Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for t...Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation computing.Here,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given first.Then 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are discussed.Moreover,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are introduced.Finally,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.展开更多
As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning ...As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era.As one-dimensional nanomaterials,carbon nanotubes(CNTs)are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties,rendering them the most competitive material in the next-generation ICs technology.However,certain challenges impede the industrialization of CNTs,particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs.Focusing on CNT-based ICs technology,this review summarizes its main technical status,development trends,existing challenges,and future development directions.展开更多
Two-dimensional(2D)van derWaals materials have attracted great interest and facilitated the development of post-Moore electronics owing to their novel physical properties and high compatibility with traditional microf...Two-dimensional(2D)van derWaals materials have attracted great interest and facilitated the development of post-Moore electronics owing to their novel physical properties and high compatibility with traditional microfabrication techniques.Their wafer-scale synthesis has become a critical challenge for large-scale integrated applications.Although the wafer-scale synthesis approaches for some 2D materials have been extensively explored,the preparation of high-quality thin films with well-controlled thickness remains a big challenge.This review focuses on the wafer-scale synthesis of 2D materials and their applications in integrated electronics.Firstly,several representative 2D layered materials including their crystal structures and unique electronic properties were introduced.Then,the current synthesis strategies of 2Dlayeredmaterials at thewafer scale,which are divided into“top-down”and“bottom-up”,were reviewed in depth.Afterwards,the applications of 2D materials wafer in integrated electrical and optoelectronic devices were discussed.Finally,the current challenges and future prospects for 2D integrated electronics were presented.It is hoped that this reviewwill provide comprehensive and insightful guidance for the development of wafer-scale 2D materials and their integrated applications.展开更多
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200sponsored by Tsinghua-Toyota Joint Research Fund+12 种基金in part by National Natural Science Foundation of China under Grant 62374099, Grant 62022047, Grant U20A20168, Grant 51861145202, Grant 51821003, and Grant 62175219in part by the National Key R&D Program under Grant 2016YFA0200400in part by Beijing Natural Science-Xiaomi Innovation Joint Fund Grant L233009in part supported by Tsinghua University-Zhuhai Huafa Industrial Share Company Joint Institute for Architecture Optoelectronic Technologies (JIAOT KF202204)in part by the Daikin-Tsinghua Union Programin part sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Programin part by the Guoqiang Institute, Tsinghua Universityin part by the Research Fund from Beijing Innovation Center for Future Chipin part by Shanxi “1331 Project” Key Subjects Constructionin part by the Youth Innovation Promotion Association of Chinese Academy of Sciences (2019120)the opening fund of Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciencesin part by the project of MOE Innovation Platformin part by the State Key Laboratory of Integrated Chips and Systems
文摘Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation computing.Here,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given first.Then 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are discussed.Moreover,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are introduced.Finally,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.
基金supported by National Natural Science Foundation of China(Grant No.52022078)Shaanxi Provincial Key Research and Development Program(Grant No.2021ZDLGY10-02,2019ZDLGY01-09)。
文摘As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era.As one-dimensional nanomaterials,carbon nanotubes(CNTs)are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties,rendering them the most competitive material in the next-generation ICs technology.However,certain challenges impede the industrialization of CNTs,particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs.Focusing on CNT-based ICs technology,this review summarizes its main technical status,development trends,existing challenges,and future development directions.
基金supported by National Natural Science Foundation of China(Nos.91964203,62274121,and 62104171)Wuhan Science and Technology Major Program(No.2022013702025186)R.C.also acknowledges support from the Young Elite Scientists Sponsorship Program by CAST(No.2022QNRC001).
文摘Two-dimensional(2D)van derWaals materials have attracted great interest and facilitated the development of post-Moore electronics owing to their novel physical properties and high compatibility with traditional microfabrication techniques.Their wafer-scale synthesis has become a critical challenge for large-scale integrated applications.Although the wafer-scale synthesis approaches for some 2D materials have been extensively explored,the preparation of high-quality thin films with well-controlled thickness remains a big challenge.This review focuses on the wafer-scale synthesis of 2D materials and their applications in integrated electronics.Firstly,several representative 2D layered materials including their crystal structures and unique electronic properties were introduced.Then,the current synthesis strategies of 2Dlayeredmaterials at thewafer scale,which are divided into“top-down”and“bottom-up”,were reviewed in depth.Afterwards,the applications of 2D materials wafer in integrated electrical and optoelectronic devices were discussed.Finally,the current challenges and future prospects for 2D integrated electronics were presented.It is hoped that this reviewwill provide comprehensive and insightful guidance for the development of wafer-scale 2D materials and their integrated applications.