InGaN-based light-emitting diode(LED)as for the replacement of conventional fluorescent lighting source still needs a great effort to improve the light-extracting efficiency as well as internal quantum efficiency of L...InGaN-based light-emitting diode(LED)as for the replacement of conventional fluorescent lighting source still needs a great effort to improve the light-extracting efficiency as well as internal quantum efficiency of LEDs.Surface plasmon technology has recently attracted considerable interest,because the spontaneous emission rate and the light extraction efficiency of a light-emitting device can be simultaneously enhanced through the coupling between an InGaN quantum well and surface plasmons.The surface plasmon-emitter coupling technique would lead to high brightness multichip white LEDs that offer realistic alternatives to conventional fluorescent light sources.In this article,the possible enhancement mechanism of surface plasmon is discussed,and then recent developments of surface-plasmon-enhanced light-emitting diode are introduced.展开更多
According to the electromagnetic field distributions, there exist two kinds of coupled spoof surface plasmon polaritons（SSPPs）, the symmetric and anti-symmetric modes, in the three-dimensional（3D） subwavelength sp...According to the electromagnetic field distributions, there exist two kinds of coupled spoof surface plasmon polaritons（SSPPs）, the symmetric and anti-symmetric modes, in the three-dimensional（3D） subwavelength spoof–insulator–spoof（SIS） waveguide. We study the dispersion and excitation of the two kinds of coupled SSPPs supported by the 3D SIS waveguide. The evolution of the dispersion with the thickness and gap width of the waveguide is numerically investigated,and we give a theoretical analysis according to the coupling mechanism. Specially, based on the coupling mechanism,we design a zipper structure, through which the excitation and propagation of the anti-symmetric coupled modes can be realized effectively.展开更多
基金Key Fund Projects of Shanxi Province for Returned Overseas Students(2009-03)
文摘InGaN-based light-emitting diode(LED)as for the replacement of conventional fluorescent lighting source still needs a great effort to improve the light-extracting efficiency as well as internal quantum efficiency of LEDs.Surface plasmon technology has recently attracted considerable interest,because the spontaneous emission rate and the light extraction efficiency of a light-emitting device can be simultaneously enhanced through the coupling between an InGaN quantum well and surface plasmons.The surface plasmon-emitter coupling technique would lead to high brightness multichip white LEDs that offer realistic alternatives to conventional fluorescent light sources.In this article,the possible enhancement mechanism of surface plasmon is discussed,and then recent developments of surface-plasmon-enhanced light-emitting diode are introduced.
基金Project supported by the National Basic Research Program of China(Grant No.2013CBA01702)the National Natural Science Foundation of China(Grant Nos.61377016,61575055,10974039,61307072,61308017,and 61405056)
文摘According to the electromagnetic field distributions, there exist two kinds of coupled spoof surface plasmon polaritons（SSPPs）, the symmetric and anti-symmetric modes, in the three-dimensional（3D） subwavelength spoof–insulator–spoof（SIS） waveguide. We study the dispersion and excitation of the two kinds of coupled SSPPs supported by the 3D SIS waveguide. The evolution of the dispersion with the thickness and gap width of the waveguide is numerically investigated,and we give a theoretical analysis according to the coupling mechanism. Specially, based on the coupling mechanism,we design a zipper structure, through which the excitation and propagation of the anti-symmetric coupled modes can be realized effectively.
