Temperature Effects on Photoluminescence Properties of Porous Silicon

The temperature effects on the photoluminescence(PL) properties of porous silicon(PS) have been observed in the early stage. However, the obtained results are different. Through repeated experiments, some different and useful information are got, which benefits us in that PL properties of porous silicon can be fully made use of. Firstly, samples with porosity of 76% and 49% were chosen to study the exciting temperature effects on the PL spectrum. For the samples with low porosity, the decreasing temperature causes the peak wavelength to be red-shifting and that of the samples with high porosity to present the blue-shifting trend. The light intensity of both reaches the maximum at -10℃. These experimental results can be well explained with the synthesized center PL model based on the quantum confinement model, other than the PL efficiency function σ(λ). Thereafter, PL properties of PS samples fabricated separately under the temperature of -10℃, 0℃, 10℃, 20℃ and 30℃ were studied. The results indicate that with the decrease of the etching temperature, the PL intensity increases from 406.7 to 716.6 and the peak wavelength blue-shifts from 698.9nm to 671.8nm. The WHFM of the PL spectrum dramatically narrows. At the same time, the images observed by AFM show that with the decreasing temperature, the holes are becoming deeper and the porosity is higher, which suggests that the decreasing temperature accelerates the etching rate.

Porous silicon/carbon composites as anodes for high-performance lithium-ion batteries

Silicon anodes are promising for use in lithium-ion batteries.However,their practical application is severely limited by their large volume expansion leading to irreversible material fracture and electrical disconnects.This study proposes a new top-down strategy for preparing microsize porous silicon and introduces polyacrylonitrile(PAN)for a nitrogen-doped carbon coating,which is designed to maintain the internal pore volume and lower the expansion of the anode during lithiation and delithiation.We then explore the effect of temperature on the evolution of the structure of PAN and the electrochemical behavior of the composite electrode.After treatment at 400℃,the PAN coating retains a high nitrogen content of 11.35 at%,confirming the presence of C—N and C—O bonds that improve the ionic-electronic transport properties.This treatment not only results in a more intact carbon layer structure,but also introduces carbon defects,and produces a material that has remarkable stable cycling even at high rates.When cycled at 4 A g^(-1),the anode had a specific capacity of 857.6 mAh g^(-1) even after 200 cycles,demonstrating great potential for high-capacity energy storage applications.

Temperature Dependence of Photoluminescence of Porous Silicon

The photoluminescence(photoluminescence)spectra of PS(porous silicon)prepared via electrochemical etching are presented and analysed.The PL of samples was measured at various temperatures.The corresponding parameters of peaks(energy,intensity and FWHM)were calculated using a fitting procedure,where the PL spectrum was approximated by a set of Gaussian peaks.This model is based on the presumption that the emission of photons in the PL process represents independent events.The optimal number of peaks used in the model was estimated,where the residuum of the approximation was used as a criterion.The low thermal dependence of energies in the PL spectra(blue shift)indicates the strong influence of defects on the position of corresponding PL maxima.The observed increase of energies of peaks with temperature requires additional explanation.

Preparation and electrochemical lithium storage performance of porous silicon microsphere composite with metal modification and carbon coating

This work adopts a multi⁃step etching⁃heat treatment strategy to prepare porous silicon microsphere com⁃posite with Sb⁃Sn surface modification and carbon coating(pSi/Sb⁃Sn@C),using industrial grade SiAl alloy micro⁃spheres as a precursor.pSi/Sb⁃Sn@C had a 3D structure with bimetallic(Sb⁃Sn)modified porous silicon micro⁃spheres(pSi/Sb⁃Sn)as the core and carbon coating as the shell.Carbon shells can improve the electronic conductivi⁃ty and mechanical stability of porous silicon microspheres,which is beneficial for obtaining a stable solid electrolyte interface(SEI)film.The 3D porous core promotes the diffusion of lithium ions,increases the intercalation/delithia⁃tion active sites,and buffers the volume expansion during the intercalation process.The introduction of active met⁃als(Sb⁃Sn)can improve the conductivity of the composite and contribute to a certain amount of lithium storage ca⁃pacity.Due to its unique composition and microstructure,pSi/Sb⁃Sn@C showed a reversible capacity of 1247.4 mAh·g^(-1) after 300 charge/discharge cycles at a current density of 1.0 A·g^(-1),demonstrating excellent rate lithium storage performance and enhanced electrochemical cycling stability.

Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer

The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.

Holmium-doped Porous Silicon Prepared by a New Electrochemical Approach and Its Photoluminescence

Porous silicon(PS) was found to emit visible luminescence at room temperature. This phenomenon implies a potential application of silicon in optoelectronics. The luminescence of PS can be improved by doping with rare earth elements. A new electrochemical doping approach, constant potential electrolysis, and a new electrolyte system for doping of porous silicon with holmium were reported. By this approach and system, the doping products were well controlled, and Ho doped PS(HDPS) was found to emit much intenser visible photoluminescence with blue shift in wavelength and higher luminescence stability at room temperature than that for corresponding PS wafer. The effects of various kinds of holmium compounds, solvents, applied voltage, concentration of holmium nitrate and doping time on photoluminescence of HDPS were investigated, and the optimum doping conditions were fixed. The luminescence mechanisms for PS and HDPS were discussed.

Ag Deposition Forms and Uniformity on Porous Silicon by Electrochemical Method

The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.

