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Tunable superconductivity in parent cuprate Pr_2CuO_(4±δ) thin films 被引量:1
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作者 Xinjian Wei Ge He +6 位作者 Wei Hu Xu Zhang Mingyang Qin Jie Yuan Beiyi Zhu Yuan Lin Kui Jin 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第5期276-281,共6页
We studied the role of oxygen in Pr2 CuO_(4±δ) thin films fabricated by the polymer assisted deposition method. The magnetoresistance and Hall resistivity of Pr2 CuO_(4±δ) samples were systematically inves... We studied the role of oxygen in Pr2 CuO_(4±δ) thin films fabricated by the polymer assisted deposition method. The magnetoresistance and Hall resistivity of Pr2 CuO_(4±δ) samples were systematically investigated. It was found that with decreasing oxygen content, the low-temperature Hall coefficient(RH) and magnetoresistance changed from negative to positive, similar to those with the increase of Ce-doped concentration in R_(2-x)Ce_x CuO_4 (R = La, Nd, Pr, Sm, Eu). In addition, we observed that the dependence of the superconducting critical temperature Tc with RH for the Pr_(2-x) Ce_x CuO_4 perfectly overlapped with that of Pr_2 CuO_(4±δ) . These findings point to the fact that the doped electrons induced by the oxygen removal are responsible for the superconductivity of the T-phase parent compounds. 展开更多
关键词 pr2cuo4±δ THIN film SUPERCONDUCTIVITY polymer assisted DEPOSITION
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La_(2)CuO_(4)阴极薄膜的相转变及其对电化学性能的影响 被引量:1
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作者 纪全增 孟君玲 +3 位作者 王浩聪 安涛 刘孝娟 孟健 《应用化学》 CAS CSCD 北大核心 2021年第8期976-985,共10页
通过调控薄膜的沉积条件,探索La_(2)CuO_(4)的晶体结构对电化学性质的影响。采用脉冲激光沉积设备在YSZ(100)单晶基底上沉积一系列La_(2)CuO_(4)薄膜,通过调节沉积时的氧压,制备了不同晶体结构的La_(2)CuO_(4)薄膜。研究表明,沉积氧压... 通过调控薄膜的沉积条件,探索La_(2)CuO_(4)的晶体结构对电化学性质的影响。采用脉冲激光沉积设备在YSZ(100)单晶基底上沉积一系列La_(2)CuO_(4)薄膜,通过调节沉积时的氧压,制备了不同晶体结构的La_(2)CuO_(4)薄膜。研究表明,沉积氧压的变化使薄膜晶体结构发生相转变,从T′相→T*相→T相。T′相为沿着c轴择优生长的单晶四方相,且表现出较大的界面极化电阻,在850℃的Rp值为2.351Ω·cm^(2)。T*相为T′相和T相的混合相,在850℃的电阻值介于T′相和T相之间。T相为正交相,相对于其它相结构表现出较低的界面极化电阻,沉积氧压为26.60 Pa下制备的T相在850℃的电阻值为0.783Ω·cm^(2),比T′相的电阻值低近67%。并且,正交相表面有相对较高的氧空位浓度,有利于氧气的吸附和扩散,加速了阴极的氧还原反应。因此,具有正交对称性的La_(2)CuO_(4)的电化学性质优于其它对称性。这一结果也表明可以通过改变薄膜材料的晶体结构,降低界面极化电阻,提高阴极薄膜的电化学性能。 展开更多
关键词 La_(2)cuo_(4) 阴极薄膜 相转变 电化学性能
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