Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse

The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.

A New Analyzing Method of Single Event Latch-Up Protection Circuit Based on Current Comparing and Its Performance Verification

Single event latch-up (SEL) is a significant issue for electronics design in space application, which would cause large currents in electronic devices, and may lead to burning out of devices. A new monitoring circuit based on current-comparing method is designed to protect the electronics away from SEL’s damage in radiation environment. The response time of protection circuit has been analyzed. The signal simulation results indicated that the operating time of the SEL protection circuit is dependent on the action time of current comparator and system application recovery time. The function of the monitoring circuit protection device away from SEL’s damage has validated through experiment at last.

Protection of ±500 kV HVDC Double-circuit Converter Station from Lightning Induced Overvoltage

In order to obtain reasonable schemes of arrester in converter stations, the arrester scheme of "Xiluodu-Guangdong HVDC ± 500 kV double circuit transmission" project against lighting induced overvoltage, which was designed according to the main principle of lightning protection in converter station, is discussed. A calculation of the lighting induced overvoltage in Zhaotong converter station un- der various operation modes is performed with ATP-EMTP software, then the surge arrester configuration of the converter station is decided, and the arrester protection schemes of smoothing reactor and neutral line are studied. It is concluded that additional protection is necessary because of the relatively large gap between protected disconnecting switch and arrester of metallic return transfer bus. Plus, the smoothing reactor (SR) arrester near the valve hall could be removed to improve the scheme’s economic performance.

Practical Drive and Protection Circuits for the IGBT

The essential requirements of IGBT drive circuit is expounded.The short-circuit characteristic and over-current protection of the IGBT are described in detail.Finally,the practical drive and protection circuits are designed.The practical results show that the circuit is good in performance.

Research on IGBT Drive Circuit Based on 2QD30A17K-I Driver

The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.

A New Method of Early Short Circuit Detection

To reduce the pressure on contacts and circuit breaker and realize the zone selective interlocking (ZSI) function above the instantaneous protection threshold (e.g., >10In), the short circuit current needs to be early detected. The state-of–art of early short circuit detection (ESCD) method is reviewed. Based on the equivalent model of the short circuit, a new method based on the current and its integration is proposed. The prospective current value can be detected in the early stage of the short circuit. According to the evaluation result, the short circuit current can be early forecasted with the proposed method.

基于钳位型断路器的柔直系统控保协同技术

柔性直流系统以其在输电领域的巨大优势而获得广泛应用.但在直流系统中,短路故障的强冲击性与电力电子器件的脆弱性之间的矛盾异常尖锐,现有保护策略难以同时满足高速动性与高可靠性的要求.本文从控保协同思想出发,基于一种电压钳位原理的直流断路器,提出一种新的故障处理模式,初步探究在柔直系统中控制与保护深度融合的可能性.当发生短路故障时,投入断路器和换流器相配合的限流功能,一方面限制电力电子器件的过流,解决其脆弱性问题;另一方面为保护提供边界,辅助实现故障的快速定位.在甄别出故障线路后,利用断路器的故障切除功能将故障隔离.此方案同时实现了故障限流、保护边界和故障切除3项功能,可有效缓减由于模块化多电平换流器(modular multilevel converter,MMC)器件脆弱性所带来的一系列保护问题.在PSCAD/EMTDC中搭建四端双极柔性直流电网模型,仿真结果表明,本控保协同方案能在5 ms内准确识别并隔离故障线路,而且具有较强的耐受过渡电阻能力.

高压直流输电保护定值整定依据及配合关系探讨

在中国30余年的高压直流输电工程实践中形成了一套高压直流输电保护系统定值体系。文中结合近年来在应用中出现的复杂案例,对以下保护的定值整定依据开展了进一步探讨:阀短路保护启动定值需避开与换流阀并联的阻容回路的充电电流;换流器过流保护过负荷段定值整定依据是直流控制系统失控造成直流运行电流超过控制的过负荷目标值,以及控制目标电流超过所设定的运行时间;直流低电压保护阈值及延时定值的整定需兼顾保护的后备功能,不确保与换相失败保护双桥原理长延时段配合。另外,深入探讨了交直流系统间、金属回线运行方式下直流保护间,以及高压线路再启动与低压再启动间的定值配合问题。最后,提出了高压直流输电保护系统的定值及定值间的配合应有一定的规范性和适度的灵活性的建议。

电快速瞬变脉冲群串扰耦合分析及防护措施研究

EFT产生的瞬态脉冲干扰可通过电缆耦合进入电子系统的内部,损伤电子设备。为降低瞬态脉冲对电缆串扰耦合的影响,首先利用电磁仿真软件CST建立平行电缆耦合仿真模型,当电压等级为4 kV时,测试电缆的近端串扰电压达到71.2 V,远高于部分敏感器件的阈值;然后通过分析电快速瞬变脉冲群的频谱特性,瞬态脉冲的干扰能量主要集中在1~10 MHz的范围内;最后利用仿真软件Filter Solution设计合理的防护电路。结果表明,防护电路能有效降低瞬态脉冲对电路的影响。

