Optimization of large-area YBa_(2)Cu_(3)O_(7-δ)thin films by pulsed laser deposition for planar microwave devices

This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance(MR)effect in a low static magnetic field environment at room temperature.However,how to obtain a large room-temperature negative MR effect in them remains to be studied.In this paper,by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side,we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment,but not in a static low magnetic field environment.Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory,we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field.This theoretical analytical model is further confirmed by regulating the geometry size of the device.Our work sheds light on the development of novel magnetic sensing,magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Investigating the Thermal Stress of Millisecond Pulsed Laser Irradiation on Charge-Coupled Devices

In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation.

Pulse Laser Deposition of HfO_(2)Nanoporous-Like Structure,Physical Properties for Device Fabrication

The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor （1 T1R） resistance random access memory （RRAM） device. All the devices are operated under the same test conditions, except for the initial formation process with different modes. Based on the statistical results, the high resistance state （FIRS） under the dc forming mode shows a lower value with better distribution compared with that under the pulse mode. One of the possible reasons for such a phenomenon originates from different properties of conductive filament （CF） formed in the resistive switching layer under two different modes. For the dc forming mode, the formed filament is thought to be continuous, which is hard to be ruptured, resulting in a lower HRS. However, in the case of pulse forming, the filament is discontinuous where the transport mechanism is governed by hopping. The low resistance state （LRS） can be easily changed by removing a few trapping states from the conducting path. Hence, a higher FIRS is thus observed. However, the HRS resistance is highly dependent on the length of the gap opened. A slight variation of the gap length will cause wide dispersion of resistance.

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were investigated.The optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric acid.The substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire surface.The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically.The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)plane.Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi substrate.The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm.The GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after deposition.The fabricated GaN/Psi film exhibited good electrical characteristics.

High current pulse forming network switched by static induction thyristor

A high-current pulse forming network (PFN) has been developed for applications to artificial solar-wind generation. It is switched by staticinduction thyristor (SIThy) and is capable of generating pulsed current of ~9.7 kA for a time duration of ~1 ms. The SIThy switch module ismade that it can be controlled by an optical signal and it can be operated at elevated electrical potential. The experiments reported in this paperused two switch modules connected in series for maximum operating voltage of 3.5 kV. The experimental results have demonstrated a pulsedhigh-current generator switched by semiconductor devices, as well as the control and operation of SIThy for pulsed power application.

Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi₂Te₃) and Antimony Telluride (Sb₂Te₃) Thermoelectric Devices

We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.

单相脉冲整流器故障在线智能诊断实验设计

针对高速列车电力牵引系统中单相脉冲整流器的功率器件开路故障和传感器故障,设计了基于数据驱动的故障在线智能诊断实验。首先,对单相脉冲整流器系统进行数学建模,分析功率器件开路故障的故障拓扑和传感器故障的故障机理;然后,基于极限学习机算法和非线性自回归结构设计智能诊断模型,并将故障在线智能诊断实验分为离线训练和在线验证2个阶段;最后,基于RT Box半实物仿真器搭建快速原型控制实验平台,对故障模型和诊断模型进行实验验证。实验结果表明,构建的单相脉冲整流器故障在线智能诊断模型可以在1/4个基波周期内检测到故障的发生,并在3/4个基波周期内识别出具体故障类型。

IEC/TC108 2023年秋季工作组会议综述

介绍TC108 HBSDT工作组2023年秋季虚拟会议情况,包括对IEC 62368-1:2023的新技术提案讨论、特别小组讨论、解释组文件讨论及相关决议讨论等。

基于光电容积脉搏波描记法可穿戴血管僵硬度检测技术的临床应用研究

目的建立基于光电容积法的便捷血管僵硬度检测技术,并评估临床诊断效能。方法采用光电容积脉搏波描记法,结合便携式掌式12导联心电信号采集终端,建立动脉脉搏波传导速度的简便检测技术,应用于55例中国人民解放军总医院心血管内科住院患者,与现有动脉硬化检测技术比较,计算灵敏度、特异度、阳性预测值和阴性预测值等指标以及一致性检验。结果可穿戴动脉硬化检测装置对动脉硬化检测的灵敏度、特异度及准确性分别为85.7%、95.2%、91.4%,且具有较好的一致性(Kappa值>0.80)。结论可穿戴动脉硬化检测装置具有便携、操作简单、快速测量的优点,在居家和社区中具有较好的应用前景。

