Wide band-gap gallium nitride(GaN)device has the advantages of large band-gap,high electron mobility and low dielectric constant.Compared with traditional Si devices,these advantages make it suitable for fast-switchin...Wide band-gap gallium nitride(GaN)device has the advantages of large band-gap,high electron mobility and low dielectric constant.Compared with traditional Si devices,these advantages make it suitable for fast-switching and high-power-density power electronics converters,thus reducing the overall weight,volume and power consumption of power electronic systems.As a review paper,this paper summarizes the characteristics and development of the state-of-art GaN power devices with different structures,analyzes the research status,and forecasts the application prospect of GaN devices.In addition,the problems and challenges of GaN devices were discussed.And thanks to the advantages of GaN devices,both the power density and efficiency of motor drive system are improved,which also have been presented in this paper.展开更多
Sliding mode control(SMC)has been studied since the 1950s and widely used in practical applications due to its insensitivity to matched disturbances.The aim of this paper is to present a review of SMC describing the k...Sliding mode control(SMC)has been studied since the 1950s and widely used in practical applications due to its insensitivity to matched disturbances.The aim of this paper is to present a review of SMC describing the key developments and examining the new trends and challenges for its application to power electronic systems.The fundamental theory of SMC is briefly reviewed and the key technical problems associated with the implementation of SMC to power converters and drives,such chattering phenomenon and variable switching frequency,are discussed and analyzed.The recent developments in SMC systems,future challenges and perspectives of SMC for power converters are discussed.展开更多
基金This work was supported in part by the National Natural Science Foundation of China under Project 51877006,and in part by the Aeronautical Science Foundation of China 20162851016。
文摘Wide band-gap gallium nitride(GaN)device has the advantages of large band-gap,high electron mobility and low dielectric constant.Compared with traditional Si devices,these advantages make it suitable for fast-switching and high-power-density power electronics converters,thus reducing the overall weight,volume and power consumption of power electronic systems.As a review paper,this paper summarizes the characteristics and development of the state-of-art GaN power devices with different structures,analyzes the research status,and forecasts the application prospect of GaN devices.In addition,the problems and challenges of GaN devices were discussed.And thanks to the advantages of GaN devices,both the power density and efficiency of motor drive system are improved,which also have been presented in this paper.
基金supported in part by the National Key R&D Program of China(2019YFB1312000)the National Natural Science Foundation of China(62022030 and 62033005)+2 种基金the Fundamental Research Funds for the Central Universities(HIT.OCEF.2021005)the Heilongjiang Provincial Natural Science Foundation of China(62033005)the SelfPlanned Task of State Key Laboratory of Advanced Welding and Joining(HIT)。
文摘Sliding mode control(SMC)has been studied since the 1950s and widely used in practical applications due to its insensitivity to matched disturbances.The aim of this paper is to present a review of SMC describing the key developments and examining the new trends and challenges for its application to power electronic systems.The fundamental theory of SMC is briefly reviewed and the key technical problems associated with the implementation of SMC to power converters and drives,such chattering phenomenon and variable switching frequency,are discussed and analyzed.The recent developments in SMC systems,future challenges and perspectives of SMC for power converters are discussed.