Protection of Low Voltage CIGRE Distribution Network

High quality electricity services are the prime objectives in the modern power systems around the world. One of the main players to achieve this is the protection of the system which needs to be fast, reliable and cost effective. The study about the protection of the Low Voltage (LV) CIGRE distribution grid and networks like this has been proposed in this paper. The main objective of this paper is to develop protection against short circuit faults which might appear anywhere in the network. The protection of the power networks that comprises of renewable energy generation units is complicated because of the bidirectional flow of the current and is a challenge for the protection engineers. The selection of the protection devices in this paper is made to protect the network against faults in grid connected and island mode of operation. Ultra-fast fuses are proposed in order to protect the inverters used for Photovoltaic (PV) and battery applications. The disconnection of the PV solar panels when in island mode is made by proposing switch disconnecting devices. ABB is currently using these kinds of disconnection devices for the purpose of protecting solar panels against over voltages in the case of islanding. The over speed protection of the existing Wind Turbine Generator (WTG) in the CIGRE network in case of grid loss is also proposed in this paper.

适用于SiC MOSFET的漏源电压积分自适应快速短路保护电路研究

SiC MOSFET因其高击穿电压、高开关速度、低导通损耗等性能优势而被广泛应用于各类电力电子变换器中。然而,由于其短路耐受时间仅为2~7μs,且随母线电压升高而缩短,快速可靠的短路保护电路已成为其推广应用的关键技术之一。为应对不同母线电压下的Si C MOSFET短路故障,文中提出一种基于漏源电压积分的自适应快速短路保护方法(drain-sourcevoltageintegration-basedadaptivefast short-circuit protection method,DSVI-AFSCPM),研究所提出的DSVI-AFSCPM在硬开关短路(hardswitchingfault,HSF)和负载短路(fault under load,FUL)条件下的保护性能,进而研究不同母线电压对DSVI-AFSCPM的作用机理。同时,探究Si CMOSFET工作温度对其响应速度的影响。最后,搭建实验平台,对所提出的DSVI-AFSCPM在发生硬开关短路和负载短路时不同母线电压、不同工作温度下的保护性能进行实验测试。实验结果表明,所提出的DSVI-AFSCPM在不同母线电压下具有良好的保护速度自适应性,即母线电压越高,短路保护速度越快,并且其响应速度受Si CMOSFET工作温度影响较小,两种短路工况下工作温度从25℃变化到125℃,短路保护时间变化不超过90 ns。因此,该文为Si CMOSFET在不同母线电压下的可靠使用提供一定技术支撑。

高压大功率SiC MOSFETs短路保护方法

碳化硅(SiC)MOSFETs短路承受能力弱,研究其短路保护方法成为保障电力电子设备安全运行的重要课题。现有方法大多围绕低压小功率SiC MOSFETs,然而随着电压和功率等级的提升,器件特性有所差异,直接套用以往设计难以实现高压大功率SiC MOSFETs的快速、可靠保护。该文首先详细研究了几种常用短路检测方法;其次基于高压大功率SiC MOSFETs器件特性,深入对比分析了不同短路检测方法的适用性,提出一种阻容式漏源极电压检测和栅极电荷检测相结合的短路保护方法;最后搭建了实验平台验证所提方法的可行性。结果表明,提出的方法在硬开关短路故障(hard switching fault,HSF)下,保护响应时间缩短了1.4μs,短路能量降低了62.5%;且能可靠识别负载短路故障(fault under load,FUL)。

基于Crowbar与Buck电路对双馈风力发电机LVRT的研究

在双馈风力发电系统中,当电网电压跌落较严重时,传统的改变励磁的控制策略或仅在转子侧引入撬棒(Crowbar)保护电路,已不能满足电压跌落时低压穿越(LVRT)的要求,论文在直流侧引入了卸荷(Buck)保护电路协同转子侧主动式Crowbar保护电路工作,更有助于跌落电压的恢复,大大提高了并网电压低压穿越的能力。首先对双馈风力发电机(DFIG)建立数学模型并进行暂态特性分析,推导相关故障电压电流表达式,然后对Crowbar保护电路和Buck保护电路阻值进行整定。通过仿真分析验证了组合保护电路的可行性与优越性。

