Pressure-sensitive Transistor Fabricated from an Organic Semiconductor 1,1＇-Dibutyl-4,4＇-bipyridinium Diiodide

Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1＇-dibutyl-4,4＇-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force.

A pressure-sensitive rheological origin of high friction angles of granular matter observed in NASA–MGM project

An abnormally high peak friction angle of Ottawa sand was observed in(National Aeronautics and Space Administration) NASA–(Mechanics of Granular Materials) MGM tests in microgravity conditions on the space shuttle. Previous investigations have been unsuccessful in providing a constitutive insight into this behavior of granular materials under extremely low effective stress conditions. Here, a recently proposed unified constitutive model for transient rheological behavior of sand and other granular materials is adopted for the analytical assessment of high peak friction angles. For the first time, this long-eluded behavior of sand is attributed to a hidden rheological transition mechanism, that is not only rate-sensitive, but also pressure-sensitive. The NASA–MGM microgravity conditions show that shear-tests of sand can be performed under abnormally low confining stress conditions. The pressure-sensitive behavior of granular shearing that is previously ignored is studied based on the μ(I) rheology and its variations. Comparisons between the model and the NASA microgravity tests demonstrate a high degree of agreement. The research is highly valid for pressure-sensitive and rate-dependent problems that occur during earthquakes, landslides, and space exploration.

Force and impulse multi-sensor based on flexible gate dielectric field effect transistor

Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.

The asymptotic field of mode Ⅰ quasi-static crack growth on the interface between a rigid and a pressure-sensitive material

A mechanical model of the quasi-static interface of a mode I crack between a rigid and a pressure-sensitive viscoelastic material was established to investigate the mechanical characteristic of ship-building engineering hi-materials. In the stable growth stage, stress and strain have the same singularity, ie （σ, ε） ∝ r^-1/（n-1）. The variable-separable asymptotic solutions of stress and strain at the crack tip were obtained by adopting Airy＇s stress function and the numerical results of stress and strain in the crack-tip field were obtained by the shooting method. The results showed that the near-tip fields are mainly governed by the power-hardening exponent n and the Poisson ratio v of the pressure-sensitive material. The fracture criterion of mode I quasi-static crack growth in pressure-sensitive materials, according to the asymptotic analyses of the crack-tip field, can be viewed from the perspective of strain.

Numerical Simulation of Liquid-Solid Coupling in Multi-Angle Fractures in Pressure-Sensitive Reservoirs

This study clarifies the seepage characteristics of complex fractured pressure-sensitive reservoirs,and addresses a common technological problem,that is the alteration of the permeability degree of the reservoir bed(known to be responsible for changes in the direction and velocity of fluid flows between wells).On the basis of a new pressuresensitive equation that considers the fracture directional pressure-sensitive effect,an oil-gas-water three-phase seepage mathematical model is introduced,which can be applied to pressure-sensitive,full-tensor permeability,ultralow-permeability reservoirs with fracture-induced anisotropy.Accordingly,numerical simulations are conducted to explore the seepage laws for ultralow-permeability reservoirs.The results show that element patterns have the highest recovery percentage under a fracture angle of 45°.Accounting for the pressure-sensitive effect produces a decrease in the recovery percentage.Several patterns are considered:inverted five-seven-and nine-spot patterns and a cross-row well pattern.Finally,two strategies are introduced to counteract the rotation of the direction of the principal permeability due to the fracture directional pressure-sensitive effect.

Pressure-sensitive plasticity of lithiated silicon in Li-ion batteries

Lithiation-induced plasticity is a key factor that enables Si electrodes to maintain long cycle life in Li-ion batteries. We study the plasticity of various lithiated sili-con phases based on first-principles calculations and iden-tify the linear dependence of the equivalent yield stress on the hydrostatic pressure. Such dependence may cause the compression-tension asymmetry in an amorphous Si thin film electrode from a lithiation to delithiation cycle, and leads to subsequent ratcheting of the electrode after cyclic lithiation. We propose a yield criterion of amorphous lithi-ated silicon that includes the effects of the hydrostatic stress and the lithiation reaction. We further examine the micro-scopic mechanism of deformation in lithiated silicon under mechanical load, which is attributed to the flow-defects mediated local bond switching and cavitation. Hydrostatic compression confines the flow defects thus effectively strength-ens the amorphous structure, and vice versa.

Element Analysis of Instrumented Sharp Indentations into Pressure-sensitive Materials

Finite element analysis was carried out to investigate the conical indentation response of elastic-plastic solids within the framework of the hydrostatic pressure dependence and the power law strain hardening. A large number of 40 difierent combinations of elasto-plastic properties with n ranging from 0 to 0.5 and σy/E ranging from 0.0014 to 0.03 were used in the computations. The loading curvature C and the average contact pressure Pave were considered within the concept of representative strains and the dimensional analysis.Dimensionless functions associated with these two parameters were formulated for each studied value of the pressure sensitivity. The results for pressure sensitive materials lie between those for Von Mises materials and the elastic model.

