Preparation and electrochemical lithium storage performance of porous silicon microsphere composite with metal modification and carbon coating

This work adopts a multi⁃step etching⁃heat treatment strategy to prepare porous silicon microsphere com⁃posite with Sb⁃Sn surface modification and carbon coating(pSi/Sb⁃Sn@C),using industrial grade SiAl alloy micro⁃spheres as a precursor.pSi/Sb⁃Sn@C had a 3D structure with bimetallic(Sb⁃Sn)modified porous silicon micro⁃spheres(pSi/Sb⁃Sn)as the core and carbon coating as the shell.Carbon shells can improve the electronic conductivi⁃ty and mechanical stability of porous silicon microspheres,which is beneficial for obtaining a stable solid electrolyte interface(SEI)film.The 3D porous core promotes the diffusion of lithium ions,increases the intercalation/delithia⁃tion active sites,and buffers the volume expansion during the intercalation process.The introduction of active met⁃als(Sb⁃Sn)can improve the conductivity of the composite and contribute to a certain amount of lithium storage ca⁃pacity.Due to its unique composition and microstructure,pSi/Sb⁃Sn@C showed a reversible capacity of 1247.4 mAh·g^(-1) after 300 charge/discharge cycles at a current density of 1.0 A·g^(-1),demonstrating excellent rate lithium storage performance and enhanced electrochemical cycling stability.

Fabrication of Congo Red/Oxidized Porous Silicon (CR/OPS) pH-Sensors

The fabrication of nano porous silicon, nPSi, using alkali etching process has been studied and carried out. The surface chemistry of anisotropic etching of n-type Si-wafer is reviewed and the anisotropic chemical etching of silicon in alkaline solution using wetting agents is discussed. Transformation of crystallographic plane of n-Si (211) to nPSi (100) has occurred on using n-propanol as wetting agent. The rate of pore formation was 0.02478 - 0.02827 μm/min, which was heavily dependent upon the concentration of the etchant containing wetting agents, allowing patterned porous silicon formation through selective doping of the substrate. A particle size of 15 nm for porous nano-silicon was calculated from the XRD data. Porosity of PS layers is about 10%. Pore diameter and porous layer thickness are 0.0614 nm and 16 μm, respectively. The energy gap of the produced porous silicon is 3.3 eV. Furthermore, the combination of PS with Congo Red, which are nanostructured due to their deposition within the porous matrix is discussed. Such nano compounds offer broad avenue of new and interesting properties depending on the involved materials as well as on their morphology. Chemical route was utilized as the host material to achieve pores filling. They were impregnated with Congo Red, which gave good results for the porous silicon as a promising pH sensor.

Preparation and properties of porous silicon carbide ceramics through coat-mix and composite additives process

The core-shell structure silicon-resin precursor powders were synthesized through coat-mix process and addition of Al2O3-SiO2-Y2O3 composite additives.A series of porous silicon carbide ceramics were produced after molding,carbonization and sintering.The phase,morphology,porosity,thermal conductivity,thermal expansion coefficient,and thermal shock resistance were analyzed.The results show that porous silicon carbide ceramics can be produced at low temperature.The grain size of porous silicon carbide ceramic is small,and the thermal conductivity is enhanced significantly.Composite additives also improve the thermal shock resistance of porous ceramics.The bending strength loss rate after 30 times of thermal shock test of the porous ceramics which were added Al2O3-SiO2-Y2O3 and sintered at 1 650 ℃ is only 6.5%.Moreover,the pore inside of the sample is smooth,and the pore size distribution is uniform.Composite additives make little effect on the thermal expansion coefficient of the porous silicon carbide ceramics.

Ag Deposition Forms and Uniformity on Porous Silicon by Electrochemical Method

The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.

Analysis and Design of an Accelerometer Fabricated with Porous Silicon as Sacrificial Layer

A piezoresistive silicon accelerometer fabricated by a selective,self-stopping porous silicon (PS) etching method using an epitaxial layer for movable microstructures is described and analyzed.The technique is capable of constructing a microstructure precisely.PS is used as a sacrificial layer,and releasing holes are etched in the film.TMAH solution with additional Si powder and (NH_4)_2S_2O_8 is used to remove PS through the small releasing holes without eroding uncovered Al.The designed fabrication process is full compatible with standard CMOS process.

Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer

A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.

Transfer of Thin Epitaxial Silicon Films by Wafer Bonding and Splitting of Double Layered Porous Silicon for SOI Fabrication

A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam evaporator.This wafer is bonded with other silicon wafer with a thermal oxide layer at room temperature.The bonded pairs are split along the porous silicon layer during subsequent thermal annealing.Thus the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator structure.SEM,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.

BLUE－VIOLET LIGHT EMISSION FROM POROUS SILICON

Porous silicon samples are made on Si wafers with different resistivities under different anod ic-react ion conditions. Visible photoluminescent spectra of porous silicon (PS) at room temperature are measured using a fluorescent spectrograph where blue-violet light is observed. The decision of the resistivity of Si substrates is provided.

A Novel Technology for Post-Treating of Porous Silicon Thick Films in H_2O_2

The solution of H 2O 2 is proposed to post-treat thick porous silicon (PS) films.The prepared PS film as the cathode is applied about 10mA/cm 2 current in mixture of ethanol,HF,and H 2O 2 solutions,which is expected to improve the stability and the smoothness of the surface and the mechanical property of the thick porous silicon films.The microstructure of the PS thick films with thicknesse of 20μm and 70μm has been studied.The SEM images show significant improved smoothness on surface of PS films,and XRD spectra suggest the formation of oxide layer after post-treating in H 2O 2.

Porosity Determination Equation for Porous Silicon

Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is shown that for porous silicon made from p type silicon,there is a universal relationship,it is possible to determine the change in porosity with respect to etching under a set etching current density.This relationship is checked against experimental data from several reports on these etching parameters,and they confirm the validity.

Theoretical Study of Interaction Between S2 and SiHx （x=1, 2, 3） in Porous Silicon

The interaction between S2 molecule and SiHx （x=1, 2, 3） in porous silicon is investigated using the B3LYP method of density functional theory with the lanl2dz basis set. The model of porous silicon doped with CH3, Si-O-Si and OH species is built. By analyzing the binding energy and electronic transfer, we conclude that the interaction of S2 molecule with SiHx （x=1, 2, 3） is much stronger than the interaction of S2 molecule with CH3 and OH, as S2 molecule is located in different sites of the model. Using the transition state theory, we study the Si2H6＋S2→H3SiH2SiS＋HS reaction, and the reaction energy barrier is 50.2 kJ/mol, which indicates that the reaction is easy to occur.

Pore structure of unidirectional solidified lotus-type porous silicon

Lotus-type porous silicon with elongated pores was fabricated by unidirectional solidification under pressurized hydrogen. Porosity, pore diameter, and pore length can be adjusted by changing solidification speed and hydrogen pressure. The porosity of the ingot is nearly constant under different solidification speeds, but decreases with the increase of hydrogen pressure. The overall porosities of ingots fabricated at different hydrogen pressures were evaluated through a theoretical model. Findings are in good agreement with experimental values. The average pore diameter and pore length increase simultaneously while the average pore aspect ratio changes slightly with the decreases of solidification speed and hydrogen pressure. The average pore length is raised from 7 to 24 mm and the pore aspect ratio is raised from 8 to 20 respectively with the average pore diameter promoted by about 0.3 mm through improving the superheat degree of the melt from 200 to 300 K.

RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION

Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.

Structural, Optical and Electrical Properties of ZnS/Porous Silicon Heterostructures

ZnS films are deposited by pulsed laser deposition on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS （111） direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange-red emission from PS layers. Based on the I-V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I-V plot.

Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer

The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.

The light-enhanced NO_2 sensing properties of porous silicon gas sensors at room temperature

The NO2 gas sensing behavior of porous silicon（PS） is studied at room temperature with and without ultraviolet（UV） light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p ＋-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.

Preparation of SiC Porous Ceramics by Crystalline Silicon Cutting Waste

SiC porous ceramics were prepared at 1 400 ℃ for4 h with crystalline silicon cutting waste and activated carbon as main starting materials and NH4HCO3 as the pore-forming agent. Effects of NH4HCO3 additions( 0,20%,30%,40%,by mass) on the phase composition,microstructure,sintering properties,cold compressive strength and thermal shock resistance of as-prepared Si C porous ceramics were investigated. The results show that:( 1) addition of NH4HCO3 remarkably influences the apparent porosity and cold compressive strength of specimens. The apparent porosity achieves its maximum value( 63. 40%) when 40% NH4HCO3 is added,while the minimum cold compressive strength is 4. 77 MPa;( 2) the specimen with 40% NH4HCO3 has the best thermal shock resistance. The thermal cycling times between1 000 ℃ to room temperature reach 62;( 3) the addition of NH4HCO3 does not remarkably affect the phase composition of the specimens;( 4) the specimens include a large number of SiC particles and a small amount of SiC whiskers.

Plasmonic characteristics of suspended graphene-coated wedge porous silicon nanowires with Ag partition

We investigate a graphene-coated nanowire waveguide(GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz(THz) frequency band are simulated by the finite element method(FEM). The parameters including the gap between the nanowires and Ag partition, the height of the nanowire, the thickness of the Ag partition, and the Fermi level of graphene, are optimized. The simulation results show that a normalized mode field area of ~10-4 and a figure of merit of ~100 can be achieved. Compared with the cylindrical GCNW and isolated GCNW, the proposed wedge GCNW has good electric field enhancement.A waveguide sensitivity of 32.28 is obtained, which indicates the prospects of application in refractive index(RI) sensing in THz frequency band. Due to the adjustable plasmonic characteristics by changing the Fermi level(EF), the proposed structure has promising applications in the electro-optic modulations, optical interconnects, and optical switches.

Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts

This paper reports the surface morphology and I-V curves of porous silicon （PS） samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias （10 V or 3 V） for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the A1/PS interface and PS matrix morphology.

Enhanced Field Emission from Well-Patterned Silicon Nanoporous Pillar Arrays

The silicon nanoporous pillar array （Si-NPA） is synthesized by using hydrothermal etching method, and the electron field emission properties are studied. The results show that Si-NPA has a low turn-on field of 1.48 V/μm at the emission current of 0.1 μA and its field emission is relatively stable. The field emission enhancement of Si-NPA is believed to originate from its unique morphology and structure. Our finding demonstrates that the Si-NPA is a promising candidate material for field emission applications.