Integrated power electronics module based on chip scale packaged power devices

High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-IPEM）, consisting of two chip scale packaged MOSFETs and the corresponding gate driver and protection circuits, is fabricated at the laboratory. The reliability of the IPEM is controlled from the shape design of solder joints and the control of assembly process parameters. The parasitic parameters are extracted using Agilent 4395A impedance analyzer for building the parasitic parameter model of the HB- IPEM. A 12 V/3 A output synchronous rectifier Buck converter using the HB-IPEM is built to test the electrical performance of the HB-IPEM. Low voltage spikes on two MOSFETs illustrate that the three-dimensional package of the HB-IPEM can decrease parasitic inductance. Temperature distribution simulation results of the HB-IPEM using FLOTHERM are given. Heat dissipation of the solder joints makes the peak junction temperature of the chip drop obviously. The package realizes three-dimensional heat dissipation and has better thermal management.

Preface to Special Issue on Towards High Performance Ga_(2)O_(3) Electronics: Epitaxial Growth and Power Devices(Ⅰ)

There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications.

Application of Power Electronics Converters in Renewable Energy

Against the backdrop of global energy shortages and increasingly severe environmental pollution,renewable energy is gradually becoming a significant direction for future energy development.Power electronics converters,as the core technology for energy conversion and control,play a crucial role in enhancing the efficiency and stability of renewable energy systems.This paper explores the basic principles and functions of power electronics converters and their specific applications in photovoltaic power generation,wind power generation,and energy storage systems.Additionally,it analyzes the current innovations in high-efficiency energy conversion,multilevel conversion technology,and the application of new materials and devices.By studying these technologies,the aim is to promote the widespread application of power electronics converters in renewable energy systems and provide theoretical and technical support for achieving sustainable energy development.

Viologen-based flexible electrochromic devices

Electrochromic technology has gained significant attention in various fields such as displays,smart windows,biomedical monitoring,military camouflage,human-machine interaction,and electronic skin due to its ability to provide reversible and fast color changes under applied voltage.With the rapid development and increasing demand for flexible electronics,flexible electrochromic devices(FECDs)that offer smarter and more controllable light modulation hold great promise for practical applications.The electrochromic material(ECM)undergoing color changes during the electrochemical reactions is one of the key components in electrochromic devices.Among the ECMs,viologens,a family of organic small molecules with 1,1'-disubstituted-4,4'-dipyridinium salts,have garnered extensive research interest,due to their well-reversible redox reactions,excellent electron acceptance ability,and the ability to produce multiple colors.Notably,viologen-based FECDs demonstrate color changes in the liquid or semisolid electrolyte layer,eliminating the need for two solid electrodes and thus simplifying the device structure.Consequently,viologens offer significant potential for the development of FECDs with high optical contrast,fast response speed,and excellent stability.This review aims to provide a comprehensive overview of the progress and perspectives of viologen-based FECDs.It begins by summarizing the typical structure and recent exciting developments in viologen-based FECDs,along with their advantages and disadvantages.Furthermore,the review discusses recent advancements in FECDs with additional functionalities such as sensing,photochromism,and energy storage.Finally,the remaining challenges and potential research directions for the future of viologen-based FECDs are addressed.

The Research and Application of the Anti-Interference Techniques of Electronic Device in Power System

This paper presents the study and application of the electronic device anti-interference techniques underhigh voltage and/or heavy current electro-magnetic circumstance in power system.[

Topological Structure-Modulated Collagen Carbon as Two-in-One Energy Storage Configuration toward Ultrahigh Power and Energy Density

Efficient energy storage devices with suitable electrode materials,that integrate high power and high energy,are the crucial requisites of the renewable power source,which have unwrapped new possibilities in the sustainable development of energy and the environment.Herein,a facile collagen microstructure modulation strategy is proposed to construct a nitrogen/oxygen dual-doped hierarchically porous carbon fiber with ultrahigh specific surface area(2788 m^(2)g^(-1))and large pore volume(4.56 cm^(3)g^(-1))via local microfibrous breakage/disassembly of natural structured proteins.Combining operando spectroscopy and density functional theory unveil that the dual-heteroatom doping could effectively regulate the electronic structure of carbon atom framework with enhanced electric conductivity and electronegativity as well as decreased diffusion resistance in favor of rapid pseudocapacitive-dominated Li^(+)-storage(353 mAh g^(-1)at 10 A g^(-1)).Theoretical calculations reveal that the tailored micro-/mesoporous structures favor the rapid charge transfer and ion storage,synergistically realizing high capacity and superior rate performance for NPCF-H cathode(75.0 mAh g^(-1)at 30 A g^(-1)).The assembled device with NPCF-H as both anode and cathode achieves extremely high energy density(200 Wh kg^(-1))with maximum power density(42600 W kg^(-1))and ultralong lifespan(80%capacity retention over 10000 cycles).

The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

Design of Transformer Magnetic Bias Protection Device in High Power Electronic Equipments

As the power electronics technology is widely used in the power system, it may also bring the DC component to the transformer operation, resulting in DC bias and may cause great harm to the transformer. In this article, the device to protect transformer from DC magnetic bias is designed. On the basis of load DC current, a magnetic bias protection device is developed by combination of current sensor, electric information collection circuit, signal filtering circuit, signal modulating circuits, fault feature judging circuit, automatic range tracking circuit, intelligent logic synthesis unit and implementation output circuit. By operating in temperature-rise test equipment in the high power electronic lab, the device is proved with reliability, high sensitivity and worthy of promotion and application.

A Precise Model for Simulation of Temperature Distribution in Power Modules

The interaction between the active chips mounted and the same base plate is considered as a thermoelectrical coupling effect.An approach to coupling effect analysis of a multi-chip system is presented with IGBT as a sample.Finite element method is used to evaluate the temperature distribution in power modules.The precise electrothermal model is obtained by fitting the curve of transient thermal impedance with a finite series of exponential terms,in which,the thermal-coupling effect among chips is considered as a prediction of the highest transient temperature of the chips.This model can be used in many thermal monitoring systems.Both ANSYS and PSPICE si- mulation software have been employed,and the simulation results agree with the experimental ones very well.

A review of the most recent progresses of state-of-art gallium oxide power devices

Until very recently, gallium oxide(Ga_2O_3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of250 cm2/(V·s), yielding a high Baliga's figures-of-merit(FOM) of more than 3000, which is several times higher than GaN and SiC.In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β-Ga_2O_3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances ofβ-Ga_2O_3 based power devices. It will be starting with a brief introduction to the material properties of β-Ga_2O_3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art β-Ga_2O_3 devices, including diodes and FETs are fully discussed and compared. Finally, potential solutions to the challenges of β-Ga_2O_3 are also discussed and explored.

ANN-Based Identification of Steady-State Behavior Parameters of Composite Power Semiconductor Device Model

The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. The identification of model parameters of IGBT in PSPICE using BP neural network is illustrated.

Digital Pulse Width Modulation Control in Power Electronic Circuits Design

The paper mainly focuses on the digital pulse width modulation (DPWM) control techniques for high performance power electronic circuit design. The problem to be solved in this study addresses the DPWM converter design for DC to DC conversion process. The control techniques have been utilized the Fuzzy Logic Rules Base method for proposed SIMULINK model of high performance power electronic circuit. The analytical calculations for real circuit design have been completed based on the mathematical modeling of the system. The results from the developed SIMULINK model confirm the target specifications of the high performance condition for power electronic circuit which was met the objective of this study. The numerical results have been carried out with the help of MATLAB/SIMULINK.

Evaluation of Fatigue Life of Semiconductor Power Device by Power Cycle Test and Thermal Cycle Test Using Finite Element Analysis

To accurately predict the fatigue life of a power device, a fatigue life evaluation method that is based on the power cycle is presented in terms of an algorithm based on a combination of electrical analysis, heat analysis, and stress analysis. In literature, the fatigue life of power devices has been evaluated on the basis of the thermal cycle. This cycle is alternately repeated within a range from a high temperature to a low temperature. In an actual operating environment, however, a power device works in a power cycle that consists of being switched ON and OFF. To accurately predict the fatigue life cycle of a device, then, the evaluation should take account of this important aspect of the power cycle. To verify the utility of the evaluation method presented in this study, the results for a power cycle based on the combined use of electrical analysis, heat analysis, and stress analysis are compared to the results based on the thermal cycle, as found in the literature. Our conclusion is that the fatigue life cycle as estimated by the thermal cycle test is higher than that estimated by the power cycle.

Design and Experimental Investigation for Subsea Control Module Test System

As a core part of subsea production systems,subsea control modules(SCMs)are costly,difficult,and expensive to install and inconvenient to use in underwater maintenance.Therefore,performance and function tests must be carried out before launching SCMs.This study developed a testing device and an SCM test by investigating SCMs and their underwater.The testing device includes four parts:a hydraulic station,an SCM test stand,a signal generating device,and an electronic test unit.First,the basic indices of the testing device were determined from the performance and working parameters of the SCM.Second,the design scheme of the testing device for the SCM was tentatively proposed,and each testing device was designed.Finally,a practical measurement of the SCM,in combination with the hydraulic station,SCM test stand,signal generator,electronic unit,and highpressure water tank,was carried out according to the test requirements.The measurement mainly involved equipment inspection before testing and an experimental test for the SCM.The validity and feasibility of the testing device and method were simultaneously verified through an association test.

Research on power electronic transformer applied in AC/DC hybrid distribution networks

The AC/DC hybrid distribution network is one of the trends in distribution network development, which poses great challenges to the traditional distribution transformer. In this paper, a new topology suitable for AC/DC hybrid distribution network is put forward according to the demands of power grid, with advantages of accepting DG and DC loads, while clearing DC fault by blocking the clamping double sub-module(CDSM) of input stage. Then, this paper shows the typical structure of AC/DC distribution network that is hand in hand. Based on the new topology, this paper designs the control and modulation strategies of each stage, where the outer loop controller of input stage is emphasized for its twocontrol mode. At last, the rationality of new topology and the validity of control strategies are verified by the steady and dynamic state simulation. At the same time, the simulation results highlight the role of PET in energy regulation.

“光储直柔”建筑配电系统应用研究

以某项目为例分析“光储直柔”在建筑物中的应用,并对“光储直柔”系统的应用场景、建筑直流配电系统的关注点及“光储直柔”系统关键设备进行阐述。

一种L波段300W GaN脉冲功率模块

随着第三代半导体GaN器件技术的不断发展,GaN高电子迁移率晶体管(HEMT)在电子系统中逐步得到了广泛应用。研制了一款小型化L波段300 W GaN脉冲功率模块。研发了满足高压脉冲工作条件的GaN HEMT芯片,采用负载牵引技术进行了器件大信号阻抗参数提取,并以此为基础设计了小型化匹配网络进行阻抗变换。基于高压驱动芯片和开关器件芯片设计了小型化高压脉冲调制电路。测试结果表明,在工作频率990~1130 MHz、工作电压50 V、脉冲宽度100μs、占空比10%下,功率模块脉冲输出功率大于300 W,功率附加效率大于53%,功率增益大于38 dB。功率模块尺寸为30 mm×30 mm×8 mm。

电力电子系统中的电磁兼容专辑主编述评

SiC、GaN新一代宽禁带功率半导体在推动电力电子设备快速高频化、高效化和小体积化的同时,更容易干扰敏感负载、影响无线电通讯,乃至危害自身安全、可靠运行,从而给电力电子设备内外部的电磁兼容性能带来极大的压力和挑战。近年来,功率开关器件的射频特性、磁性器件的宽频带电磁模型、开关电源电磁辐射机理、无线电能传输近场特性、新型电磁干扰EMI(electromagnetic interference)滤波器设计成为研究热点,并受到了学术界及工业界的持续关注。《电源学报》特别推出“电力电子系统中的电磁兼容”专辑,以期推进电力电子系统电磁兼容分析与设计领域难点和热点问题的探讨。

高比例分布式电源配电网中低压柔性互联协调规划

柔性互联技术是解决高比例分布式电源(distributed generation,DG)配电网面临诸多问题的有效手段之一。提出了一种基于多层优化的配电网中压与低压柔性互联协调规划方法。首先,建立基于电力电子柔性互联设备(flexible interconnected devices,FID)的中低压柔性互联配电网潮流模型。然后,构建三层协调规划模型,上层以低压FID年运行成本及台区变压器负载率的年方差最小为目标,中层以中压FID年运行成本及从上级电网年购电成本最小为目标,分别决策低压和中压FID的安装位置与容量,下层以各场景的从上级电网购电成本最小为目标优化系统运行,并采用自适应粒子群优化和二阶锥规划相结合的混合算法求解。最后,采用含高比例DG的IEEE 33节点配电网进行算例分析,通过柔性互联规划系统的年综合运行成本降低了19.01%,台区变压器负载率的年方差减少了82.59%,验证了所提规划模型的有效性。

一种基于磁耦合转移原理的10kV直流断路器

直流电流没有自然过零点,因此开断直流短路电流比开断交流短路电流更为困难。本文介绍一种基于磁耦合电流转移原理的中压10kV直流断路器拓扑方案,该断路器可实现对15kA直流电流的快速开断。首先,对直流断路器原理和控制逻辑进行介绍;然后,根据拓扑方案提出快速机械开关、电力电子开关、磁耦合装置等核心部件的设计思路;最后,搭建仿真模型对该方案进行仿真分析,模拟不同工况下的开断情况,仿真结果验证了该方案的有效性。