Roles of the ocular pressure, pressure-sensitive ion channel, and elasticity in pressure-induced retinal diseases

The intraocular pressure inside the human eye maintains 10–21 mmHg above the atmospheric pressure.Elevation of intraocular pressure is highly correlated with the retinopathy in glaucoma,and changes in the exterior pressure during mountain hiking,air traveling,and diving may also induce vision decline and retinopathy.The pathophysiological mechanism of these pressure-induced retinal disorders has not been completely clear.Retinal neurons express pressure-sensitive channels intrinsically sensitive to pressure and membrane stretch,such as the transient receptor potential channel(TRP)family permeable to Ca^2+and Na^+and the two-pore domain K channel family.Recent data have shown that pressure excites the primate retinal bipolar cell by opening TRP vanilloid 4 to mediate transient depolarizing currents,and TRP vanilloid 4 agonists enhance the membrane excitability of primate retinal ganglion cells.The eyeball wall is constructed primarily by the sclera and cornea of low elasticity,and the flow rate of the aqueous humor and intraocular pressure both fluctuate,but the mathematical relationship between the ocular elasticity,aqueous humor volume,and intraocular pressure has not been established.This review will briefly review recent literature on the pressure-related retinal pathophysiology in glaucoma and other pressure-induced retinal disorders,the elasticity of ocular tissues,and pressure-sensitive cation channels in retinal neurons.Emerging data support the global volume and the elasticity and thickness of the sclera and cornea as variables to affect the intraocular pressure level like the volume of the aqueous humor.Recent results also suggest some potential routes for TRPs to mediate retinal ganglion cell dysfunction:TRP opening upon intraocular pressure elevation and membrane stretch,enhancing glutamate release from bipolar cells,increasing intracellular Na^+,Ca^2+concentration in retinal ganglion cells and extracellular glutamate concentration,inactivating voltage-gated Na^+channels,and causing excitotoxicity and dysfunction of retinal ganglion cells.Further studies on these routes likely identify novel targets and therapeutic strategies for the treatment of pressure-induced retinal disorders.

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.

High-Performance Organic Field-Effect Transistors Based on Two-Dimensional Vat Orange 3 Crystals

The exploration and research of low-cost,environmentally friendly,and sustainable organic semiconductor materials are of immense significance in various fields,including electronics,optoelectronics,and energy conversion.Unfortunately,these semiconductors have almost poor charge transport properties,which range from∼10^(−4) cm^(2)·V^(−1)·s^(−1) to∼10^(−2) cm^(2)·V^(−1)·s^(−1).Vat orange 3,as one of these organic semiconductors,has great potential due to its highly conjugated structure.We obtain high-quality multilayered Vat orange 3 crystals with two-dimensional(2D)growth on h-BN surfaces with thickness of 10–100 nm using physical vapor transport.Raman’s results confirm the stability of the chemical structure of Vat orange 3 during growth.Furthermore,by leveraging the structural advantages of 2D materials,an organic field-effect transistor with a 2D vdW vertical heterostructure is further realized with h-BN encapsulation and multilayered graphene contact electrodes,resulting in an excellent transistor performance with On/Off ratio of 104 and high field-effect mobility of 0.14 cm^(2)·V^(−1)·s^(−1).Our results show the great potential of Vat orange 3 with 2D structures in future nano-electronic applications.Furthermore,we showcase an approach that integrates organic semiconductors with 2D materials,aiming to offer new insights into the study of organic semiconductors.

Dynamic response of a thermal transistor to time-varying signals

Thermal transistor,the thermal analog of an electronic transistor,is one of the most important thermal devices for microscopic-scale heat manipulating.It is a three-terminal device,and the heat current flowing through two terminals can be largely controlled by the temperature of the third one.Dynamic response plays an important role in the application of electric devices and also thermal devices,which represents the devices’ability to treat fast varying inputs.In this paper,we systematically study two typical dynamic responses of a thermal transistor,i.e.,the response to a step-function input(a switching process)and the response to a square-wave input.The role of the length L of the control segment is carefully studied.It is revealed that when L is increased,the performance of the thermal transistor worsens badly.Both the relaxation time for the former process and the cutoff frequency for the latter one follow the power-law dependence on L quite well,which agrees with our analytical expectation.However,the detailed power exponents deviate from the expected values noticeably.This implies the violation of the conventional assumptions that we adopt.

