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Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning 被引量:6
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作者 Liu Yang Baimei Tan +5 位作者 Yuling Liu Baohong Gao Yilin Liu Chunyu Han Qi Wang Siyu Tian 《Journal of Semiconductors》 EI CAS CSCD 2018年第12期218-222,共5页
Benzotriazole(BTA), an anticorrosion agent of slurry, is the main organic pollutant remaining after CMP of multilayer copper wiring, and also the main removal object of post CMP cleaning. The adsorption of BTA onto th... Benzotriazole(BTA), an anticorrosion agent of slurry, is the main organic pollutant remaining after CMP of multilayer copper wiring, and also the main removal object of post CMP cleaning. The adsorption of BTA onto the copper could form a dense Cu-BTA film, which makes the copper surface strongly passivated. According to this characteristic, quantitative analysis of BTA residue after cleaning is carried out by contact angle measurement and electrochemical measurement in this paper. A scanning electron microscope(SEM) with EDX was used to observe and analyze the BTA shape and elements. The efficiencies of organic alkali and inorganic alkali on the removal of BTA were studied. The corresponding reaction mechanism was also analyzed. The results show that the adsorption structure of Cu(I)-BTA cannot be destroyed in an alkaline environment with a pH less than 10; the effect of BTA removal by inorganic alkali is worse than that of the organic amine alkali with the coordination structure under the same pH environment; the FA/O Ⅱ chelating agent with the fraction of 200 ppm can effectively remove BTA residue on the surface of copper wafer. 展开更多
关键词 post cmp cleaning benzotriazole(BTA) organic amine alkali electrochemical measurement
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Probing particle removal in brush scrubber cleaning with fluorescence technique 被引量:3
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作者 HUANG YaTing LI Yang +1 位作者 GUO Dan MENG ChunLing 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第12期2994-3000,共7页
Brush scrubber cleaning is widely used for post chemical mechanical polishing(CMP)cleaning in semiconductor manufacturing.In this study,an experimental system based on fluorescence technique and particle-tracking velo... Brush scrubber cleaning is widely used for post chemical mechanical polishing(CMP)cleaning in semiconductor manufacturing.In this study,an experimental system based on fluorescence technique and particle-tracking velocimetry(PTV)technique was employed to characterize the particle removal displacement and velocity in the interface between a transparent copper film and a porous polyvinyl alcohol(PVA)brush during the cleaning process.Several different cleaning conditions including rotation speeds,loading pressure and cleaning agent were examined and the particle removal rate was compared.Elastic and friction removal,hydrodynamic removal and mixed-type removal are the three types of particle removal.Particles with an arc trace and uniform velocity curves were removed by friction and elastic force which were related to the brush load.Particles with a random trace and fluctuant velocity curves were removed by hydrodynamic force which was determined by the brush rotation speed.The increase of particle removal rate(PRR)with brush rotation speed is a logistic function.It is easier to improve PRR by increasing the brush load or by adding surfactant than by increasing the brush rotation speed. 展开更多
关键词 brush-scrub post cmp(chemical mechanical polishing) cleaning particle removal fluorescence technique
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