车辆发动机管理系统线缆强电磁脉冲耦合与防护仿真研究

强电磁脉冲可通过外部线缆耦合进入车辆发动机管理系统(EMS)内,造成发动机管理系统设备干扰甚至损伤,电磁防护组件可为车辆EMS防护设计提供支撑。以车辆EMS为研究对象,综合考虑EMS设备及其外部连接线缆,建立EMS设备电磁仿真模型,对不同长度线缆的端口耦合特性及EMS金属壳体表面感应电流进行了仿真研究。基于防护电路仿真,设计了一种应用于车辆EMS设备的电磁防护组件。仿真结果表明,该防护组件能将5 kV的电磁脉冲限制在最高峰值幅度为18 V以内,防护效能达到48 dB,将其加装于EMS线缆接口处可有效提高强电磁环境下的可靠性,对于车辆平台控制系统的电磁防护设计具有一定的参考意义。

1.5 MHz LIPUS无线骨折治疗仪设计

低强度脉冲超声波作为一种骨折辅助治疗手段,与传统治疗方式相比具有很多重优势。目前,市面上缺少多参数可调的低强度超声治疗设备,因此设计一款1.5 MHz低强度脉冲超声多参数可调治疗仪。该治疗仪以STM32单片机为主控芯片,可以输出超声频率为1.5 MHz、脉冲频率为1 kHz,声强、脉冲占空比及治疗时长均可调的低强度脉冲超声波,具有空载保护功能。用户可以通过蓝牙App实时查看和调节仪器的运行状态和输出参数。该App能在蓝牙意外断连后自动重连并正确显示所有信息。实验结果表明,设计的超声波治疗仪输出波形完整,超声输出频率、超声输出功率和脉冲占空比精确稳定,为临床应用奠定了基础。

光电容积脉搏波技术在可穿戴医疗设备中的应用及其未来发展

光电容积脉搏波(Photoplethysmography,PPG)技术,作为一种非侵入式的生理参数监测方法,在心率、血氧饱和度以及其他生理指标的实时监测中已广泛应用。随着可穿戴技术的快速发展,PPG技术在医疗设备领域呈现出广阔的应用前景。本文详细讨论了PPG技术的基本原理、在可穿戴医疗设备中的应用现状及面临的挑战,同时探索了技术的未来发展方向。

基于CDEGS的脉冲功率装置接地优化设计

为降低脉冲功率装置接地点地电位升(grounding potential rise,GPR),使用PSpice进行了Marx型脉冲功率装置初步电路模拟,使用CDEGS进行了接地网频域仿真,结合施工难度及效费比,对接地网进行优化。研究了水平地网密度、地网形状、垂直接地极长度、引下线参数对GPR的影响。结果表明,水平地网密度对工频接地电阻影响较小,对高频散流性能影响较大;实验室地面混凝土钢筋可有效降低地面跨步电压;电流注入点采用放射线接地方法可有效提高地网高频散流性能;高频情况下,近距离铺设的垂直接地极屏蔽效应明显;引下线电感是影响接地点GPR的最大因素。优化后地网参数包括埋深为0.4 m,引下线截面半径为0.25 m,16条放射线,垂直接地极长度为7 m,地网间距为1 m。当激励电流为11 MHz,2.6 kA时,注入点GPR较未优化时降低66.3%,降阻效果明显。

文丘里喷射装置在PVC包装上的创新与应用

分析了文丘里喷射装置在粉末输送中应用的现状,设计了文丘里喷射器在集装箱装载装置中的不同安装方式。对装载装置进行了优化改造,有效消除了集装箱装载不足的现象,提高了装载效率,满足了长途集装箱运输装载方式的要求,实现了包装形式的多样化,降低了装载成本和作业人员的劳动强度。

气吹弧装置仿真与试验研究

并联间隙雷击闪络后能快速疏导电弧保护绝缘子,但无法有效切除后续工频续流。因此,基于“气吹弧”思想研究设计了一种应用于高压输电线路的气吹弧装置。该装置与绝缘子串并联安装,当雷击线路时利用绝缘配合先于绝缘子击穿闪络泄放雷电流入地,并同时利用雷电脉冲信号触发灭弧气丸产生高速气流,能够在继电保护装置最快响应动作前熄灭电弧。通过仿真在理想状态下得出该装置能够在4 ms内将20 kA的工频续流熄灭;通过试验得出该装置能够在2.6 ms内将5.1 kA的续流电弧熄灭。仿真与试验结果基本一致,共同验证了所设计气吹弧装置具有良好的灭弧效果。

Photoconductive devices for terahertz pulsed spectroscopy:a review[Invited]

Photoconductive switches were the key components that allowed the generation and detection of coherent broadband electromagnetic pulses at terahertz frequencies, opening the possibility for performing spectroscopy and,therefore, measuring complex dielectric properties of materials in this band, which was mostly unexplored. In this paper, we present a brief introduction to the operation principles of these devices. Subsequently, we present a review of the current state-of-the-art in this field and discuss the challenges to be faced in future development of these devices.