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Plasmonic silicon quantum dots extend photodetection into mid-infrared range 被引量:1
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作者 zheyu fang 《Science Bulletin》 SCIE EI CAS CSCD 2017年第21期1430-1431,共2页
Nowadays the development of Internet of Things(IoT)and defense technologies imperatively needs high-performance photodetectors that can work in a broadband wavelength range,in particular,covering the mid-infrared(MIR)... Nowadays the development of Internet of Things(IoT)and defense technologies imperatively needs high-performance photodetectors that can work in a broadband wavelength range,in particular,covering the mid-infrared(MIR)region[1].This generates great interest in the incorporation of a series of novel optoelectronic materials and structures into the photodetectors.Graphene and colloidal quantum dots(QDs)are key players among novel materials used to fabricate high-performance photodetectors[2–4].By taking advantage of the high mobility of 展开更多
关键词 QDS UV NIR Si MIR plasmonic silicon quantum dots extend photodetection into mid-infrared range
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