult an... Based on the "far-field" effect of surface plasma resonance, simultaneous red-green-blue electroluminescence enhancement by facile synthesized gold nanospheres were realized in this work, which would be difficult and complex to attain using wavelength-selected localized surface plasma resonance. The plasmonic "far-field" effect can simultaneously enhance the whole emission region in the white light range, because the enhancing regions from blue to red emission are largely overlapped. By doping gold nanospheres embedded in a poly(3,4-ethylene dioxythiophene):polystyrene sulfonic acid (PEDOT:PSS) layer, yield enhancement is achieved in more than 95% devices with the best enhancing ratio of 60% and the commission International de UEclairage (CIE) coordinate is stable at approximately (0.33, 0.36). The plasmonic "far-field" effect requires an ultra-low working concentration of Au NPs in picomolar magnitude, and shows little negative effect on the electronic process and light scattering, which has big potential in realizing highly efficient white organic light emitting diodes. 展开更多
关键词 gold nanoparticles(Au NPs) "far-field" effect surface plasma resonance white organic lightemitting diodes
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