Time-Resolved Photoluminescence Study of Silicon Nanoporous Pillar Array

A silicon nanoporous pillar array （Si-NPA） is thought to be a promising functional substrate for constructing a variety of Si-based optoelectronic nanodevices, due to its unique hierarchical structure and enhanced physical properties. This makes the in-depth understanding of the photoluminescence （PL） of Si-NPA crucial for both scientific research and practical applications. In this work, the PL properties of Si-NPA are studied by measuring both the steady-state and time-resolved PL spectrum. Based on the experimental data, the three PL bands of Si-NPA, i.e., the ultraviolet band, the purple-blue plateau and the red band are assigned to the oxygen-excess defects in Si oxide or silanol groups at the surface of Si nanocrystallites （nc-Si）, oxygen deficiency defects in Si oxide, and band-to-band transition of nc-Si under the frame of quantum confinement combining with the surface states like Si=O and Si-O^i bonds at the surface of nc-Si, respectively. These results may provide some novel insight into the PL process of Si-NPA and may be helpful for clarifying the PL mechanism.

Photoluminescence Properties of LaF₃-Coated Porous Silicon

This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.

BLUE－VIOLET LIGHT EMISSION FROM POROUS SILICON

Porous silicon samples are made on Si wafers with different resistivities under different anod ic-react ion conditions. Visible photoluminescent spectra of porous silicon (PS) at room temperature are measured using a fluorescent spectrograph where blue-violet light is observed. The decision of the resistivity of Si substrates is provided.

Analysis and Design of an Accelerometer Fabricated with Porous Silicon as Sacrificial Layer

A piezoresistive silicon accelerometer fabricated by a selective,self-stopping porous silicon (PS) etching method using an epitaxial layer for movable microstructures is described and analyzed.The technique is capable of constructing a microstructure precisely.PS is used as a sacrificial layer,and releasing holes are etched in the film.TMAH solution with additional Si powder and (NH_4)_2S_2O_8 is used to remove PS through the small releasing holes without eroding uncovered Al.The designed fabrication process is full compatible with standard CMOS process.

Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer

A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.

Transfer of Thin Epitaxial Silicon Films by Wafer Bonding and Splitting of Double Layered Porous Silicon for SOI Fabrication

A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam evaporator.This wafer is bonded with other silicon wafer with a thermal oxide layer at room temperature.The bonded pairs are split along the porous silicon layer during subsequent thermal annealing.Thus the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator structure.SEM,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.

A Novel Technology for Post-Treating of Porous Silicon Thick Films in H_2O_2

The solution of H 2O 2 is proposed to post-treat thick porous silicon (PS) films.The prepared PS film as the cathode is applied about 10mA/cm 2 current in mixture of ethanol,HF,and H 2O 2 solutions,which is expected to improve the stability and the smoothness of the surface and the mechanical property of the thick porous silicon films.The microstructure of the PS thick films with thicknesse of 20μm and 70μm has been studied.The SEM images show significant improved smoothness on surface of PS films,and XRD spectra suggest the formation of oxide layer after post-treating in H 2O 2.

Porosity Determination Equation for Porous Silicon

Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is shown that for porous silicon made from p type silicon,there is a universal relationship,it is possible to determine the change in porosity with respect to etching under a set etching current density.This relationship is checked against experimental data from several reports on these etching parameters,and they confirm the validity.

Theoretical Study of Interaction Between S2 and SiHx （x=1, 2, 3） in Porous Silicon

The interaction between S2 molecule and SiHx （x=1, 2, 3） in porous silicon is investigated using the B3LYP method of density functional theory with the lanl2dz basis set. The model of porous silicon doped with CH3, Si-O-Si and OH species is built. By analyzing the binding energy and electronic transfer, we conclude that the interaction of S2 molecule with SiHx （x=1, 2, 3） is much stronger than the interaction of S2 molecule with CH3 and OH, as S2 molecule is located in different sites of the model. Using the transition state theory, we study the Si2H6＋S2→H3SiH2SiS＋HS reaction, and the reaction energy barrier is 50.2 kJ/mol, which indicates that the reaction is easy to occur.

Preparation and properties of porous silicon carbide ceramics through coat-mix and composite additives process

The core-shell structure silicon-resin precursor powders were synthesized through coat-mix process and addition of Al2O3-SiO2-Y2O3 composite additives.A series of porous silicon carbide ceramics were produced after molding,carbonization and sintering.The phase,morphology,porosity,thermal conductivity,thermal expansion coefficient,and thermal shock resistance were analyzed.The results show that porous silicon carbide ceramics can be produced at low temperature.The grain size of porous silicon carbide ceramic is small,and the thermal conductivity is enhanced significantly.Composite additives also improve the thermal shock resistance of porous ceramics.The bending strength loss rate after 30 times of thermal shock test of the porous ceramics which were added Al2O3-SiO2-Y2O3 and sintered at 1 650 ℃ is only 6.5%.Moreover,the pore inside of the sample is smooth,and the pore size distribution is uniform.Composite additives make little effect on the thermal expansion coefficient of the porous silicon carbide ceramics.

Pore structure of unidirectional solidified lotus-type porous silicon

Lotus-type porous silicon with elongated pores was fabricated by unidirectional solidification under pressurized hydrogen. Porosity, pore diameter, and pore length can be adjusted by changing solidification speed and hydrogen pressure. The porosity of the ingot is nearly constant under different solidification speeds, but decreases with the increase of hydrogen pressure. The overall porosities of ingots fabricated at different hydrogen pressures were evaluated through a theoretical model. Findings are in good agreement with experimental values. The average pore diameter and pore length increase simultaneously while the average pore aspect ratio changes slightly with the decreases of solidification speed and hydrogen pressure. The average pore length is raised from 7 to 24 mm and the pore aspect ratio is raised from 8 to 20 respectively with the average pore diameter promoted by about 0.3 mm through improving the superheat degree of the melt from 200 to 300 K.

Structural, Optical and Electrical Properties of ZnS/Porous Silicon Heterostructures

ZnS films are deposited by pulsed laser deposition on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS （111） direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange-red emission from PS layers. Based on the I-V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I-V plot.