基于机-电-磁-流整体耦合的油阻尼断路器保护特性的容差设计

油阻尼断路器的主要特点是在电路发生短路、过载等情况时能够自动脱扣,断开电路,从而保护人员和设备的安全,常用于变电站等场所。文章在以往对油阻尼断路器油阻尼力、电磁铁静态特性、操作机构性能等研究的基础上,构建一个基于机-电-磁-流多体多自由度多场耦合的一体化虚拟样机整体耦合模型;接着对该整体耦合模型的保护特性进行了仿真与分析,通过仿真得到了不同电流倍数下动触头的分断特性,并通过实验验证了整体耦合模型和仿真结果的正确性;最后,为减小产品保护特性的分散程度,提高油阻尼断路器的稳定性,文中结合稳健容差设计技术,选取不同电流倍数下触头的断开时间作为目标函数,以极靴半径、细铁芯半径、粗铁芯半径、粗铁芯高度作为关键设计参数,通过正交试验和贡献率分析法对目标函数进行容差分配,使得触头断开时间的分散度比原来减少39.165%。研究成果将会对电器产品的研发提供理论指导。

Short-circuit Current Characteristics of Wind Generators

To study the effects of wind generators on distribution system protection,the short-circuit current(SCC) characteristics of wind generators is important.Although there are many researches on the issue,a clear agreement has not been reached so far.The SCC characteristics for different wind generators are studied.PSCAD simulation is performed in the same system integrated with different kinds of wind generators,and their results are compared with those reported in IEEE papers.The detection possibility by overcurrent relay(OCR)is discussed based on the simulation results.

特勒根似功率保护在同塔双回交流输电线路中的应用

随着我国电网规模快速扩张,输电通道资源日渐紧缺,同塔多回输电技术逐渐得到广泛应用。超/特高压远距离输电线路一般以差动保护作为双重主保护,与纵联距离/方向保护构成双重化配置。但用于同塔双回输电线路时,分布电容电流将影响差动保护的灵敏度;同时,由于双回线线间和相间较强的电磁耦合作用,线间互感的影响将会降低纵联距离、纵联方向保护判断的正确性,导致原来的保护配置方案难以直接应用。将特勒根似功率保护原理推广至同塔双回线路,提出了一种基于特勒根似功率定理的同塔双回输电线路纵联保护方法,能够不受双回线内部复杂电磁耦合、分布电容、系统负荷等影响,并验证了该保护的对时方案在双回线路中的适用性。采用MATLAB/Simulink仿真软件搭建1000kV特高压同塔双回输电线示范工程模型,经大量仿真实验,验证了所提保护方法的有效性。

基于Simulink/MATLAB的实际地铁线路供电系统短路试验仿真分析

直流牵引供电系统在城市轨道交通中扮演着关键角色,其安全可靠的运行对整个城市轨道交通系统的运行至关重要。该文首先介绍地铁牵引供电系统的结构和功能,并建立地铁外部交流电源、整流机组和牵引网络的仿真模型。该仿真模型根据实际地铁牵引供电系统的结构和参数进行构建,旨在研究不同短路情况下的短路特性,包括电源出口短路、近距离短路和远距离短路。通过评估供电系统在短路故障下的稳定性和可靠性,得出若干研究结果。这些结果为地铁供电系统选择合适的一次设备提供理论依据,有助于确保城市轨道交通供电系统的稳定性和可靠性。

一种灵活可靠的IGBT驱动电路设计

在当今减碳排放背景下,全控型功率器件IGBT以优异的性能广泛用于各种变流器中,有效可靠的驱动电路对IGBT的安全工作至关重要,特别是大功率应用场合。针对大功率IGBT应用中对驱动电路灵活可靠的要求,设计了一种基于智能集成光耦驱动器ACPL-332J的IGBT驱动保护电路,分析了ACPL-332J的各项参数,并以ACPL-332J为核心设计了驱动电路。以英飞凌FF600R12ME4为应用IGBT,通过双脉冲试验、短路试验验证了设计电路驱动及保护的有效性。

模拟短路试验核对变电所保护极性的方法探讨

近几年,因保护回路接线错误造成保护拒动、误动的事件频发。通过实际案例,从理论、实际多角度分析故障发生的原因,提出一种新型短路试验方法,并应用于实际验证其可靠性,以期为变配电设备运维、新线开通提供参考。

基于光纤漏磁场测量的变压器磁平衡保护研究

针对变压器绕组变形、轻微匝间故障等早期故障,传统的保护方案一般难以进行有效的诊断,根据变压器绕组漏磁场变化可以灵敏地检测出绕组的早期故障,但缺乏适用于工程应用的绕组漏磁场分析的解析方法和在线测量方案。针对这些问题,该文计算了简化模型下的变压器绕组漏磁场分布,通过测量绕组上、下表面和中部的漏磁感应强度,提出故障分量磁平衡保护的整定方法和判别逻辑。最后,建立了Ansys的仿真模型和动模实验模型,验证了保护方案具有不受负荷变化及不受励磁涌流的影响,并且区内故障检测灵敏度高的优点。