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Two-dimensional(2D)transition metal dichalcogenides(TMDs)allow for atomic-scale manipulation,challenging the conventional limitations of semiconductor materials.This capability may overcome the short-channel effect,sparking significant advancements in electronic devices that utilize 2D TMDs.Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance.This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor.It delves into the impacts of miniaturization,including the reduction of channel length,gate length,source/drain contact length,and dielectric thickness on transistor operation and performance.In addition,this review provides a detailed analysis of performance parameters such as source/drain contact resistance,subthreshold swing,hysteresis loop,carrier mobility,on/off ratio,and the development of p-type and single logic transistors.This review details the two logical expressions of the single 2D-TMD logic transistor,including current and voltage.It also emphasizes the role of 2D TMD-based transistors as memory devices,focusing on enhancing memory operation speed,endurance,data retention,and extinction ratio,as well as reducing energy consumption in memory devices functioning as artificial synapses.This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices.This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications.It underscores the anticipated challenges,opportunities,and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

One memristor–one electrolyte-gated transistor-based high energy-efficient dropout neuronal units

Artificial neural networks(ANN) have been extensively researched due to their significant energy-saving benefits.Hardware implementations of ANN with dropout function would be able to avoid the overfitting problem. This letter reports a dropout neuronal unit(1R1T-DNU) based on one memristor–one electrolyte-gated transistor with an ultralow energy consumption of 25 p J/spike. A dropout neural network is constructed based on such a device and has been verified by MNIST dataset, demonstrating high recognition accuracies(> 90%) within a large range of dropout probabilities up to40%. The running time can be reduced by increasing dropout probability without a significant loss in accuracy. Our results indicate the great potential of introducing such 1R1T-DNUs in full-hardware neural networks to enhance energy efficiency and to solve the overfitting problem.

Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors

The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects.We analyzed the influence of weak magnetic fields,quantum effects,device size,and temperature on the instability of plasma waves under asymmetric boundary conditions numerically.The results show that the magnetic fields,quantum effects,and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency.Additionally,we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment.The numerical results and accompanying images obtained from our simulations provide support for the above conclusions.

Device design principles and bioelectronic applications for flexible organic electrochemical transistors

Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications.

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

Transient Response and Ionic Dynamics in Organic Electrochemical Transistors

The rapid development of organic electrochemical transistors(OECTs)has ushered in a new era in organic electronics,distinguishing itself through its application in a variety of domains,from high-speed logic circuits to sensitive biosensors,and neuromorphic devices like artificial synapses and organic electrochemical random-access memories.Despite recent strides in enhancing OECT performance,driven by the demand for superior transient response capabilities,a comprehensive understanding of the complex interplay between charge and ion transport,alongside electron–ion interactions,as well as the optimization strategies,remains elusive.This review aims to bridge this gap by providing a systematic overview on the fundamental working principles of OECT transient responses,emphasizing advancements in device physics and optimization approaches.We review the critical aspect of transient ion dynamics in both volatile and non-volatile applications,as well as the impact of materials,morphology,device structure strategies on optimizing transient responses.This paper not only offers a detailed overview of the current state of the art,but also identifies promising avenues for future research,aiming to drive future performance advancements in diversified applications.

Layer by Layer Self-assembly Fiber-based Flexible Electrochemical Transistor

Poly(3,4-ethylenedioxyethiophene)-polystyrene sulfonic acid(PEDOT:PSS)/polyallyl dimethyl ammonium chloride modified reduced graphene oxide(PDDA-rGO)was layer by layer self-assembled on the cotton fiber.The surface morphology and electric property was investigated.The results confirmed the dense membrane of PEDOT:PSS and the lamellar structure of PDDA-rGO on the fibers.It has excellent electrical conductivity and mechanical properties.The fiber based electrochemical transistor(FECTs)prepared by the composite conductive fiber has a maximum output current of 8.7 mA,a transconductance peak of 10 mS,an on time of 1.37 s,an off time of 1.6 s and excellent switching stability.Most importantly,the devices by layer by layer self-assembly technology opens a path for the true integration of organic electronics with traditional textile technologies and materials,laying the foundation for their later widespread application.

Photo-driven fin field-effect transistors

The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only detect light within a limited wavelength range(<1100 nm)due to its bandgap of 1.12 eV,which restricts its utility in the infrared detection realm.Herein,a photo-driven fin field-effect transistor is presented,which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection.This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting.The lead sulfide film wraps the silicon channel to form a“three-dimensional”infrared-sensitive gate,enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance.At room temperature,this device realizes a broadband photodetection from visible(635 nm)to short-wave infrared regions(2700 nm),surpassing the working range of the regular indium gallium arsenide and germanium detectors.Furthermore,it exhibits low equivalent noise powers of 3.2×10^(-12) W·Hz^(-1/2) and 2.3×10^(-11) W·Hz^(-1/2) under 1550 nm and 2700 nm illumination,respectively.These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection.