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Leakage Reduction Using DTSCL and Current Mirror SCL Logic Structures for LP-LV Circuits
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作者 Sanjeev Rai Ram Awadh Mishra Sudarshan Tiwari 《Circuits and Systems》 2013年第1期20-28,共9页
This paper presents a novel approach to design robust Source Coupled Logic (SCL) for implementing ultra low power circuits. In this paper, we propose two different source coupled logic structures and analyze the perfo... This paper presents a novel approach to design robust Source Coupled Logic (SCL) for implementing ultra low power circuits. In this paper, we propose two different source coupled logic structures and analyze the performance of these structures with STSCL (Sub-threshold SCL). The first design under consideration is DTPMOS as load device which analyses the performance of Dynamic Threshold SCL (DTSCL) Logic with previous source coupled logic for ultra low power operation. DTSCL circuits exhibit a better power-delay Performance compared with the STSCL Logic. It can be seen that the proposed circuit provides 56% reduction in power delay product. The second design under consideration uses basic current mirror active load device to provide required voltage swing. Current mirror source coupled logic (CMSCL) can be used for high speed operation. The advantage of this design is that it provides 54% reduction in power delay product over conventional STSCL. The main drawback of this design is that it provides a higher power dissipation compared to other source coupled logic structures. The proposed circuit provides lower sensitivity to temperature and power supply variation, with a superior control over power dissipation. Measurements of test structures simulated in 0.18 μm CMOS technology shows that the proposed DTSCL logic concept can be utilized successfully for bias currents as low as 1 pA. Measurements show that existing standard cell libraries offer a good solution for ultra low power SCL circuits. Cadence Virtuoso schematic editor and Spectre Simulation tools have been used. 展开更多
关键词 CMOS Integrated CIRCUITS CMOS LOGIC Circuit Dynamic Threshold MOS (DTMOS) power-delay Product Source-Coupled LOGIC (SCL) SUB-THRESHOLD CMOS SUB-THRESHOLD SCL Ultra-Low-Power CIRCUITS Weak Inversion LP-LV(Low Power-Low Voltage)
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高功放高压联锁电路改进与测试
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作者 金华松 邱冬冬 刘斯亮 《现代电子技术》 2012年第19期155-157,共3页
高压联锁性能的好坏直接影响设备能否正常工作。通过分析CPI高功放(HPA)的延时加高压程序、高压联锁电路和交流延时器工作原理,研究出一种新改进的高压联锁电路方案和用于交流延时器的测试方法。分析阐述表明,该方案和测试方法克服了CP... 高压联锁性能的好坏直接影响设备能否正常工作。通过分析CPI高功放(HPA)的延时加高压程序、高压联锁电路和交流延时器工作原理,研究出一种新改进的高压联锁电路方案和用于交流延时器的测试方法。分析阐述表明,该方案和测试方法克服了CPI高功放的高压联锁方案的弊端。另外,根据分析结果设计了延时测试电路,它可对交流延时器性能参数进行定量测试。 展开更多
关键词 CPI 高功放 高压联锁 交流延时器
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Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV
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作者 Tanu Goyal Manoj Kumar Majumder Brajesh Kumar Kaushik 《Journal of Semiconductors》 EI CAS CSCD 2015年第6期99-104,共6页
Through-silicon vias (TSVs) have provided an attractive solution for three-dimensional (3D) integrated devices and circuit technologies with reduced parasitic losses and power dissipation, higher input-output (I/... Through-silicon vias (TSVs) have provided an attractive solution for three-dimensional (3D) integrated devices and circuit technologies with reduced parasitic losses and power dissipation, higher input-output (I/O) den- sity and improved system performance. This paper investigates the propagation delay and average power dissipation of single-walled carbon nanotube bundled TSVs having different via radius and height. Depending on the physical configuration, a comprehensive and accurate analytical model of CNT bundled TSV is employed to represent the via (vertical interconnect access) line of a driver-TSV-load (DTL) system. The via radius and height are used to estimate the bundle aspect ratio (AR) and the cross-sectional area. For a fixed via height, the delay and the power dissipation are reduced up to 96.2% using a SWCNT bundled TSV with AR = 300 : 1 in comparison to AR = 6:1. 展开更多
关键词 carbon nanotube through-silicon vias equivalent RLC circuit model propagation delay power-delay product area-delay product
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