The rod pinch diode is perfect as a source of accelerators for flash X-ray radiography by virtue of a small and stable spot. But it is not suitable for intensive curreЦt drivers because of high diode impendence of 40...The rod pinch diode is perfect as a source of accelerators for flash X-ray radiography by virtue of a small and stable spot. But it is not suitable for intensive curreЦt drivers because of high diode impendence of 40～60Ω. However, by employing pre-filled plasma into diode prior to the driving current, the diode impendence can be effectively reduced. Plasma density plays an important role in this process, especially for sheath formation and space charge current in the diode. Analysis and simulation results show that a proper range of plasma density could be 1015～1016 cm-3.展开更多
In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes （LDs） by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs（110） surface. The optimum passiva...In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes （LDs） by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs（110） surface. The optimum passivation conditions obtained are 60-W radio frequency （RF） power and 20-min duration. So the laser cavity surfaces are treated under the optimum passivation conditions. Consequently, compared with unpassivated lasers with only AR/HR-eoatings, the catastrophic optical damage （COD） threshold value of the passivated lasers by H2S plasma treatment is increased by 33%, which is almost the same as that of （NH4）2Sx treatment. And the life-test experiment has demonstrated that this passivation method is more stable than （NH4）2Sx solution wet-passivated treatment.展开更多
基金supported by National Natural Science Foundation of China(No.11105105)
文摘The rod pinch diode is perfect as a source of accelerators for flash X-ray radiography by virtue of a small and stable spot. But it is not suitable for intensive curreЦt drivers because of high diode impendence of 40～60Ω. However, by employing pre-filled plasma into diode prior to the driving current, the diode impendence can be effectively reduced. Plasma density plays an important role in this process, especially for sheath formation and space charge current in the diode. Analysis and simulation results show that a proper range of plasma density could be 1015～1016 cm-3.
基金the National Natural Science Foundation of China under Grant No.60477010 and 60476026
文摘In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes （LDs） by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs（110） surface. The optimum passivation conditions obtained are 60-W radio frequency （RF） power and 20-min duration. So the laser cavity surfaces are treated under the optimum passivation conditions. Consequently, compared with unpassivated lasers with only AR/HR-eoatings, the catastrophic optical damage （COD） threshold value of the passivated lasers by H2S plasma treatment is increased by 33%, which is almost the same as that of （NH4）2Sx treatment. And the life-test experiment has demonstrated that this passivation method is more stable than （NH4）2Sx solution wet-passivated treatment.
